FUJITSU MB3807A

FUJITSU SEMICONDUCTOR
DATA SHEET
ASSP
DS04-27602-1E
Power Supply
BIPOLAR
Power Management Switching IC
(with flash memory power switching function)
MB3807A
■ DESCRIPTION
When data is written to or read from flash memory, it requires that the voltage at its power supply (VPP) be switched
(to 12 V for writing and to 3.3 or 5.0 V for reading).
The MB3807A is a power management switching IC, designed to be compatible with the PCMCIA digital controller,
to switch the VPP voltage of flash memory.
When the switch is turned on, optimum voltage is applied to the gate of the internal charge pump N-ch MOS
switch, providing a constant amount of ON resistance. The ON resistance is also kept to be low to reduce voltage
drop at the VPP pin that is caused by large current flowing when data is written.
In addition, the OFF time is much shorter than the ON time to prevent short-circuiting between the reading and
writing power supplies when the device switches the VPP voltage for reading or writing data (break-before-make
operation).
■ FEATURES
• Switching at low ON resistance
For writing data: SWIN1 = 12 V, Ron = 0.3 Ω
For reading data: SWIN2 = 5 V, Ron = 6.0 Ω
SWIN2 = 3.3 V, Ron = 8.5 Ω
• Wide range of supply voltages: VCC = 2.7 to 5.5 V
• Prevention of reverse current from the load at switch-off time
• ON time controllable with external pin
• Break-before-make operation
■ PACKAGE
16 pin Plastic SOP
(FPT-16P-M04)
MB3807A
■ PIN ASSIGNMENT
(TOP VIEW)
EN1A
1
16
VCC
EN0A
2
15
DLYA
SWIN2A
3
14
SWOUTA
SWIN1A
4
13
SWOUTA
SWIN1B
5
12
SWOUTB
SWIN2B
6
11
SWOUTB
EN0B
7
10
DLYB
GND
8
9
EN1B
(FPT-16P-M04)
■ LOGICAL OPERATION TABLE
2
EN1
EN0
SW1
SW2
0
0
OFF
OFF
0
1
OFF
ON
1
0
ON
OFF
1
1
OFF
OFF
MB3807A
■ PIN DESCRIPTION
Pin No.
Pin name
1
EN1A
9
EN1B
2
EN0A
7
EN0B
4
SWIN1A
5
SWIN1B
3
SWIN2A
6
SWIN2B
13, 14
SWOUTA
11, 12
SWOUTB
15
DLYA
10
DLYB
16
VCC
8
GND
Function
These pins turn the corresponding switches on and off depending on the PCMCIA
compatible signals, as shown in “LOGICAL OPERATION TABLE.”
These pins connect the 12-V power supply for writing data to flash memory. When
the SW1 is turned on, the voltage at the SWIN1 pin is output to the SWOUT pin.
These pins also serve as power supply pins for the charge pump on the SW1 side.
For switching, the pins require a voltage higher than VCC.
These pins connect the 3.3/5.0-V power supply for reading data from flash memory.
When the SW2 is on, the voltage at the SWIN2 pin is output to the SWOUT pin.
These pins also serve as power supply pins for the charge pump on the SW2 side.
For switching, the pins require a voltage higher than VCC.
These pins are output pins of the switch. A pair of two pins are used commonly as
either SWOUTA or SWOUTB pins.
These pins are connected to the VPP pin of the flash memory.
These pins control the switch ON time.
The ON time is controllable using an external capacitor.
Leave these pins open when not in use. Note that a voltage of about 25 V is generated when the pins are open. Since high impedance is required, be careful when
mounting the device not to generate current leakage.
Power supply pin
Ground pin
3
MB3807A
■ BLOCK DIAGRAM
DLY
Switch-off circuit
SWIN1
Power supply
for writing
Switch-on circuit
(Charge pump)
EN1
(SW1)
SWIN2
Power supply
for reading
Switch-on circuit
(Charge pump)
EN0
(SW2)
Switch-off circuit
SWOUT
VPP
Flash
memory
Note: The MB3807A contains a pair of above circuit blocks.
