2SD1133, 2SD1134 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SD1133 2SD1134 Unit Collector to base voltage VCBO 70 70 V Collector to emitter voltage VCEO 50 60 V Emitter to base voltage VEBO 5 5 V Collector current IC 4 4 A Collector peak current I C(peak) 8 8 A 40 40 W 1 Collector power dissipation PC * Junction temperature Tj 150 150 °C Storage temperature Tstg –45 to +150 –45 to +150 °C Note: 1. Value at TC = 25°C. 2SD1133, 2SD1134 Electrical Characteristics (Ta = 25°C) 2SD1133 2SD1134 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 70 — — 70 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 50 — — 60 — — V I C = 50 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — 5 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 1 — — 1 µA VCB = 50 V, IE = 0 60 — 320 60 — 320 hFE2 35 — — 35 — — Collector to emitter saturation voltage VCE(sat) — — 1 — — 1 V I C = 2 A, IB = 0.2 A*2 Base to emitter voltage VBE — — 1 — — 1 V VCE = 4 V, IC = 1 A*2 Gain bandwidth product fT — 7 — — 7 — MHz VCE = 4 V, IC = 0.5 A*2 DC current transfer ratio hFE1* 1 VCE = 4V I C = 1 A*2 I C = 0.1 A*2 Notes: 1. The 2SD1133 and 2SD1134 are grouped by h FE1 as follows. 2. Pulse test. B C D 60 to 120 100 to 200 160 to 320 Maximum Collector Dissipation Curve Area of Safe Operation 5 Collector current IC (A) Collector power dissipation PC (W) 60 40 20 (10 V, 4 A) D C ICmax(Continuous) O p 2 (20 V, 2 A) era tio n 1.0 (TC = 25°C) 0.5 (50 V, 0.24 A) 0.2 (60 V, 0.15 A) 0.1 2SD1133 2SD1134 0.05 0 2 50 100 Case temperature TC (°C) 150 1 2 5 10 20 50 100 Collector to emitter voltage VCE (V) 2SD1133, 2SD1134 Typical Output Characteristics Typical Transfer Characteristics 5 5 30 2 20 10 mA 1 1.0 TC = 75°C 25°C –25°C 3 VCE = 4 V 2 90 80 70 60 50 40 4 Collector current IC (A) Collector current IC (A) TC = 25°C 0.5 0.2 0.1 0.05 0.02 IB = 0 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base to emitter voltage VBE (V) 2 4 6 8 10 Collector to emitter voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 1,000 DC current transfer ratio hFE VCE = 4 V 500 200 100 50 TC = 75°C 25 –25 20 10 5 0.01 0.02 0.5 1.0 0.05 0.1 0.2 Collector current IC (A) 2 5 Collector to emitter saturation voltage VCE(sat) (V) 0 Collector to Emitter Saturation Voltage vs. Collector Current 1.4 1.2 IC = 10 IB 1.0 0.8 0.6 TC = 75°C 0.4 0.2 0 0.01 0.02 25 –25 0.05 0.1 0.2 0.5 1.0 Collector current IC (A) 2 5 3 Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 φ 3.6 -0.08 +0.1 1.26 ± 0.15 15.0 ± 0.3 6.4 18.5 ± 0.5 1.27 +0.2 –0.1 8.0 4.44 ± 0.2 7.8 ± 0.5 1.5 MAX 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 14.0 ± 0.5 2.7 MAX 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g Cautions 1. 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