2SD1138 Silicon NPN Triple Diffused Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB861 Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SD1138 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO 6 V Collector current IC 2 A Collector peak current I C (peak) 5 A Collector power dissipation PC 1.8 W 30 W PC * 1 Junction temperature Tj 150 °C Storage temperature Tstg –45 to +150 °C Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown V(BR)CEO voltage 150 — — V I C = 50 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 6 — — V I E = 5 mA, IC = 0 Collector cutoff current I CBO — — 1 µA VCB = 120 V, IE = 0 60 — 320 VCE = 4 V, IC = 50 mA hFE2 60 — — VCE = 10 V, IC = 500 mA*2 Collector to emitter saturation voltage VCE (sat) — — 3.0 V I C = 500 mA, IB = 50 mA*2 Base to emitter voltage VBE — — 1.0 V VCB = 4 V, IC = 50 mA Collector output capacitance Cob — 20 — pF VCB = 100 V, IE = 0, f = 1 MHz DC current transfer ratio Note: hFE1* 1 1. The 2SD1138 is grouped by h FE1 as follows. 2. Pulse test. B C D 60 to 120 100 to 200 160 to 320 2 2SD1138 Maximum Collector Dissipation Curve Area of Safe Operation 10 5 (T C 0.5 ) °C 0.2 0.1 Ta 50 100 150 Ambient temperature Ta (°C) Case temperature TC (°C) (150 V, 65 mA) 200 0.05 2 5 10 20 50 100 200 Collector to emitter voltage VCE (V) Typical Transfer Characteristics Typical Output Characteristics 1,000 TC = 25°C 10 0.8 9 8 7 6 0.6 5 4 3 0.4 2 0.2 1 mA IB = 0 0 2 4 6 8 10 Collector to emitter voltage VCE (V) VCE = 4 V 500 Collector current IC (mA) Collector current IC (A) 1.0 25 (60 V, 0.4 A) = 0 n 1.8 W tio 10 ra TC IC (max) 1.0 Continuous pe 20 (15 V, 2 A) 2 O Collector current IC (A) 30 DC Collector power dissipation Pc (W) 40 200 100 50 20 TC = 75°C 25 10 –25 5 2 1 0 0.2 0.4 0.6 0.8 1.0 Base to emitter voltage VBE (V) 3 2SD1138 DC current transfer ratio hFE 500 VCE = 4 V 200 TC = 75°C 100 25 –25 50 20 10 5 10 4 20 50 100 200 500 1,000 2,000 Collector current IC (mA) Collector to emitter saturation voltage VCE (sat) (V) DC Current Transfer Ratio vs. Collector Current Collector to Emitter Saturation Voltage vs. Collector Current 0.5 IC = 10 IB 0.2 TC = 75°C 0.1 0.05 –25 25 0.02 0.01 0.005 10 20 50 100 200 500 1,000 2,000 Collector current IC (mA) Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 φ 3.6 -0.08 +0.1 1.26 ± 0.15 15.0 ± 0.3 6.4 18.5 ± 0.5 1.27 +0.2 –0.1 8.0 4.44 ± 0.2 7.8 ± 0.5 1.5 MAX 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 14.0 ± 0.5 2.7 MAX 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g Cautions 1. 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