SuperFET TM FCA47N60F 600V N-Channel MOSFET, FRFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. • Typ. RDS(on) = 0.062Ω • Fast Recovery Type ( trr = 240ns) This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. • Ultra Low Gate Charge (typ. Qg = 210nC) • Low Effective Output Capacitance (typ. Cosseff. = 420pF) • 100% avalanche tested D G TO-3PN G DS FCA Series S Absolute Maximum Ratings Symbol Parameter FCA47N60F VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage (Note 1) Unit 600 V 47 29.7 A A 141 A ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 1800 mJ IAR Avalanche Current (Note 1) 47 A EAR Repetitive Avalanche Energy (Note 1) 41.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns PD Power Dissipation 417 3.33 W W/°C -55 to +150 °C 300 °C (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient ©2009 Fairchild Semiconductor Corporation FCA47N60F Rev. A 1 Typ. Max. Unit -- 0.3 °C/W 0.24 -- °C/W -- 41.7 °C/W www.fairchildsemi.com FCA47N60F 600V N-Channel MOSFET, FRFET January 2009 Device Marking Device Package Reel Size Tape Width Quantity FCA47N60F FCA47N60F TO-3PN - - 30 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units VGS = 0V, ID = 250μA, TJ = 25°C 600 -- -- V VGS = 0V, ID = 250μA, TJ = 150°C -- 650 -- V ID = 250μA, Referenced to 25°C -- 0.6 -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 47A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C --- --- 10 100 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 23.5A -- 0.062 0.073 Ω gFS Forward Transconductance VDS = 40V, ID = 23.5A -- 40 -- S -- 5900 8000 pF (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Coss eff. Effective Output Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 3200 4200 pF -- 250 -- pF VDS = 480V, VGS = 0V, f = 1.0MHz -- 160 -- pF VDS = 0V to 400V, VGS = 0V -- 420 -- pF VDD = 300V, ID = 47A RG = 25Ω -- 185 430 ns -- 210 450 ns -- 520 1100 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4, 5) VDS = 480V, ID = 47A VGS = 10V (Note 4, 5) -- 75 160 ns -- 210 270 nC -- 38 -- nC -- 110 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 47 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 141 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 47A -- -- 1.4 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 47A dIF/dt =100A/μs (Note 4) -- 240 -- ns -- 2.04 -- μC NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 47A, di/dt ≤ 1,200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 FCA47N60F Rev. A www.fairchildsemi.com FCA47N60F 600V N-Channel MOSFET, FRFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] 10 2 10 ID , Drain Current [A] 2 1 10 150°C 1 -55°C * Notes : 1. 250μs Pulse Test o 2. TC = 25 C 0 10 -1 0 10 - Note 1. VDS = 40V 0 2. 250μs Pulse Test 10 2 1 10 25°C 10 10 4 VDS, Drain-Source Voltage [V] 8 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.25 IDR , Reverse Drain Current [A] RDS(ON) [Ω],Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.20 0.15 VGS = 10V 0.10 VGS = 20V 0.05 2 10 1 10 150°C 25°C * Notes : 1. VGS = 0V 2. 250μs Pulse Test * Note : TJ = 25°C 0 0.00 0 20 40 60 80 100 120 140 160 180 10 200 0.2 0.4 0.6 Figure 5. Capacitance Characteristics 25000 1.4 1.6 VDS = 100V VGS, Gate-Source Voltage [V] 15000 * Notes : 1. VGS = 0 V 2. f = 1 MHz Ciss 5000 Crss 10 VDS = 250V VDS = 400V 8 6 4 2 * Note : ID = 47A 0 0 10 0 1 10 50 100 150 200 250 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 FCA47N60F Rev. A 1.2 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss 0 -1 10 1.0 Figure 6. Gate Charge Characteristics 20000 10000 0.8 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Capacitance [pF] 6 VGS , Gate-Source Voltage [V] www.fairchildsemi.com FCA47N60F 600V N-Channel MOSFET, FRFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250μA 0.8 -100 -50 0 50 100 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 23.5 A 0.5 150 0.0 -100 200 -50 0 TJ, Junction Temperature [°C] 50 100 150 200 TJ, Junction Temperature [°C] Figure 9. Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 50 Operation in This Area is Limited by R DS(on) 2 40 100 μs ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 ms 1 10 DC * Notes : 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 0 10 0 10 20 10 -1 10 30 1 2 10 0 25 3 10 10 50 75 100 125 150 TC, Case Temperature [°C] VDS, Drain-Source Voltage [V] ZθJC(t), Thermal Response Figure 10. Transient Thermal Response Curve D = 0 .5 10 -1 * N o te s : 1 . Z θ J C ( t) = 0 .3 ° C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .2 0 .1 PDM 0 .0 5 t1 0 .0 2 10 -2 t2 0 .0 1 10 -5 s in g le p u ls e 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] 4 FCA47N60F Rev. A www.fairchildsemi.com FCA47N60F 600V N-Channel MOSFET, FRFET Typical Performance Characteristics (Continued) FCA47N60F 600V N-Channel MOSFET, FRFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 FCA47N60F Rev. A www.fairchildsemi.com FCA47N60F 600V N-Channel MOSFET, FRFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 FCA47N60F Rev. A www.fairchildsemi.com FCA47N60F 600V N-Channel MOSFET, FRFET Mechanical Dimensions TO-3PN Dimensions in Millimeters 7 FCA47N60F Rev. 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