MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7169C Technical Note UHF BAND GaAs POWER AMPLIFIER Specifications are subject to change without notice. DESCRIPTION PIN CONFIGURATION (TOP VIEW) The MGF7169C is a monolithic microwave integrated circuit for use in CDMA base handheld phone. FEATURES Pi Low voltage operation : Vd=3.0V High output power : Po=28dBm typ. @f=1.85~1.91GHz Low distortion : ACP=-46dBc max. @Po=28dBm High efficiency : Id=520mA typ. @Po=28dBm Small size : 7.0 x 6.1 x 1.1 mm Surface mount package 2 Stage Amplifier External matching circuit is required GND Vg1 Vd1 GND MC Vd2 / Po Vg2 : RF input Pi : RF output Po Vd1 : Drain bias 1 Vd2 : Drain bias 2 : Gate bias Vg MC : Note1 GND : Connect to GND CASE : Connect to GND APPLICATION 1.9GHz band handheld phone QUALITY GRADE Note1:Connect to matching circuit GG Block Diagram of this IC and Application Circuit Example. VDD Regulator Battery VD1 Pout VD2 Matching circuit MGF7169C Matching circuit Pin HPA VG1 VG2 Negative voltage generator *Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. MITSUBISHI ELECTRIC (1/20) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> Preliminary information MGF7169C UHF BAND GaAs POWER AMPLIFIER ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol Parameter Ratings Unit Vd1,Vd2 Drain supply voltage 6 V Vg Gate supply voltage -4 V Pi Input power 15 dBm Tc(op) Operating case temperature -30 ~ +85 ˚C Tstg Storage temperature -30 ~ +100 ˚C *1.Each maximum rating is guaranteed independently. ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol f Idt Idle_Id Pout Parameter Total drain current Idle current 2sp 2nd harmonics rin input VSWR — Damage with-standing ACP<-42dBc (1.25MHz off-set.) Vd1=Vd2=3.0V — 450 — ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.0V — 480 — ACP<-46dBc (1.25MHz off-set.) Vd1=Vd2=3.0V — 520 — ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.3V — 450 — Vg1=Vg2=-2.0V, Po=28dBm — 150 — Vg1=Vg2=-2.5V, Po=12dBm — 50 — — 28 — dBm — — -3 mA — — -30 dBc — — 3 — Vd1=Vd2=3.0V,Vg1=Vg2=-2.0V, Pin=7dBm CDMA modulated signal based on IS-95 STD. (1.2288Mbps spreading,OQPSK) Note Vd1=Vd2=3.0V, Pin=7dBm, Load VSWR=10, All phase Time=10 sec Note Vd1=Vd2=3.0V, Pin=7dBm, Load VSWR=3:1, All phase Stability Unit — Output power Gate current MIN Limits TYP MAX 1850 frequency Ig — Test conditions 1910 MHz mA mA No damage No oscillation Spurious level≤-60dBc *CDMA is code division multiple Access. OQPSK is modulation method, off-set quadrature phase shift keying. Electrical characteristics are changed by the external matching circuit. Limits are guaranteed by using MITSUBISHI test fixture. Note : Sampling inspection MITSUBISHI ELECTRIC (2/20) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7169C Preliminary information UHF BAND GaAs POWER AMPLIFIER Pin vs. Pout,Id for CDMA 35 1400 30 1200 25 1000 Pout (dBm) 20 800 Id2 15 600 10 400 5 0 -12 Id (mA) Idt Pout 200 Id1 0 -8 -4 0 4 8 12 16 Fin=1880MHz Vd1=Vd2=3.0V Vg1=Vg2=-2.0V CDMA evaluation Pin (dBm) Pin vs. Pout,Efficiency for CDMA 35 70 30 60 50 Pout 20 40 Efficiency 15 30 10 20 5 10 0 -12 0 -8 -4 0 4 8 12 Pin (dBm) MITSUBISHI ELECTRIC (3/20) 16 Efficiency (%) Pout (dBm) 25 Fin=1880MHz Vd1=Vd2=3.0V Vg1=Vg2=-2.0V CDMA evaluation Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7169C Preliminary information UHF BAND GaAs POWER AMPLIFIER Pin vs.Pout,Gain for CDMA 35 35 30 30 Pout 25 Gain 20 20 15 15 10 10 5 5 0 -12 0 -8 -4 0 4 8 12 GAIN (dB) Pout (dBm) 25 Fin=1880MHz Vd1=Vd2=3.0V Vg1=Vg2=-2.0V CDMA evaluation 16 Pin (dBm) Pin vs. Pout,ACPR for CDMA 35 15 30 5 Pout -5 20 -15 15 -25 10 -35 ACPR 5 -45 0 -12 -55 -8 -4 0 4 8 12 Pin (dBm) MITSUBISHI ELECTRIC (4/20) ACPR (dBc) Pout (dBm) 25 16 Fin=1880MHz Vd1=Vd2=3.0V Vg1=Vg2=-2.0V CDMA evaluation Aug '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> Preliminary information MGF7169C UHF BAND GaAs POWER AMPLIFIER Spectral Plot of CDMA ACPR=-32.31dBc Harmonics 2SP=-53.3dBc 3SP=-31.3dBc Fin=1880MHz Vd1=Vd2=3.0V Vg1=Vg2=-2.0V Pout=28dBm CDMA evaluation MITSUBISHI ELECTRIC (5/20) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> Preliminary information MGF7169C UHF BAND GaAs POWER AMPLIFIER Vd dependence of Pin vs.Pout,Idt 35 1400 30 1200 1000 Pout 20 800 15 600 Id (mA) Pout (dBm) 25 Idt 10 400 5 200 0 -12 0 -8 -4 0 4 8 12 Vd=2.6V Vd=3.0V Vd=3.4V Fin=1880MHz Vg1=Vg2=-2.0V CDMA evaluation 16 Pin (dBm) Vd dependence of Pin vs.Pout,Efficiency 35 70 30 60 50 Pout 20 40 Efficiency 15 30 10 20 5 10 Efficiency (%) Pout (dBm) 25 Vd=2.6V Vd=3.0V Vd=3.4V 0 -12 0 -8 -4 0 4 8 12 16 Fin=1880MHz Vg1=Vg2=-2.0V CDMA evaluation Pin (dBm) MITSUBISHI ELECTRIC (6/20) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> Preliminary information MGF7169C UHF BAND GaAs POWER AMPLIFIER Vd dependence of Pin vs.Pout,Gain 35 35 Pout 30 25 25 20 20 Gain 15 15 10 10 5 5 0 -12 0 -8 -4 0 4 8 12 GAIN (dB) Pout (dBm) 30 Vd=2.6V Vd=3.0V Vd=3.4V Fin=1880MHz Vg1=Vg2=-2.0V CDMA evaluation 16 Pin (dBm) Vd dependence of Pin vs.Pout,ACPR 35 15 30 5 25 -5 20 -15 15 -25 ACPR 10 -35 ACPR (dBc) Pout (dBm) Pout Vd=2.6V Vd=3.0V Vd=3.4V 5 0 -12 -45 -55 -8 -4 0 4 8 12 16 Fin=1880MHz Vg1=Vg2=-2.0V CDMA evaluation Pin (dBm) MITSUBISHI ELECTRIC (7/20) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> Preliminary information MGF7169C UHF BAND GaAs POWER AMPLIFIER Vd dependence of Fin vs. Gain,Idt 30 600 Idt Gain Gain 20 200 Idt (mA) 400 (dB) 25 Vd=2.6V Vd=3.0V