MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Technical Note UHF BAND GaAs POWER AMPLIFIER Specifications are subject to change without notice. DESCRIPTION The MGF7170AC is a monolithic microwave integrated circuit for use in CDMA base handheld phone. PIN CONFIGURATION (TOP VIEW) Pi FEATURES -Low voltage operation : GND GND Vd=3.0V -High output power : Po=28dBm typ. @f=1.715~1.78GHz -Low distortion : ACP=-46dBc max. @Po=28dBm -High efficiency : Id=520mA typ. @Po=28dBm -Small size : 7.0 x 6.1 x 1.1 mm Single voltage operation (NVG include) Surface mount package 2 Stage Amplifier External matching circuit is required Vd1 GND Ext Po / Vd2 Vg Pi : RF input Po : RF output Vd1 : Drain bias 1 Vd2 : Drain bias 2 Vg : Gate bias(positive bias) GND : Connect to GND Ext : Connect to Capacitor CASE : Connect to GND APPLICATION 1.9GHz band handheld phone QUALITY GRADE GG ES1:different pin configuration Block Diagram of this IC and Application Circuit Example. VDD2 VDD1 Regulator Battery VD1 Pout VD2 Matching circuit VSS Negative voltage generator Matching circuit Pin HPA MGF7170AC *Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. MITSUBISHI ELECTRIC (1/16) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Preliminary information UHF BAND GaAs POWER AMPLIFIER ABSOLUTE MAXIMUM RATINGS (Ta=25 deg.C ) Symbol Parameter Ratings Unit Vd1,Vd2 Drain supply voltage 6 V Vg Gate supply voltage 4 V Pi Input power 15 dBm Tc(op) Operating case temperature -30 ~ +85 deg.C Tstg Storage temperature -30 ~ +100 deg.C *1.Each maximum rating is guaranteed independently. ELECTRICAL CHARACTERISTICS (Ta=25 Symbol f Parameter deg.C ) Test conditions – 450 ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.0V – – 480 – – ACP<-46dBc (1.25MHz off-set.) Vd1=Vd2=3.0V – 520 – ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.3V – – – 150 50 – – – – 28 – dBm – 10 – mA – – -30 dBc – – 3 ACP<-42dBc (1.25MHz off-set.) Vd1=Vd2=3.0V Idle_Id Pout Total drain current Vg=2.6V, Po=28dBm Idle current Vg=2.9V, Po=12dBm Output power Ig Gate current 2sp 2nd harmonics rin input VSWR Vd1=Vd2=3.0V,Vg=2.6V, Pin=7dBm CDMA modulated signal based on IS-95 STD. (1.2288Mbps spreading,OQPSK) – Damage with-standing Note Vd1=Vd2=3.0V, Pin=7dBm, Load VSWR=10, All phase Time=10 sec – Stability Vd1=Vd2=3.0V, Pin=7dBm, Load VSWR=3:1, All phase Note Unit 1715 frequency Idt Limits MIN TYP MAX 450 1780 MHz mA mA – No damage No oscillation Spurious level ≤ -60dBc *CDMA is code division multiple Access. OQPSK is modulation method, off-set quadrature phase shift keying. Electrical characteristics are changed by the external matching circuit. Limits are guaranteed by using MITSUBISHI test fixture. Note : Sampling inspection MITSUBISHI ELECTRIC (2/16) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Preliminary