PF08103B MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone ADE-208-785C (Z) 4th Edition May 1999 Application • Dual band amplifier for E-GSM900 (880 to 915 MHz) and DCS1800 (1710 to 1785 MHz). • For 3.5 V nominal battery use Features • • • • • • 1 in / 2 out dual band amplifier Simple external circuit including output matching circuit Simple band switching and power control High gain 3stage amplifier : +1 dBm input for GSM, +4.5 dBm input for DCS Lead less thin & Small package : 11 × 13.75 × 1.8 mm High efficiency : 45% Typ at 35.0 dBm for E-GSM 35% Typ at 32.5 dBm for DCS1800 PF08103B Internal Circuit Block Diagram Vdd1 Vdd2 Pout GSM Pin Pout DCS Bias circuit VCTL VCTL Vapc Band Select and Power Control Operating Mode VCTL VCTL Vapc GSM Tx ON H L Control DCS Tx ON L H Control Tx OFF L L < 0.2 V Current of Control Pin Control Pin Equivalent Input Circuit Control Current VCTL 2 µA Max VCTL 1 µA Max Vapc 3 mA Max at 2.2 V Note: Control current is preliminary value. 2 PF08103B Absolute Maximum Ratings (Tc = 25°C) Item Symbol Rating Unit Supply voltage VDD 8.5 V Supply current I DD GSM 3.5 A I DD DCS 2 A VCTL , VCTL voltage VCTL, VCTL 4 V Vapc voltage Vapc 4 V Input power Pin 10 dBm Operating case temperature Tc (op) −30 to +100 °C Storage temperature Tstg −30 to +100 °C Output power Pout GSM 5 W Pout DCS 3 W Note: The maximum ratings shall be valid over both the E-GSM-band (880-915 MHz), and the DCS-band (1710-1785 MHz). Electrical Characteristics for DC (Tc = 25°C) Item Symbol Min Typ Max Unit Test Condition Drain cutoff current Ids 20 µA VDD = 4.7 V, Vapc = 0 V, VCTL = 0 V, VCTL = 0 V 300 µA VDD = 4.7 V, Vapc = 0 V, VCTL = 0 V, VCTL = 0 V, Tc = −20 to +80°C Vapc control current Iapc 3 mA Vapc = 2.2 V VCTL control current I CTL 2 µA VCTL = 3 V VCTL control current I CTL 1 µA VCTL = 3 V 3 PF08103B Electrical Characteristics for GSM900 mode (Tc = 25°C) Test conditions unless otherwise noted: f = 880 to 915MHz, V DD1 = V DD2 = 3.5V, Pin = +1dBm, VCTL = 2.0V, VCTL = 0.1V, Rg = Rl = 50Ω, Tc = 25°C, Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used. Item Symbol Min Typ Max Unit Frequency range f 880 915 MHz Control voltage range Vapc 0.2 2.2 V Total efficiency ηT 40 45 % Pout 2nd harmonic distortion 2nd H.D. −45 −35 dBc Vapc = controlled 3rd harmonic distortion 3rd H.D. −45 −35 dBc 4th~8th harmonic distortion 4th~8th H.D. −35 dBc Input VSWR VSWR (in) 1.5 3.5 Output power (1) Pout (1) 35.0 36.0 dBm Vapc = 2.2V Output power (2) Pout (2) 33.5 34.2 dBm VDD = 3.0V, Vapc = 2.2V, Tc = +85°C Isolation −45 −37 dBm Vapc = 0.2 V Isolation at DCS RF-output when GSM is active −30 −20 dBm Pout GSM = 35dBm (GSM mode) Measured at f = 1760 to 1830MHz, Pin(GSM) = +1dBm Switching time tr, t f 1 2 µs Pout Stability No parasitic oscillation VDD = 3 to 5.1V, Pout ≤ 35.0dBm, Vapc GSM ≤ 2.2V GSM pulse. Rg = 50Ω, Tc = 25°C, Output VSWR = 6 : 1 All phases Load VSWR tolerance No degradation VDD = 3 to 5.1V, Pout