HITACHI 2SB1407L

2SB1407(L)/(S)
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary Pair with 2SD2121(L)/(S)
Outline
DPAK
4
4
1
2
3
S Type
12
3
L Type
1. Base
2. Collector
3. Emitter
4. Collector
2SB1407(L)/(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–35
V
Collector to emitter voltage
VCEO
–35
V
Emitter to base voltage
VEBO
–5
V
Collector current
IC
–2.5
A
Collector peak current
I C(peak)
–3
A
18
W
1
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
–35
—
—
V
I C = –1 mA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
–35
—
—
V
I C = –10 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
–5
—
—
V
I E = –1 mA, IC = 0
Collector cutoff current
I CBO
—
—
–20
µA
VCB = –35 V, IE = 0
60
—
320
VCE = –2 V, IC = –0.5 A*2
hFE2
20
—
—
VCE = –2 V, IC = –1.5 A*2
Base to emitter voltage
VBE
—
—
–1.5
V
VCE = –2 V, IC = –1.5 A*2
Collector to emitter saturation
voltage
VCE(sat)
—
—
–1.0
V
I C = –2 A, IB = –0.2 A*2
DC current transfer ratio
hFE1*
1
Notes: 1. The 2SB1407(L)/(S) is grouped by h FE1 as follows.
B
C
D
60 to 120
100 to 200
160 to 320
2. Pulse test.
2
2SB1407(L)/(S)
Maximum Collector Dissipation Curve
Area of Safe Operation
Collector Current IC (A)
–10
20
10
0
50
100
Case Temperature TC (°C)
iC (peak)
–3
–1.0
–0.3
Ta = 25°C
1 Shot Pulse
–3
–10
–30
–100
Collector to emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Typical Output Characteristics
–16
–14
–12
–1.6
–10
–1.2
–8
–6
–0.8
–4
–2 mA
–0.4
IB = 0
0
Ta = 25°C
–1
–2
–3
–4
–5
Collector to emitter Voltage VCE (V)
1,000
DC current transfer ratio hFE
Collector Current IC (A)
–2.0
10 ms
IC (max)
–0.1
–1
150
PW =
s
1m
n
tio
era
Op °C)
DC = 25
(T C
Collector power dissipation Pc (W)
30
300
100
30
10
–0.03
VCE = –2 V
Ta = 25°C
–0.1
–0.3
–1.0
Collector current IC (A)
–3.0
3
2SB1407(L)/(S)
Typical Transfer Characteristics
Saturation Voltage vs. Collector Current
–2.0
4
Collector current IC (A)
Collector to emitter saturation voltage
VCE (sat) (V)
–1.0
–0.3
–0.1
–0.03
–0.01
–0.03
–1.2
–0.8
–0.4
VCE = –2 V
Ta = 25°C
lC = 10 lB
Ta = 25°C
–0.1
–0.3
–1.0
Collector current IC (A)
–1.6
–3.0
0
–0.5
–0.4
–0.8
–1.2
–1.6
–2.0
Base to emitter voltage VBE (V)
2.3 ± 0.2
0.55 ± 0.1
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
1.7 ± 0.5
Unit: mm
2.29 ± 0.5
16.2 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
3.1 ± 0.5
1.2 ± 0.3
2.29 ± 0.5
0.55 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
DPAK (L)-(1)
—
Conforms
0.42 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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