■ BLOCK DESCRIPTION
The SWIN1 and SWIN2 pins are connected to the 12-V and 3.5/5.0-V power supplies, respectively. The SWOUT
pin is connected to the VPP power supply pin of the flash memory.
When conditions, EN1 = “H” and EN0 = “L” are established in an attempt to write data to flash memory, the switchon circuit (charge pump) on the SW1 side is activated.
The charge pump applies optimum voltage to the SW1 gate to turn the switch on, causing the SWOUT pin to supply
12-V power from the SWIN1 pin to the VPP pin of the flash memory. On the SW2 side, the switch-off circuit discharges
the SW2 gate voltage to the GND to turn the switch off.
Reading data from flash memory assume the conditions EN1 = “L” and EN0 = “H.” When the conditions are
established, the switch-on circuit (charge pump) on the SW2 side and the switch-off circuit on the SW1 side are
activated to cause the SWOUT pin to supply 3.3/5.0-V power from the SWIN2 pin to the VPP pin of the flash memory.
Since the switch-on circuits are powered from the SWIN1 and SWIN2 pins, 80 to 350 µA current flows from the
SWIN1 and SWIN2 pins to the GND when the switch is turned on.
The back gate of the N-channel MOS is connected to the GND. This prevents reverse current from flowing at switchoff time, regardless of the high potential of SWIN1 or SWIN2 pin and the SWOUT pin.
The DLY pin is an external capacitance connector to delay turning the switch on. Controlling the switch ON time
minimizes surge current flowing to the capacitor connected to the load when the switch is turned on.
4
MB3807A
■ ABSOLUTE MAXIMUM RATINGS (See WARNING)
Parameter
Input voltage
Switching voltage
Switching current
Symbol
Conditions
Ratings
Min.
Max.
Unit
VIN
—
–0.3
7
V
VSWIN1
—
–0.3
18
V
VSWIN2
—
–0.3
18
V
—
1.5
A
—
0.3
A
—
290
mW
–55
+125
°C
ISWIN1
ISWIN2
Permissible loss
PD
Storage temperature
Tstg
Switch-on peak
Ta ≤ +75°C
—
WARNING: Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this
data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Conditions
Values
Min.
Max.
Unit
Supply voltage
VCC
—
2.7
5.5
V
High-level input voltage
VIH
—
VCC × 0.8
VCC
V
Low-level input voltage
VIL
—
0
VCC × 0.2
V
—
VCC
15.0
V
0
15.0
V
VCC
6.0
V
Switch OFF state
0
6.0
V
ISWIN1
Switch ON state
—
500
mA
ISWIN2
Switch ON state
—
100
mA
VSWIN1
Switching voltage
VSWIN2
Switching current
Switch OFF state
—
DLY pin capacitance for
connection
C DLY
—
—
10
nF
DLY pin leakage current
I DLY
—
–0.1
0.1
µA
Operating temperature
Top
—
–40
+75
°C
5
MB3807A
■ ELECTRIC CHARACTERISTICS
1.
DC Characteristics
(Ta = –40°C to +75°C)
Parameter
Symbol
Conditions
Values
Min.
Typical*1
Max.
