HITACHI PF0310A

PF0310A
MOS FET Power Amplifier Module for VHF Band
ADE-208-315A (Z)
2nd. Edition
July 1996
Features
• Small package: 30 × 10 × 5.9 mm
• High efficiency: 55% Typ
• Low power control current: 0.5 mA Max
Pin Arrangement
• RF-J
5
1
2
3
4
1: Pin
2: VPC
3: VDD
4: Pout
5: GND (Flange)
PF0310A
Internal Diagram and External Circuit
G
G
GND
GND
Pin1
Pin
Pin2
VPC
C1
Z1
Pin
FB1
Pin3
VDD
C3
C4
FB2
Pin4
Pout
C2
VDD
VPC
Z2
Pout
C1 = C2 = 0.01 µF (Ceramic chip capacitor)
C3 = C4 = 10 µF (Aluminum Electrolyte Capacitor)
FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent
Z1 = Z2 = 50 Ω (Microstrip line)
Absolute Maximum Ratings (Tc = 25°C)
Item
Symbol
Rating
Unit
Supply voltage
VDD
17
V
Supply current
I DD
3
A
PC voltage
VPC
4.5
V
Input power
Pin
100
mW
Operating case temperature
Tc (op)
–30 to +100
°C
Storage temperature
Tstg
–40 to +110
°C
2
PF0310A
Electrical Characteristics (Tc = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Frequency range
f
136
—
150
MHz
—
Drain cutoff current
I DS
—
—
100
µA
VDD = 17 V, VPC = 0 V
Total efficiency
ηT
45
55
—
%
Pin = 20 mW, VDD = 9.6 V,
2nd harmonic distortion
2nd H.D.
—
–25
–20
dBc
Pout = 7 W (at VPC controlled),
3rd harmonic distortion
3rd H.D.
—
–35
–30
dBc
RL = Rg = 50 Ω, Tc = 25°C
4th harmonic distortion
4rd H.D.
—
–40
–30
dBc
Input VSWR
VSWR (in)
—
1.5
3.0
—
Output VSWR
VSWR (out) —
1.5
—
—
Output power (1)
Pout (1)
7
9
—
W
Pin = 20 mW, VDD = 9.6 V,
VPC = 4 V, RL = Rg = 50 Ω
Output power (2)
Pout (2)
2.5
3.5
—
W
Pin = 20 mW, VDD = 6 V,
VPC = 3.7 V, RL = Rg = 50 Ω
Load VSWR tolerance
—
No degradation
—
Pin = 20 mW, VDD = 15 V,
Pout ≤ 7 W, (at VPC controlled),
Output VSWR = 6:1 All phases
Stability
—
No parasitic oscillation
—
Pin = 20 mW, VDD = 6 to 15 V,
Pout ≤ 7 W, (at VPC controlled),
Output VSWR = 3:1 All phases
Mechanical Characteristics
Item
Conditions
Spec
Torque for screw up the heatsink flange
M2.6 Screw Bolts
1.5 to 3.5 kg•cm
Warp size of the heatsink flange: S
S=0
+0.1/–0 mm
S
3
PF0310A
Characteristics Curve
Pout vs. Frequency (1)
10.0
Output Power Pout (W)
9.5
Pin = 20 mW
VDD = 9.6 V
VPC = 4 V
9.0
8.5
8.0
7.5
7.0
6.5
135
140
145
Frequency f (MHz)
150
Pout vs. Frequency (2)
Output Power Pout (W)
3.0
Pin = 20 mW
VDD = 4.8 V
VPC = 3.5 V
2.5
2.0
1.5
135
4
140
145
Frequency f (MHz)
150
PF0310A
Pout, ηT vs. Pin (1)
60
3.0
f = 136 MHz
VDD = 4.8 V
VPC = 3.5 V
55
2.6
ηT
50
2.4
Pout
Efficiency ηT (%)
Output Power Pout (W)
2.8
45
2.2
2.0
0
5
15
10
20
40
25
Inpuit Power Pin (mW)
Pout, ηT vs. Pin (2)
60
3.0
Output Power Pout (W)
2.8
ηT
55
Pout
50
2.6
2.4
Efficiency ηT (%)
f = 150 MHz
VDD = 4.8 V
VPC = 3.5 V
45
2.2
2.0
0
5
10
15
20
40
25
Inpuit Power Pin (mW)
5
PF0310A
Pout, ηT vs. Pin (3)
60
f = 136 MHz
VDD = 9.6 V
VPC = 4 V
55
ηT
9
50
Pout
45
8
Efficiency ηT (%)
Output Power Pout (W)
10
40
7
0
5
15
10
20
35
25
Inpuit Power Pin (mW)
Pout, ηT vs. Pin (4)
60
f = 150 MHz
VDD = 9.6 V
VPC = 4 V
ηT
55
9
50
Pout
45
8
40
7
0
5
10
15
Inpuit Power Pin (mW)
6
20
35
25
Efficiency ηT (%)
Output Power Pout (W)
10
PF0310A
Pout, ηT vs. VPC (1)
60
10
50
40
6
Pout
30
4
20
2
Efficiency ηT (%)
8
Output Power Pout (W)
ηT
f = 136 MHz
Pin = 20 mW
VDD = 9.6 V
10
0
0
0
2
1
3
4
5
PC Voltage VPC (V)
Pout, ηT vs. VPC (2)
10
50
40
6
30
Pout
4
20
2
Efficiency ηT (%)
Output Power Pout (W)
8
60
ηT
f = 150 MHz
Pin = 20 mW
VDD = 9.6 V
10
0
0
0
1
2
3
4
5
PC Voltage VPC (V)
7
PF0310A
Pout, ηT vs. VPC (3)
3
50
40
2
Pout
30
20
1
Efficiency ηT (%)
Output Power Pout (W)
60
ηT
f = 136 MHz
Pin = 20 mW
VDD = 4.8 V
10
0
0
0
2
1
3
4
5
PC Voltage VPC (V)
Pout, ηT vs. VPC (4)
3
60
ηT
50
40
2
Pout
30
20
1
10
0
0
0
1
2
3
PC Voltage VPC (V)
8
4
5
Efficiency ηT (%)
Output Power Pout (W)
f = 150 MHz
Pin = 20 mW
VDD = 4.8 V
PF0310A
Package Dimensions
30±0.5
26.6±0.3
22±0.5
3±0.3
6±0.3
10±0.5
Unit: mm
5
+0.5
0.125 –0.05
3 4
6.1±1
11.2±1
16.3±1
23.9±1
4 Min
2
5.9Max
(2.2)
1
(1.5)
(2-R1.5)
+0.5
0.5–0.15
Hitachi code
EIAJ code
JEDEC code
RF-J
—
—
9
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.