information UHF BAND GaAs POWER AMPLIFIER Pin vs. Pout,Id for CDMA 35 1400 30 1200 25 1000 Idt Pout 20 800 Id2 15 600 10 400 5 0 -12 Id1 200 0 -8 -4 0 4 8 12 Fin=1750MHz Vd1=Vd2=3.0V Vg=2.6V CDMA evaluation 16 Pin (dBm) Pin vs. Pout,Efficiency for CDMA 35 70 30 60 25 50 Pout 20 40 15 30 Efficiency 10 20 5 10 Fin=1750MHz 0 -12 0 -8 -4 0 4 8 Pin (dBm) MITSUBISHI ELECTRIC (3/16) 12 16 Vd1=Vd2=3.0V Vg=2.6V CDMA evaluation Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Preliminary information UHF BAND GaAs POWER AMPLIFIER Pin vs.Pout,Gain for CDMA 35 35 30 30 Pout 25 25 Gain 20 20 15 15 10 10 5 5 0 -12 0 -8 -4 0 4 8 12 Fin=1750MHz Vd1=Vd2=3.0V Vg=2.6V CDMA evaluation 16 Pin (dBm) Pin vs. Pout,ACPR for CDMA 35 15 30 5 Pout 25 -5 20 -15 15 -25 10 ACPR -35 5 0 -12 -45 -8 -4 0 4 8 12 16 Fin=1750MHz Vd1=Vd2=3.0V Vg=2.6V CDMA evaluation Pin (dBm) MITSUBISHI ELECTRIC (4/16) Aug '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Preliminary information UHF BAND GaAs POWER AMPLIFIER Spectral Plot of CDMA ACPR=-30.57dBc Harmonics 2SP=-39.77dBc 3SP=-32.20dBc Fin=1750MHz Vd1=Vd2=3.0V Vg=2.6V Pout=28dBm CDMA evaluation MITSUBISHI ELECTRIC (5/16) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Preliminary information UHF BAND GaAs POWER AMPLIFIER Vd dependence of Pin vs.Pout,Idt 35 1400 30 1200 25 1000 Pout 20 800 15 600 Idt 10 400 Vd=2.6V Vd=3.0V 5 200 0 -12 0 -8 -4 0 4 8 12 Vd=3.4V Fin=1750MHz Vg=2.6V CDMA evaluation 16 Pin (dBm) Vd dependence of Pin vs.Pout,Efficiency 35 70 30 60 Pout 25 50 20 40 Efficiency 15 30 10 20 5 10 0 -12 0 -8 -4 0 4 8 12 Pin (dBm) MITSUBISHI ELECTRIC (6/16) 16 Vd=2.6V Vd=3.0V Vd=3.4V Fin=1750MHz Vg=2.6V CDMA evaluation Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Preliminary information UHF BAND GaAs POWER AMPLIFIER Vd dependence of Pin vs.Pout,Gain 35 35 30 Pout 30 25 25 20 20 Gain 15 15 10 10 Vd=2.6V Vd=3.0V 5 5 0 -12 0 -8 -4 0 4 8 12 16 Pin (dBm) Vd=3.4V Fin=1750MHz Vg=2.6V CDMA evaluation Vd dependence of Pin vs.Pout,ACPR 35 15 30 5 Pout 25 -5 20 -15 15 10 -25 ACPR Vd=3.0V 5 -35 0 -12 -45 -8 -4 0 4 8 12 Pin (dBm) MITSUBISHI ELECTRIC (7/16) Vd=2.6V 16 Vd=3.4V Fin=1750MHz Vg=2.6V CDMA evaluation Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Preliminary information UHF BAND GaAs POWER AMPLIFIER Vd dependence of Fin vs. Gain,Idt 30 600 Idt 25 400 20 200 Gain Vd=2.6V Vd=3.0V Vd=3.4V 15 0 1.710 1.730 1.750 1.770 1.790 Fin=1750MHz Vg=2.6V CDMA evaluation Frequency (GHz) Vd dependence of Fin vs. Id1,Id2 150 600 Id2 100 400 50 200 Id1 Vd=2.6V Vd=3.0V Vd=3.4V 0 1.71 0 1.73 1.75 1.77 1.79 Fin=1750MHz Vg=2.6V CDMA evaluation Frequency (GHz) MITSUBISHI ELECTRIC (8/16) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> Preliminary information MGF7170AC UHF BAND GaAs POWER AMPLIFIER Vd dependence of Fin vs. Gain,Efficiency 35 50 