Switch resistance
(SW1)
RON1
VSWIN1 = 12 V, ISWIN1 = 500 mA
VCC = 3 V, 5 V, Ta = +25°C
—
300
450
mΩ
Switch resistance
(SW2)
RON2
VSWIN2 = 3 to 5 V, ISWIN2 = 100 mA
VCC = 3 V, 5 V, Ta = +25°C
—
6
10
Ω
RONT1
VSWIN1 = 12 V, ISWIN1 = 500 mA
VCC = 3 V, 5 V
—
—
610
mΩ
RONT2
VSWIN2 = 3 to 5 V, ISWIN2 = 100 mA
VCC = 3 V, 5 V
—
—
14
Ω
High-level input current
IIH
VCC = 5.5 V, VIH = 5.5 V
—
0
10
µA
Low-level input current
IIL
VCC = 5.5 V, VIL = 0 V
–10
0
—
µA
IL1
EN0 = 0 V, EN1 = 0 V
or EN0 = 3 V, EN1 = 3 V
VSWIN1 = 15 V, VCC = 3 V
—
0
10
µA
IL2
EN0 = 0 V, EN1 = 0 V
or EN0 = 3 V, EN1 = 3 V
VSWIN2 = 6 V, VCC = 3 V
—
0
10
µA
ISWON1
EN0 = 0 V, EN1 = 5 V
VCC = 5 V, VSWIN1 = 12 V
175
350
700
µA
ISWON2
EN0 = 5 V, EN1 = 0 V
VCC = 5 V, VSWIN2 = 5 V
30
80
200
µA
DLY output voltage
VDLY
VCC = 5 V, VSWIN2 = 12 V
—
24
35
V
Supply current
ICC
EN0 = 5 V, EN1 = 0 V
or EN0 = 5 V, EN1 = 0 V
VCC = 5 V
50
100
300
µA
Switch resistance
Switch-off leakage
current
Charge pump driving
current*2
*1: Typical values assume VCC = TYP, Ta = +25°C.
*2: The charge pump driving current flows from SWIN to GND when the switch is turned on.
6
Unit
MB3807A
2.
AC Characteristics
Parameter
ON time
OFF time
ON/OFF time
difference
Symbol
Conditions
Min.
(Ta = –40°C to +75°C)
Values
Unit
Typical
Max.
tON1
VSWIN1 = 12 V, R = 24 Ω, VCC = 5 V
30
60
140
µs
tON2
VSWIN1 = 12 V, R = 24 Ω, VCC = 3 V
30
60
140
µs
tON3
VSWIN2 = 5 V, R = 50 Ω, VCC = 5 V
40
90
200
µs
tON4
VSWIN2 = 3 V, R = 30 Ω, VCC = 3 V
200
400
1200
µs
tOFF1
VSWIN1 = 12 V, R = 24 Ω, VCC = 5 V
10
30
60
µs
tOFF2
VSWIN1 = 12 V, R = 24 Ω, VCC = 3 V
10
40
70
µs
tOFF3
VSWIN2 = 5 V, R = 50 Ω, VCC = 5 V
1
7
20
µs
tOFF4
VSWIN2 = 3 V, R = 30 Ω, VCC = 3 V
1
7
20
µs
tHYS1
—
29
53
130
µs
tHYS2
—
29
53
130
µs
tHYS3
—
30
60
190
µs
tHYS4
—
190
360
12000
µs
Note: ON/OFF time difference: tHYS1 = tON1 – tOFF3
tHYS2 = tON2 – tOFF4
tHYS3 = tON3 – tOFF1
tHYS4 = tON4 – tOFF2
7
MB3807A
■ AC SPECIFICATION TEST DIAGRAM
• Measurement Conditions
DLY
(OPEN)
VCC
SWIN1
EN0
SWIN2
EN1
SWOUT
12 V
3 V/5 V
GND
Measurement point
R
R: Load resistance
■ TIMING DIAGRAM
• ON-time and OFF-time Waveforms
tr
tr
90 %
50 %
50 %
EN1
VCC
90 %
10 %
10 %
0V
tr
tr
90 %
50 %
EN0
VCC
90 %
50 %
10 %
10 %
tOFF1, 2
tON1, 2
0V
.= VSWIN1
.
90 %
SWOUT (SW1)
10 %
0V
tOFF1, 2
tON3, 4
.= VSWIN2
.
90 %
SWOUT (SW2)
10 %
0V
Note: The EN0/EN1 rise and fall times (10 %, 90 %) are each 1 ms or less.
(Continued)
8
MB3807A
(Continued)
tf
tr
90 %
EN1
VCC
90 %
50 %
50 %
10 %
10 %
0V
tf
tr
90 %
90 %
50 %
EN0
VCC
50 %
10 %
10 %
0V
tOFF1, 2
tON1, 2
.= VSWIN1
.
