UniFET
FDH50N50_F133 / FDA50N50
TM
500V N-Channel MOSFET
Features
Description
• 48A, 500V, RDS(on) = 0.105Ω @VGS = 10 V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low gate charge ( typical 105 nC)
• Low Crss ( typical 45 pF)
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor
correction.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
{
z
G
{
G D
S
TO-247
FDH Series
z
z
TO-3P
{
S
FDA Series
G DS
Absolute Maximum Ratings
Symbol
Parameter
FDH50N50_F133/FDA50N50
Unit
500
V
48
30.8
A
A
192
A
±20
V
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
1868
mJ
IAR
Avalanche Current
(Note 1)
48
A
EAR
Repetitive Avalanche Energy
(Note 1)
62.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
625
5
W
W/°C
-55 to +150
°C
300
°C
(Note 1)
(TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink
RθJA
Thermal Resistance, Junction-to-Ambient
©2008 Fairchild Semiconductor Corporation
FDH50N50_F133 / FDA50N50 Rev. A
1
Min.
Max.
Unit
--
0.2
°C/W
0.24
--
°C/W
--
40
°C/W
www.fairchildsemi.com
FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
October 2008
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDH50N50_F133
FDH50N50_F133
TO-247
-
-
30
FDA50N50
FDA50N50
TO-3P
-
-
30
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max Units
500
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C
--
0.5
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125°C
---
---
25
250
μA
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 20V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -20V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
V
--
0.089
0.105
Ω
--
20
--
S
--
4979
6460
pF
--
760
1000
pF
--
50
65
pF
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 24A
gFS
Forward Transconductance
VDS = 40V, ID = 48A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 400V, VGS = 0V, f = 1.0MHz
--
161
--
pF
Coss eff.
Effective Output Capacitance
VDS = 0V to 400V, VGS = 0V
--
342
--
pF
VDD = 250V, ID = 48A
RG = 25Ω
--
105
220
ns
--
360
730
ns
--
225
460
ns
--
230
470
ns
--
105
137
nC
--
33
--
nC
--
45
--
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 4, 5)
VDS = 400V, ID = 48A
VGS = 10V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
48
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
192
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 48A
--
--
1.4
V
trr
Reverse Recovery Time
--
580
--
ns
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 48A
dIF/dt =100A/μs
--
10
--
μC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.46mH, IAS = 48A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 48A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDH50N50_F133 / FDA50N50 Rev. A
2
www.fairchildsemi.com
FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
VGS
2
10
100
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
10
ID , Drain Current [A]
ID, Drain Current [A]
Figure 2. Transfer Characteristics
0
10
10
o
150 C
o
25 C
o
-55 C
1
Notes :
1. VDS = 40V
Notes :
1. 250μs Pulse Test
o
2. TC = 25 C
2. 250μs Pulse Test
-1
10
-1
0
10
0.1
1
10
10
4
5
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
8
9
0.3
VGS = 10V
0.2
VGS = 20V
0.1
120
80
o
150 C
o
40
25 C
Notes :
1. VGS = 0V
2. 250μs Pulse Test
o
Note : TJ = 25 C
0.0
0
25
50
75
100
125
150
0
0.2
175
0.4
Figure 5. Capacitance Characteristics
12,000
0.6
0.8
1.0
VDS = 100V
VGS, Gate-Source Voltage [V]
Crss = Cgd
8,000
Ciss
4,000
Coss
Notes :
1. VGS = 0 V
2. f = 1 MHz
2,000
Crss
0
-1
10
0
10
VDS = 250V
10
VDS = 400V
8
6
4
2
Note : ID = 48A
1
10
0
2
10
0
20
40
60
80
100
120
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
FDH50N50_F133 / FDA50N50 Rev. A
1.6
12