GSM ≤ 35.0dBm, Vapc GSM ≤ 2.2V GSM pulse. Rg = 50Ω, t = 20sec., Tc = 25°C, Output VSWR = 10 : 1 All phases Noise power Pnoise1 −80 dBm f0 = 915MHz, f rx = f0 +10MHz Pout GSM = 35dBm, RES BW = 100kHz Pnoise2 −84 dBm f0 = 915MHz, f rx = f0 +20MHz Pout GSM = 35dBm, RES BW = 100kHz Slope Pout/Vapc 200 dB/V Pout GSM = 0 to 35dBm Phase shift 20 deg/ dB Pout GSM = 34 to 35dBm Total conversion gain1 −5 dB f0 = 915MHz, (Pin = +1dBm) Other sig. = 895MHz (Pin = −40dBc) Pout GSM = 33.5dBm Total conversion gain2 −5 dB f0 = 915MHz, (Pin = +1dBm) Other sig. = 905MHz (Pin = −40dBc) Pout GSM = 33.5dBm AM output 20 % Pout GSM = +5dBm, 4%AM modulation at input 50kHz modulation frequency 4 Test Condition GSM GSM = 35dBm, = 0 to 35.0dBm PF08103B Electrical Characteristics for DCS1800 mode (Tc = 25°C) Test conditions unless otherwise noted: f = 1710 to 1785MHz, V DD1 = V DD2 = 3.5V, Pin = +4.5dBm, VCTL = 0.1V, VCTL = 2.0V, Rg = Rl = 50Ω, Tc = 25°C, Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used. Item Symbol Min Typ Max Unit Test Condition Frequency range f 1710 1785 MHz Control voltage range Vapc 0.2 2.2 V Total efficiency ηT 30 35 % Pout 2nd harmonic distortion 2nd H.D. −45 −35 dBc Vapc = controlled 3rd harmonic distortion 3rd H.D. −45 −35 dBc 4th~8th harmonic distortion 4th~8th H.D. –35 dBc Input VSWR VSWR (in) 3 4 Output power (1) Pout (1) 32.5 33 dBm Vapc = 2.2V Output power (2) Pout (2) 30.8 31.3 dBm VDD = 3.1V, Vapc = 2.2V, Tc = +85°C Isolation −42 −37 dBm Vapc = 0.2V Switching time tr, t f 1 2 µs Pout Stability No parasitic oscillation VDD = 3.1 to 5.1V, Pout DCS ≤ 32.5dBm, Vapc ≤ 2.2V DCS pulse. Rg = 50Ω, Tc = 25°C, Output VSWR = 6 : 1 All phases Load VSWR tolerance No degradation VDD = 3.1 to 5.1V, Pout DCS ≤ 32.5dBm, Vapc ≤ 2.2V DCS pulse. Rg = 50Ω, t = 20sec., Tc = 25°C, Output VSWR = 10 : 1 All phases Noise power Pnoise −77 dBm f0 = 1785MHz, frx = f0 +20MHz, Pout DCS = 32.5dBm, RES BW = 100kHz Slope Pout/Vapc 200 dB/V Pout DCS = 0 to 32dBm Phase shift 20 deg/ dB Pout DCS = 31 to 32dBm Total conversion gain −5 dB f0 = 1785MHz, (Pin = +4.5dBm) Other sig. = 1765 MHz (−40dBc) Pout DCS = 31dBm AM output 20 % Pout DCS = 0dBm, 4%AM modulation at input 50kHz modulation frequency DCS DCS = 32.5dBm, = 0 to 32.5dBm 5 PF08103B Package Dimensions Unit: mm 1.8 ± 0.2 7 G 6 5 G 11.0 ± 0.3 (10.8) 11.0 ± 0.3 8 G 1 2 G 3 (Upper side) 4 8 7 G 65 G 13.75 ± 0.3 G (3.40) (1.40) (3.70) (3.70) (2.50) (2.50) (Bottom side) 6 (1.40) (1.40) (1.40) (1.40) (1.40) (2.40) (2.40) 11.0 ± 0.3 (1.60)(1.60) (3.40) (1.60)(1.60) 1 (1.40) 13.75 ± 0.3 (5.40) (5.40) (3.30) (3.30) 2 G 3 4 Pin arrangement 1 : VCTL 2 : VCTL 3 : Vdd2 4 : Pout GSM 5 : Pout DCS 6 : Vdd1 7 : Vapc 8 : Pin G : GND Remark: Coplanarity of bottom side of terminals are less than 0 ± 0.1mm. Hitachi Code JEDEC EIAJ Weight (reference value) RF-O PF08103B Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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