Vd=3.4V 15 1.84 Fin=1880MHz Vg1=Vg2=-2.0V CDMA evaluation 0 1.86 1.88 1.90 1.92 Frequency (GHz) Vd dependence of Fin vs. Id1,Id2 150 600 Id2 Id1 50 Id1 200 Id2 (mA) 400 (mA) 100 Vd=2.6V Vd=3.0V Vd=3.4V 0 1.84 0 1.86 1.88 1.90 1.92 Fin=1880MHz Vg1=Vg2=-2.0V CDMA evaluation Frequency (GHz) MITSUBISHI ELECTRIC (8/20) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> Preliminary information MGF7169C UHF BAND GaAs POWER AMPLIFIER Vd dependence of Fin vs. Gain,Efficiency 35 50 40 25 30 Gain (dB) 30 Gain Efficiency (%) Efficiency Vd=2.6V Vd=3.0V Vd=3.4V 20 1.84 Fin=1880MHz Vg1=Vg2=-2.0V CDMA evaluation 20 1.86 1.88 1.90 1.92 Frequency (GHz) Vd dependence of Fin vs. Gain,ACPR -20 Gain Gain (dB) 20 -10 ACPR 15 -30 ACPR (dBc) 25 Vd=2.6V Vd=3.0V Vd=3.4V 10 1.84 -40 1.86 1.88 1.90 1.92 Fin=1880MHz Vg1=Vg2=-2.0V CDMA evaluation Frequency (GHz) MITSUBISHI ELECTRIC (9/20) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> Preliminary information MGF7169C UHF BAND GaAs POWER AMPLIFIER Temp. dependence of Fin vs. Gain,ACPR -10 Gain -20 Gain (dB) 20 15 -30 ACPR+1.25MHz (dBc) 25 ACPR 10 -10 10 30 50 70 f=1.88GHz f=1.91GHz Vd1=Vd2=3.0V Vg1=Vg2=-2.0V Pout=28dBm -40 -30 f=1.85GHz 90 Temperature (Åé) Temp. dependence of Fin vs. Id1,Id2 150 600 Id2 500 Id1 300 50 200 Id1 100 0 0 -30 -10 10 30 50 70 90 Id2 (mA) 400 (mA) 100 f=1.85GHz f=1.88GHz f=1.91GHz Vd1=Vd2=3.0V Vg1=Vg2=-2.0V Pout=28dBm Temperature (Åé) MITSUBISHI ELECTRIC (10/20) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7169C Preliminary information UHF BAND GaAs POWER AMPLIFIER Equivalent Circuit of Test Board for CDMA(1.85-1.91GHz) l=8.0 w=1.0 l=8.5 w=1.0 1.5pF l=2.0 w=1.0 MGF 7169C Pin 2.5pF Vd2 1000pF l=23.5 w=0.5 l=2.0 w=2.2 4.5pF Pout 4.0pF l=11.0 w=1.0 Unit:mm SUB. data Er=4.8 H=600 mm Metal T=43 mm MITSUBISHI ELECTRIC (11/20) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7169C Preliminary information UHF BAND GaAs POWER AMPLIFIER Test Circuit Board for CDMA(1.85-1.91GHz) 2.5pF 1.5pF Pin 1000pF 4.0pF 1000pF Pout 4.5pF 10Ohm 3K Ohm (This will be included in PKG for Mass Production) 1000pF 1000pF Vg1 Vd1 Vg2 1000pF Vd2 40 x 60 mm SUB. data ER=4.8 H=600µm Metal T=43µm MITSUBISHI ELECTRIC (12/20) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7169C Preliminary information UHF BAND GaAs POWER AMPLIFIER VG1 VG2 Pin Pout FET1 Matching circuits FET2 VD1 VD2 ZL(ES) ZI(ES) Equivalent circuit of MGF7169C with our test board : MGF7169C(Ceramic package) : our test board(Er=4.8, t=0.6mm) MITSUBISHI ELECTRIC (13/20) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7169C Preliminary information UHF BAND GaAs POWER AMPLIFIER Input/Output Impedance (@1.85-1.91GHz) ZI(ES) = 6.8 - j22.7 (Ω) f=1.85GHz 6.7 - j21.3 (Ω) f=1.88GHz 6.6 - j19.8 (Ω) f=1.91GHz ZL(ES) = 4.3 - j3.2 (Ω) f=1.85GHz 4.2 - j2.7 (Ω) f=1.88GHz 4.0 - j2.3 (Ω) f=1.91GHz ZL(ES) on SMITH CHART 1.91GHz X 1.88GHz X X 1.85GHz Conditions; Vd1=Vd2=3.0V Vg1=Vg2=-2.0V Pout=28dBm MITSUBISHI ELECTRIC (14/20) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7169C Preliminary information UHF BAND GaAs POWER AMPLIFIER OUTLINE DRAWING Unit : mm 6.1+/-0.2 Note1 0.3 5.2 1 8 3 6.2 7.0+/-0.2 2 7 4 6 5 1.1+/-0.2 4 - R0.2 0.3 2 - (2.4) 8 - (0.5) 8 - (0.4) (1.2) P1.27 x 4 = 5.08+/-0.1 Terminal Connection 2 - 2.06 2 - (0.1) 8 - (4.9) 2 RF IN (Pi) Vg1 3 4.28 6 - 0.8+/-0.1 2 - (0.1) 4.1 1 Vd1 4 MC 5 Vg2 6 RF OUT (Po) & Vd2 7 GND 8 GND Case:GND Note1 : 1 pin mark Note2 : The values without tolerance are typical. MITSUBISHI ELECTRIC (15/20) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7169C Preliminary information UHF BAND GaAs POWER AMPLIFIER Recommended Mount Pad 0.45 0.9 2.16 1.4 2.14 1.2 1.27 x 4=5.08 7.40 1.0 2.50 4.10 0.8 4.90 0.8 Unit:mm MITSUBISHI ELECTRIC (16/20) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7169C Preliminary information UHF BAND GaAs POWER AMPLIFIER Recommended Temperature Profile 1) Infrared Reflow and Air Reflow Temperature Profile Temperature max. 10sec max. 240 deg.C 1~4 deg.C/sec 1~4 deg.C/sec 150 deg.C Approx. 60sec Time Notes 1) Temperature profile on package surface 2) Reflow process : Up to three times MITSUBISHI ELECTRIC (17/20) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7169C Preliminary information UHF BAND GaAs POWER AMPLIFIER Lumped Elements Equivalent Circuit of Test Board for CDMA(1.85-1.91GHz) Vd2 Chip Inductor 10nH A 1.5pF l=2.0 w=1.0 l=2.0 w=2.2 1000pF F D MGF 7169C Pin 1.0pF Pout 15pF 4.0pF B C Unit:mm SUB. data Er=4.8 H=600 um Metal T=43 um MITSUBISHI ELECTRIC (18/20) Oct. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7169C Preliminary information UHF BAND GaAs POWER AMPLIFIER Lumped Elements Test Circuit Board for CDMA(1.85-1.91GHz) 5mm A B 1.5pF 1.0pF Pin C 1000pF 4.0pF 1000pF 15pF D Pout 10Ohm 10nH F 1000pF 1000pF Vg1 Vd1 1000pF Vg2 Vd2 3K Ohm (This will be included in PKG for Mass Production) 40 x 60 mm Line Chip Capacitor Chip Inductor This device needs 4 chip capacitors,1 chip inductor and 2 transmission lines to make input and output matching circuit. MITSUBISHI ELECTRIC (19/20) SUB. data ER=4.8 H=600um Metal T=43um Oct. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7169C Preliminary information UHF BAND GaAs POWER AMPLIFIER VG1 VG2 Pout Pin FET1 Matching circuits FET2 VD1 VD2 ZL(ES) ZI(ES) Lumped Elements Equivalent circuit of MGF7169C with our test board : MGF7169C(Ceramic package) : our test board(Er=4.8, t=0.6mm) MITSUBISHI ELECTRIC (20/20) Oct. '97