Ciss = Cgs + Cgd (Cds = shorted)
6,000
1.4
Figure 6. Gate Charge Characteristics
Coss = Cds + Cgd
10,000
1.2
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Capacitance [pF]
10
160
IDR , Reverse Drain Current [A]
RDS(ON) [Ω],
7
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.4
Drain-Source On-Resistance
6
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
3
www.fairchildsemi.com
FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.5
RDS(ON), (Normalized)
1.1
1.0
Notes :
1. VGS = 0 V
0.9
2. ID = 250 μA
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.0
1.5
1.0
Notes :
1. VGS = 10 V
0.5
2. ID = 24 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
o
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
50
3
10
Operation in This Area
is Limited by R DS(on)
40
10 us
100 us
ID, Drain Current [A]
ID, Drain Current [A]
2
10
1 ms
DC
1
10
10 ms
Notes :
o
1. TC = 25 C
0
10
30
20
10
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
1
10
2
10
0
25
3
10
10
50
125
150
Figure 12. Typical Drain-Source Voltage
Slope vs. Gate Resistance
4,000
45
Notes :
1. VDS = 400 V
3,500
Notes :
1. VDS = 400 V
40
2. VGS = 12 V
2. VGS = 12 V
3. ID = 25A
3,000
3. ID = 25A
35
o
o
4. TJ = 125 C
2,500
di/dt(on)
2,000
1,500
di/dt(off)
1,000
4. TJ = 125 C
30
dv/dt [V/nS]
di/dt [A/μS]
100
TC, Case Temperature [ C]
Figure 11. Typical Drain Current Slope
vs. Gate Resistance
dv/dt(on)
25
20
15
dv/dt(off)
10
500
0
75
o
VDS, Drain-Source Voltage [V]
5
0
5
10
15
20
25
30
35
40
45
0
50
RG, Gate resistance [Ω]
FDH50N50_F133 / FDA50N50 Rev. A
0
5
10
15
20
25
30
35
40
45
50
RG, Gate resistance [Ω]
4
www.fairchildsemi.com
FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 13. Typical Switching Losses vs.
Gate Resistance
Figure 14. Unclamped Inductive Switching
Capability
1,000
100
Notes :
1. If R = 0 Ω
tAV = (L)(IAS)/(1.3 Rated BVDSS - VDD)
2. If R ≠ 0 Ω
tAV = (L/R)In[(IAS x R)/(1.3 Rated BVDSS - VDD)+1]
800
IAS, Avalanche Current [A]
Energy [μJ]
Eoff
600
Eon
400
Notes :
1. VDS = 400 V
200
2. VGS = 12 V
o
o
Starting TJ = 150 C
10
Starting TJ = 25 C
3. ID = 25A
o
0
4. TJ = 125 C
0
5
10
15
20
25
30
35
40
45
1
0.01
50
0.1
RG, Gate resistance [Ω]
1
10
100
tAV, Time In Avalanche [ms]
Figure 15. Transient Thermal Resistance Curve
ZθJC(t), Thermal Response
10
-1
D=0.5
0.2
Notes :
o
1. Z θ JC(t) = 0.2 C/W Max.
0.1
2. Duty Factor, D=t1/t2
0.05
10
-2
3. T JM - T C = P DM * Z θ JC(t)
0.02
0.01
single pulse
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1, Square W ave Pulse Duration [sec]
FDH50N50_F133 / FDA50N50 Rev. A
5
www.fairchildsemi.com
FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
Mechanical Dimensions
TO-247AB
Dimensions in Millimeters
FDH50N50_F133 / FDA50N50 Rev. A
6
www.fairchildsemi.com
FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
Mechanical Dimensions (Continued)
TO-3P
15.60 ±0.20
3.00 ±0.20
3.80 ±0.20
+0.15
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
19.90 ±0.20
1.50 –0.05
16.50 ±0.30
2.00 ±0.20
9.60 ±0.20
4.80 ±0.20
3.50 ±0.20
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
0.60 –0.05
Dimensions in Millimeters
FDH50N50_F133 / FDA50N50 Rev. A
7
www.fairchildsemi.com
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™
®
tm
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
FPS™
F-PFS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
®
tm
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
tm
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
The Power Franchise®
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I37
8
FDH50N50_F133 / FDA50N50 Rev. A
www.fairchildsemi.com
FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.