FLL21E004ME High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=36dBm(typ.) at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E004ME is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is targeted for high voltage, low current operation in digitally modulated amplification. This product is ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers while offering high gain, long term reliability and ease of use. ABSOLUTE MAXIMUM RATINGS Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Condition Rating VDS VGS Tc=25oC Pt Tstg Tch 32 -3 18.75 -65 to +175 200 Unit V V W oC oC RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25oC) Item Symbol DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature VDS IGF IGR Tch Condition Limit RG=100Ω RG=100Ω <28 <6.1 >-1.0 155 Unit V mA mA oC ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition min. Pinch-Off Voltage Vp VDS=5V IDS=0.6mA -0.1 Gate-Source Breakdown Voltage VGSO IGS=-6uA -5 Output Power at 1dB G.C.P. P1dB VDS=28V f=2.17GHz Power Gain at 1dB G.C.P. G1dB IDS(DC)=50mA Drain Efficiency ηd Thermal Resistance Rth Channel to Case Limit Typ. Max. Unit -0.2 -0.5 V - - V 35.0 36.0 - dBm 13.0 14.0 - dB - 40 - % - 7.0 8.0 oC G.C.P.:Gain Compression Point Edition 1.4 Mar. 2004 1 FLL21E004ME High Voltage - High Power GaAs FET 90 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 80 70 60 50 40 30 20 Drain Efficiency [%] Output Power [dBm] Output Power & Drain Efficiency vs. Input Power @VDS=28V IDS=50mA f=2.17GHz 10 0 6 8 10 12 14 16 18 20 22 24 26 Input Pow er [dBm ] Drain Efficiency -25 35 -30 30 -35 25 -40 20 -45 15 -50 10 -55 -60 35 -30 30 -35 25 -40 20 -45 15 -50 10 5 -55 5 0 -60 0 ACLR [dBc] 16 18 20 22 24 26 28 30 32 16 18 20 22 24 26 28 30 32 IM3 Single-Carrier ACLR & Drain Efficiency vs. Output Power @VDS=28V IDS=50mA fo=2.1325GHz W-CDMA 3GPP BS-1 64ch Modulation -25 Drain Efficiency [%] IMD [dBc] Two-Carrier IMD(ACLR) & Drain Efficiency vs. Output Power @VDS=28V IDS=50mA fo=2.3125GHz f1=2.1475GHz W-CDMA 3-GPP BS-1 64ch Modulation Drain Efficiency [%] Pout Output Pow er[dBm ] Output Pow er [dBm ] IM5 Drain Efficiency +/-5MHz 2 +/-10MHz Drain Efficiency FLL21E004ME High Voltage - High Power GaAs FET S-Parameters @VDS=28V IDS=50mA f=0.5 to 5.0 GHz 5.0 +10j 4.0 0 3.0 2.0 5.0 1.0 -10j 4.0 0.5G H z 3.0 2.0 -25j 6 ±180° 10 Scale for |S21| 0.5 -90° Scale for |S 12| +25j !freq(GHz)S11(mag) S11(ang) S21(mag) S21(ang) S12(mag) S12(ang) S22(mag) S22(ang) 0.1 0.973 -67.8 24.531 139.8 0.007 45.3 0.630 -19.0 0.2 0.950 -107.7 17.618 114.5 0.009 30.2 0.580 -30.8 +50j 0.3 0.938 -128.8 13.004 98.7 0.010 19.1 0.566 -40.1 +100j 0.4 0.932 -141.4 10.107 87.6 0.010 13.3 0.571 -48.7 0.5 0.928 -149.7 8.139 78.6 0.009 10.0 0.584 -57.3 1 0.930 -167.2 3.734 47.9 0.005 14.2 0.686 -90.9 1.1 0.932 -168.9 3.329 43.1 0.005 21.6 0.705 -95.9 +250j 1.2 0.934 -170.3 2.981 38.9 0.004 37.1 0.722 -100.5 1.3 0.937 -172.4 2.675 34.5 0.005 43.2 0.741 -105.2 1.4 0.936 -173.4 2.432 30.3 0.006 56.3 0.754 -109.2 1.5 0.936 -174.5 2.200 26.6 0.006 71.9 0.772 -112.8 ∞ 1.6 0.937 -175.4 2.010 23.4 0.006 83.7 0.782 -115.7 1.7 0.937 -176.5 1.867 19.4 0.008 81.8 0.796 -118.8 100Ω 1.8 0.936 -177.2 1.713 16.5 0.009 89.3 0.813 -121.6 0.5G H z -250j 50Ω 1.9 0.942 -178.0 1.598 13.4 0.009 93.0 0.819 -123.8 1.0 1.95 0.935 -178.4 1.545 11.9 0.011 90.1 0.826 -125.6 25Ω 2 0.940 -178.9 1.496 10.3 0.011 90.8 0.829 -127.0 10Ω 2.05 0.937 -179.2 1.436 8.5 0.013 91.6 0.834 -127.9 -100j 2.1 0.943 -179.9 1.388 7.5 0.012 89.9 0.838 -128.7 S 11 -50j 2.11 0.941 179.9 1.377 6.8 0.013 94.5 0.842 -129.0 S 22 2.12 0.943 179.7 1.371 7.0 0.012 93.4 0.845 -129.4 2.13 0.938 179.9 1.363 6.8 0.012 92.5 0.835 -129.4 2.14 0.940 179.9 1.356 6.2 0.014 97.1 0.838 -129.5 +90° 2.15 0.938 179.9 1.343 6.4 0.012 90.2 0.842 -129.9 2.16 0.945 179.9 1.336 6.1 0.013 92.3 0.844 -130.1 0.5G H z 2.17 0.946 179.5 1.338 5.4 0.015 93.0 0.846 -130.1 2.18 0.937 179.4 1.320 5.1 0.014 98.4 0.847 -130.3 2.19 0.938 179.5 1.310 4.8 0.014 90.1 0.843 -130.8 2.2 0.937 179.3 1.303 4.9 0.014 95.6 0.849 -131.0 2.25 0.937 179.0 1.271 3.4 0.015 92.6 0.857 -131.9 1.0 2.3 0.942 178.5 1.232 1.7 0.015 95.0 0.857 -132.7 2.35 0.944 178.2 1.194 0.3 0.016 96.1 0.859 -133.6 2.0 0° 3 2.4 0.942 177.6 1.164 -1.1 0.018 94.3 0.861 -134.4 4 5 2.5 0.942 177.2 1.103 -3.1 0.019 97.2 0.878 -136.3 2.6 0.941 176.5 1.054 -6.0 0.019 98.5 0.878 -138.1 2.7 0.943 175.6 1.005 -8.0 0.021 93.2 0.883 -139.4 0.3 2.8 0.943 174.7 0.963 -10.3 0.023 92.0 0.895 -140.6 2.9 0.944 174.0 0.923 -13.5 0.025 92.1 0.897 -142.4 3 0.945 173.1 0.892 -15.1 0.027 91.4 0.897 -143.1 S 12 S 21 3 FLL21E004ME High Voltage - High Power GaAs FET BOARD LAYOUT Φ <INPUT SIDE> µ Ω <OUTPUT SIDE> µ Ω εr=10.45 t=1.2mm 4 FLL21E004ME High Voltage - High Power GaAs FET ME Package Outline Metal-Ceramic Hermetic Package PIN ASSIGMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN 4 : SOURCE(Flange) Unit : mm 5 FLL21E004ME High Voltage - High Power GaAs FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong kong TEL: +852-2377-0227 FAX: +852-2377-3921 © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan TEL +81-45-853-8156 FAX +81-45-853-8170 6