90 %
SWOUT (SW1)
10 %
0V
tOFF1, 2
tON3, 4
.= VSWIN2
.
90 %
SWOUT (SW2)
10 %
0V
Note: The EN0/EN1 rise and fall times (10 %, 90 %) are each 1 ms or less.
9
MB3807A
■ APPLICATION
3.3 V
A: VCC
5.0 V
MB3802
PCMCIA
card slot A
A: VPP
12.0 V
PCMCIA
controller
B: VPP
MB3807A
PCMCIA
card slot B
B: VCC
MB3802
10
MB3807A
■ TYPICAL CHARACTERISTIC CURVES
ON resistance (SW2)
ON resistance (SW1)
10
VCC = 3.0 V
VCC = 5.0 V
ISW = 500 mA
VCC = 3.0 V
VCC = 5.0 V
ISW = 100 mA
9
Switch ON resistance (Ω)
Switch ON resistance (mΩ)
400
350
300
250
8
7
6
5
4
200
9
10
11
12
13
14
3
15
4
Switching voitage (SWIN1) (V)
ON resistance (temperature dependence characteristic: SWIN2)
ON resistance (temperature dependence characteristic: SWIN1)
7.5
VCC = 3.0 V
VCC = 5.0 V
VSWIN1 = 12 V
350
Ta = +75°C
300
Ta = +25°C
250
VCC = 3.0 V
VCC = 5.0 V
VSWIN2 = 12 V
7.0
Switch ON resistance (Ω)
400
Switch ON resistance (mΩ)
6
Switching voitage (SWIN2) (V)
450
Ta = –25°C
200
6.5
Ta = +75°C
6.0
Ta = +25°C
5.5
Ta = –25°C
5.0
4.5
Ta = –40°C
150
Ta = –40°C
4.0
110
200
300
400
500
20
40
Isw (mA)
ON resistance (temperature dependence characteristic: SWIN2 )
11.5
VCC = 3.0 V
11.0
VCC = 5.0 V
VSWIN2 = 3 V
10.5
Ta = +75°C
10.0
9.5
Ta = +25°C
9.0
8.5
60
100
80
Isw (mA)
Ta = –25°C
8.0
Charge pump output voltage
34
VCC = 5.0 V
32
DLY pin output voltage (V)
Switch ON resistance (Ω)
5
30
28
26
24
22
20
Ta = –40°C
7.5
18
20
40
60
Isw (mA)
80
100
9
10
11
12
13
14
Switching voltage (SWIN1)(V)
15
(Continued)
11
MB3807A
(Continued)
Charge pump driving current
Charge pump driving current
150
VCC = 5.0 V
Vswout = OPEN
Charge pump driving current (µA)
Charge pump driving current (µA)
600
500
Ta = –40°C
Ta = –25°C
400
Ta = +25°C
300
Ta = +75°C
200
VCC = 3.0 V
VCC = 5.0 V
ISW = 100m A
100
Ta = –40°C
Ta = –25°C
Ta = +25°C
50
Ta = +75°C
0
9
10
11
12
13
14
15
3
Switching voltage (SWIN1) (V)
Switch ON time (SW1)
5
6
Switch OFF time (SW1)
80
100
SWIN1 = 12 V
ISW = 0.5 A
SWIN1 = 12 V
ISW = 0.5 A
90
80
OFF time (µs)
70
ON time (µs)
4
Switching voltage (SWIN2) (V)
60
50
70
60
50
40
30
20
10
40
3
4
5
3
6
Supply voltage (Vcc) (V)
4
5
6
Supply voltage (Vcc) (V)
Switch OFF time (SW2)
Switch ON time (SW2)
600
20
ISW = 100m A
ISW = 100 mA
500
SWIN2 = 3.0 V
300
200
SWIN2 = 5.0 V
OFF time (µs)
ON time (µs)
15
400
10
SWIN2 = 3.0 V
5
100
SWIN2 = 5.0 V
0
0
3
4
5
Supply voltage (Vcc) (V)
12
6
3
4
5
Supply voltage (Vcc) (V)
6
MB3807A
■ ORDERING INFORMATION
Part number
MB3807APF
Package
Remarks
16 pin Plastic SOP
(FPT-16P-M04)
13
MB3807A
■ PACKAGE DIMENSION
16 pin Plastic SOP
(FPT-16P-M04)
+0.25
+.010
10.15 –0.20 .400 –.008
2.10(.083)MAX
(MOUNTING HEIGHT)
0(0)MIN
(STAND OFF)
INDEX
1.27(.050)TYP
3.90±0.30
(.154±.012)
0.45±0.10
(.018±.004)
+0.40
5.40 –0.20
+.016
.213 –.008
6.40±0.40
(.252±.016)
+0.05
Ø0.13(.005)
M
0.15 –0.02
+.002
.006 –.001
0.50±0.20
(.020±.008)
Details of "A" part
0.20(.008)
0.10(.004)
8.89(.350)REF
"A"
0.50(.020)
0.18(.007)MAX
0.68(.027)MAX
C
14
1994 FUJITSU LIMITED F16012S-4C-4
