SuperFETTM FCA35N60 600V N-Channel MOSFET Features Description • 650V @ TJ = 150°C SuperFETTM is Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. • Typ.RDS(on) = 0.079Ω • Ultra low gate charge ( Typ. Qg = 139nC ) • Low effective output capacitance ( Typ. Coss.eff = 340pF ) This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. • 100% avalanche tested D G TO-3PN G DS S MOSFET Maximum Ratings TC = 25 C unless otherwise noted* o Symbol VDSS Drain to Source Voltage Parameter VGSS Gate-Soure voltage -Continuous (TC = 25oC) Ratings 600 Units V ±30 V 35 ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 35 A EAR Repetitive Avalanche Energy (Note 1) 31.25 mJ dv/dt Peak Diode Recovery dv/dt 20 V/ns -Continuous (TC = 100oC) - Pulsed 105 A (Note 2) 1455 mJ (Note 3) Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) (TC = 25oC) PD A 22.2 - Derate above 25oC 312.5 W 2.5 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case RθCS Thermal Resistance, Case-to-Heat Sink RθJA Thermal Resistance, Junction to Ambient ©2009 Fairchild Semiconductor Corporation FCA35N60 Rev. A 1 Typ. Max. - 0.4 0.24 - - 42 Units o C/W www.fairchildsemi.com FCA35N60 N-Channel MOSFET March 2009 Device Marking FCA35N60 Device FCA35N60 Package TO-3PN Reel Size - Tape Width - Quantity 30 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ∆BVDSS / ∆TJ BVDS Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250µA, VGS = 0V, TJ = 25oC 600 - - V ID = 250µA, VGS = 0V, TJ = 150oC - 650 - V ID = 250µA, Referenced to 25oC - 0.6 - V/oC VGS = 0V, ID = 16A - 700 - V VDS = 600V, VGS = 0V - - 1 VDS = 480V, TC = 125oC - - 10 VGS = ±30V, VDS = 0V - - ±100 µA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10V, ID = 17.5A - 0.079 0.098 Ω gFS Forward Transconductance VDS = 40V, ID = 17.5A - 28.8 - S VDS = 25V, VGS = 0V f = 1MHz - 4990 6640 pF - 2380 3170 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 140 - Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz - 113 - pF Coss eff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 340 - pF Qg Total Gate Charge at 10V - 139 181 nC Qgs Gate to Source Gate Charge VDS = 480V, ID = 35A VGS = 10V - 31 - nC Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (G-S) - 69 - nC Drain Open, F= 1MHZ - 1.4 - Ω - 34 78 ns VDD = 300V, ID = 35A RG = 4.7Ω - 120 250 ns - 105 220 ns - 73 155 ns (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 35 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 105 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 35A - - 1.4 V trr Reverse Recovery Time - 614 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 35A dIF/dt = 100A/µs - 16.3 - µC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: IAS = 17.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 35A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Essentially Independent of Operating Temperature Typical Characteristics FCA35N60 Rev. A 2 www.fairchildsemi.com FCA35N60 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted FCA35N60 N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 200 200 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 100 ID, Drain Current[A] 100 ID, Drain Current[A] Figure 2. Transfer Characteristics 10 1 o 150 C 10 o -55 C o 25 C *Notes: 1. 250µs Pulse Test *Notes: 1. VDS = 20V 2. 250µs Pulse Test o 0.3 0.1 2. TC = 25 C 1 VDS, Drain-Source Voltage[V] 10 1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 5 6 7 8 VGS, Gate-Source Voltage[V] 500 IS, Reverse Drain Current [A] 0.20 0.16 0.12 VGS = 10V VGS = 20V 0.08 100 o 150 C 10 *Note: TC = 25 C 0 25 50 75 ID, Drain Current [A] 100 1 0.2 125 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Capacitances [pF] 1.6 10 10000 Ciss 1000 *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 FCA35N60 Rev. A 2. 250µs Pulse Test 0.4 0.8 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 50000 100 o 25 C *Notes: 1. VGS = 0V o 0.04 9 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.24 RDS(ON) [Ω], Drain-Source On-Resistance 4 1 10 100 VDS, Drain-Source Voltage [V] Coss Crss 8 6 4 2 0 600 3 VDS = 100V VDS = 250V VDS = 400V *Note: ID = 35A 0 40 80 120 Qg, Total Gate Charge [nC] 160 www.fairchildsemi.com Figure 8. On-Resistance Variation vs. Temperature 1.15 3.0 1.10 2.5 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250µA 0.90 0.85 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 0.0 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 17.5A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 300 40 10µs 100 ID, Drain Current [A] ID, Drain Current [A] 100µs 1ms 10ms 10 DC Operation in This Area is Limited by R DS(on) 1 *Notes: 0.1 o 30 20 10 1. TC = 25 C o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 0.6 0.5 0.1 0.2 0.1 t1 0.02 0.01 0.01 t2 *Notes: Single pulse o 0.001 -5 10 FCA35N60 Rev. A PDM 0.05 1. ZθJC(t) = 0.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 www.fairchildsemi.com FCA35N60 N-Channel MOSFET Typical Performance Characteristics (Continued) FCA35N60 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCA35N60 Rev. A 5 www.fairchildsemi.com FCA35N60 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FCA35N60 Rev. A 6 www.fairchildsemi.com FCA35N60 N-Channel MOSFET Mechanical Dimensions TO-3PN FCA35N60 Rev. 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