2SB1407(L)/(S) Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SB1407(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –35 V Collector to emitter voltage VCEO –35 V Emitter to base voltage VEBO –5 V Collector current IC –2.5 A Collector peak current I C(peak) –3 A 18 W 1 Collector power dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –35 — — V I C = –1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage –35 — — V I C = –10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — V I E = –1 mA, IC = 0 Collector cutoff current I CBO — — –20 µA VCB = –35 V, IE = 0 60 — 320 VCE = –2 V, IC = –0.5 A*2 hFE2 20 — — VCE = –2 V, IC = –1.5 A*2 Base to emitter voltage VBE — — –1.5 V VCE = –2 V, IC = –1.5 A*2 Collector to emitter saturation voltage VCE(sat) — — –1.0 V I C = –2 A, IB = –0.2 A*2 DC current transfer ratio hFE1* 1 Notes: 1. The 2SB1407(L)/(S) is grouped by h FE1 as follows. B C D 60 to 120 100 to 200 160 to 320 2. Pulse test. 2 2SB1407(L)/(S) Maximum Collector Dissipation Curve Area of Safe Operation Collector Current IC (A) –10 20 10 0 50 100 Case Temperature TC (°C) iC (peak) –3 –1.0 –0.3 Ta = 25°C 1 Shot Pulse –3 –10 –30 –100 Collector to emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics –16 –14 –12 –1.6 –10 –1.2 –8 –6 –0.8 –4 –2 mA –0.4 IB = 0 0 Ta = 25°C –1 –2 –3 –4 –5 Collector to emitter Voltage VCE (V) 1,000 DC current transfer ratio hFE Collector Current IC (A) –2.0 10 ms IC (max) –0.1 –1 150 PW = s 1m n tio era Op °C) DC = 25 (T C Collector power dissipation Pc (W) 30 300 100 30 10 –0.03 VCE = –2 V Ta = 25°C –0.1 –0.3 –1.0 Collector current IC (A) –3.0 3 2SB1407(L)/(S) Typical Transfer Characteristics Saturation Voltage vs. Collector Current –2.0 4 Collector current IC (A) Collector to emitter saturation voltage VCE (sat) (V) –1.0 –0.3 –0.1 –0.03 –0.01 –0.03 –1.2 –0.8 –0.4 VCE = –2 V Ta = 25°C lC = 10 lB Ta = 25°C –0.1 –0.3 –1.0 Collector current IC (A) –1.6 –3.0 0 –0.5 –0.4 –0.8 –1.2 –1.6 –2.0 Base to emitter voltage VBE (V) 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 1.7 ± 0.5 Unit: mm 2.29 ± 0.5 16.2 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 3.1 ± 0.5 1.2 ± 0.3 2.29 ± 0.5 0.55 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) DPAK (L)-(1) — Conforms 0.42 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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