Dimensions in mm (inches)
MB3807A
FUJITSU LIMITED
For further information please contact:
Japan
FUJITSU LIMITED
Corporate Global Business Support Division
Electronic Devices
KAWASAKI PLANT, 4-1-1, Kamikodanaka
Nakahara-ku, Kawasaki-shi
Kanagawa 211-8588, Japan
Tel: (044) 754-3763
Fax: (044) 754-3329
http://www.fujitsu.co.jp/
North and South America
FUJITSU MICROELECTRONICS, INC.
Semiconductor Division
3545 North First Street
San Jose, CA 95134-1804, USA
Tel: (408) 922-9000
Fax: (408) 922-9179
Customer Response Center
Mon. - Fri.: 7 am - 5 pm (PST)
Tel: (800) 866-8608
Fax: (408) 922-9179
http://www.fujitsumicro.com/
Europe
FUJITSU MIKROELEKTRONIK GmbH
Am Siebenstein 6-10
D-63303 Dreieich-Buchschlag
Germany
Tel: (06103) 690-0
Fax: (06103) 690-122
http://www.fujitsu-ede.com/
Asia Pacific
FUJITSU MICROELECTRONICS ASIA PTE LTD
#05-08, 151 Lorong Chuan
New Tech Park
Singapore 556741
Tel: (65) 281-0770
Fax: (65) 281-0220
http://www.fmap.com.sg/
F9803
 FUJITSU LIMITED Printed in Japan
16
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The contents of this document are subject to change without
notice. Customers are advised to consult with FUJITSU sales
representatives before ordering.
The information and circuit diagrams in this document presented
as examples of semiconductor device applications, and are not
intended to be incorporated in devices for actual use. Also,
FUJITSU is unable to assume responsibility for infringement of
any patent rights or other rights of third parties arising from the
use of this information or circuit diagrams.
FUJITSU semiconductor devices are intended for use in
standard applications (computers, office automation and other
office equipment, industrial, communications, and measurement
equipment, personal or household devices, etc.).
CAUTION:
Customers considering the use of our products in special
applications where failure or abnormal operation may directly
affect human lives or cause physical injury or property damage,
or where extremely high levels of reliability are demanded (such
as aerospace systems, atomic energy controls, sea floor
repeaters, vehicle operating controls, medical devices for life
support, etc.) are requested to consult with FUJITSU sales
representatives before such use. The company will not be
responsible for damages arising from such use without prior
approval.
Any semiconductor devices have inherently a certain rate of
failure. You must protect against injury, damage or loss from
such failures by incorporating safety design measures into your
facility and equipment such as redundancy, fire protection, and
prevention of over-current levels and other abnormal operating
conditions.
If any products described in this document represent goods or
technologies subject to certain restrictions on export under the
Foreign Exchange and Foreign Trade Control Law of Japan, the
prior authorization by Japanese government should be required
for export of those products from Japan.