Efficiency 30 40 25 30 Vd=2.6V Vd=3.0V Vd=3.4V Gain 20 20 1.710 1.730 1.750 1.770 1.790 Fin=1750MHz Vg=2.6V CDMA evaluation Frequency (GHz) Vd dependence of Fin vs. Gain,ACPR 25 20 -10 Gain -20 ACPR 15 -30 Vd=2.6V Vd=3.0V Vd=3.4V 10 1.71 -40 1.73 1.75 1.77 1.79 Fin=1750MHz Vg=2.6V CDMA evaluation Frequency (GHz) MITSUBISHI ELECTRIC (9/16) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Preliminary information UHF BAND GaAs POWER AMPLIFIER Equivalent Circuit of Test Board for CDMA(1.715-1.78GHz): ES1 l=5.5 w=1.0 l=11.0 w=1.0 2.0pF l=2.0 w=1.0 Pin 2.5pF Vd2 MGF 7170 AC 1000pF l=13.5 w=0.5 l=2.0 w=2.2 8.0pF Pout 5.0pF l=11.0 w=1.0 Unit:mm SUB. data Er=4.8 H=600 um Metal T=43 um MITSUBISHI ELECTRIC (10/16) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Preliminary information UHF BAND GaAs POWER AMPLIFIER Test Circuit Board for CDMA(1.715-1.78GHz): ES1 2.5pF 2.0pF Pin 18K Ohm 1000pF 5.0pF 1000pF Pout 10Ohm 8.0pF 45K Ohm 1000pF 1000pF Vd1 Vg 10Ohm 1000pF Vd2 40 x 60 mm SUB. data ER=4.8 H=600um Metal T=43um MITSUBISHI ELECTRIC (11/16) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Preliminary information UHF BAND GaAs POWER AMPLIFIER Vg Pin Pout FET1 Matching circuits FET2 VD1 VD2 ZI(TS) ZL(TS) Equivalent circuit of MGF7170AC with our test board : MGF7170AC(Ceramic package) : our test board(Er=4.8, t=0.6mm) MITSUBISHI ELECTRIC (12/16) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Preliminary information UHF BAND GaAs POWER AMPLIFIER Input/Output Impedance (@1.715-1.78GHz) : ES1 ZI(ES1) = 8.7 - j18.3 (Ω) f=1.715GHz 8.6 - j16.5 (Ω) f=1.75GHz 8.5 - j15.0 (Ω) f=1.78GHz ZL(ES1) = 3.8 - j1.1 (Ω) f=1.715GHz 3.5 - j0.4 (Ω) f=1.75GHz 3.3 + j 0.2(Ω) f=1.78GHz X 1.78GHz X 1.75GHz X 1.715GHz Conditions; Vd1=Vd2=3.0V Vg=2.6V Pout=28dBm MITSUBISHI ELECTRIC (13/16) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Preliminary information UHF BAND GaAs POWER AMPLIFIER OUTLINE DRAWING Unit : mm 6.1+/-0.2 Note1 0.3 5.2 1 8 2 3 7 4 6 5 4 - R0.2 0.3 2 - (2.4) 8 - (0.5) 8 - (0.4) Terminal Connection 1 2 RF IN (Pi) GND 3 Vd1 4 Ext 5 Vg 6 RF OUT (Po) & Vd2 7 GND 8 GND Case:GND 4.1 2 - (0.1) 8 - (4.9) Note1 : 1 pin mark Note2 : The values without tolerance are typical. MITSUBISHI ELECTRIC (14/16) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Preliminary information UHF BAND GaAs POWER AMPLIFIER Recommended Mount Pad 2.50 4.10 0.8 4.90 0.8 Unit:mm MITSUBISHI ELECTRIC (15/16) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Preliminary information UHF BAND GaAs POWER AMPLIFIER Recommended Temperature Profile 1) Infrared Reflow and Air Reflow Temperature Profile max. 10sec max. 240 deg.C 1~4 deg.C/sec 1~4 deg.C/sec 150 deg.C Approx. 60sec Time Notes 1) Temperature profile on package surface 2) Reflow process : Up to three times MITSUBISHI ELECTRIC (16/16) Aug. '97