HITACHI 2SD1133

2SD1133, 2SD1134
Silicon NPN Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SB857 and 2SB858
Outline
TO-220AB
1
1. Base
2. Collector
(Flange)
3. Emitter
2 3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
2SD1133
2SD1134
Unit
Collector to base voltage
VCBO
70
70
V
Collector to emitter voltage
VCEO
50
60
V
Emitter to base voltage
VEBO
5
5
V
Collector current
IC
4
4
A
Collector peak current
I C(peak)
8
8
A
40
40
W
1
Collector power dissipation
PC *
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–45 to +150
–45 to +150
°C
Note:
1. Value at TC = 25°C.
2SD1133, 2SD1134
Electrical Characteristics (Ta = 25°C)
2SD1133
2SD1134
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
70
—
—
70
—
—
V
I C = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
50
—
—
60
—
—
V
I C = 50 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
5
—
—
5
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
1
—
—
1
µA
VCB = 50 V, IE = 0
60
—
320
60
—
320
hFE2
35
—
—
35
—
—
Collector to emitter
saturation voltage
VCE(sat)
—
—
1
—
—
1
V
I C = 2 A, IB = 0.2 A*2
Base to emitter voltage
VBE
—
—
1
—
—
1
V
VCE = 4 V, IC = 1 A*2
Gain bandwidth product
fT
—
7
—
—
7
—
MHz
VCE = 4 V, IC = 0.5 A*2
DC current transfer ratio hFE1*
1
VCE = 4V I C = 1 A*2
I C = 0.1 A*2
Notes: 1. The 2SD1133 and 2SD1134 are grouped by h FE1 as follows.
2. Pulse test.
B
C
D
60 to 120
100 to 200
160 to 320
Maximum Collector Dissipation
Curve
Area of Safe Operation
5
Collector current IC (A)
Collector power dissipation PC (W)
60
40
20
(10 V, 4 A)
D
C
ICmax(Continuous)
O
p
2
(20 V, 2 A) era
tio
n
1.0
(TC = 25°C)
0.5
(50 V, 0.24 A)
0.2
(60 V, 0.15 A)
0.1
2SD1133
2SD1134
0.05
0
2
50
100
Case temperature TC (°C)
150
1
2
5
10
20
50 100
Collector to emitter voltage VCE (V)
2SD1133, 2SD1134
Typical Output Characteristics
Typical Transfer Characteristics
5
5
30
2
20
10 mA
1
1.0
TC = 75°C
25°C
–25°C
3
VCE = 4 V
2
90
80
70
60
50
40
4
Collector current IC (A)
Collector current IC (A)
TC = 25°C
0.5
0.2
0.1
0.05
0.02
IB = 0
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base to emitter voltage VBE (V)
2
4
6
8
10
Collector to emitter voltage VCE (V)
DC Current Transfer Ratio
vs. Collector Current
1,000
DC current transfer ratio hFE
VCE = 4 V
500
200
100
50
TC = 75°C
25
–25
20
10
5
0.01 0.02
0.5 1.0
0.05 0.1 0.2
Collector current IC (A)
2
5
Collector to emitter saturation voltage VCE(sat) (V)
0
Collector to Emitter Saturation Voltage
vs. Collector Current
1.4
1.2
IC = 10 IB
1.0
0.8
0.6
TC = 75°C
0.4
0.2
0
0.01 0.02
25
–25
0.05 0.1 0.2
0.5 1.0
Collector current IC (A)
2
5
3
Unit: mm
11.5 MAX
2.79 ± 0.2
10.16 ± 0.2
9.5
φ 3.6 -0.08
+0.1
1.26 ± 0.15
15.0 ± 0.3
6.4
18.5 ± 0.5
1.27
+0.2
–0.1
8.0
4.44 ± 0.2
7.8 ± 0.5
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
14.0 ± 0.5
2.7 MAX
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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