IRFN214B IRFN214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast. • • • • • • 0.6A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! ! " " " TO-92 IRFN Series ! GDS Absolute Maximum Ratings Symbol VDSS ID S TA = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TA = 25°C) Drain Current - Continuous (TA = 70°C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TL = 25°C) dv/dt PD TJ, TSTG TL - Pulsed IRFN214B 250 Units V 0.6 A 0.4 A 2.4 A ± 30 V (Note 2) 45 mJ (Note 1) 0.6 A (Note 1) 0.18 4.8 1.8 0.01 -55 to +150 mJ V/ns W W/°C °C 300 °C (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJL Parameter Thermal Resistance, Junction-to-Lead RθJA Thermal Resistance, Junction-to-Ambient ©2004 Fairchild Semiconductor Corporation Typ -- Max 70 Units °C/W -- 100 °C/W Rev. A, May 2004 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 250 -- -- V -- 0.26 -- V/°C VDS = 250 V, VGS = 0 V -- -- 10 µA VDS = 200 V, TC = 125°C -- -- 100 µA Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 1.49 2.0 Ω -- 0.85 -- S Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.3 A gFS Forward Transconductance VDS = 40 V, ID = 0.3 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 210 275 pF -- 35 45 pF -- 7.5 10 pF -- 5.5 21 ns -- 20 50 ns -- 31 72 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 125 V, ID = 0.5 A, RG = 25 Ω (Note 4, 5) VDS = 200 V, ID = 0.5 A, VGS = 10 V (Note 4, 5) -- 26 62 ns -- 8.1 10.5 nC -- 1.0 -- nC -- 3.7 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 0.6 A ISM -- -- 2.4 A -- -- 1.5 V VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 0.6 A Drain-Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 0.5 A, dIF / dt = 100 A/µs (Note 4) -- 77 -- ns -- 0.2 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 200mH, IAS = 0.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 2.8A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2004 Fairchild Semiconductor Corporation Rev. A, May 2004 IRFN214B Electrical Characteristics IRFN214B Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V Bottom : 4.0 V Top : ID, Drain Current [A] 10 0 10 ID, Drain Current [A] 0 -1 10 o 150 C o 25 C o -55 C ※ Notes : 1. 250µs Pulse Test 2. TA = 25℃ ※ Notes : 1. VDS = 40V 2. 250µs Pulse Test -2 10 -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 8 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 10 VGS = 10V 6 VGS = 20V 4 2 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µs Pulse Test ※ Note : TJ = 25℃ 0 0 2 4 6 8 -1 10 ID, Drain Current [A] 0.2 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.8 1.0 1.2 1.4 1.6 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 VDS = 50V Ciss 300 Coss 200 Crss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 100 VGS, Gate-Source Voltage [V] 10 400 Capacitance [pF] 0.6 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 500 0.4 VDS = 125V VDS = 200V 8 6 4 2 ※ Note : ID = 0.5 A 0 -1 10 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2004 Fairchild Semiconductor Corporation 0 0.0 1.5 3.0 4.5 6.0 7.5 9.0 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. A, May 2004 (Continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage IRFN214B Typical Characteristics 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 0.25 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 0.6 1 10 Operation in This Area is Limited by R DS(on) 0.5 ID, Drain Current [A] ID, Drain Current [A] 100 µs 1 ms 10 ms 100 ms 0 10 1s -1 10 DC -2 10 0.4 0.3 0.2 ※ Notes : o 1. TA = 25 C o 2. TJ = 150 C 3. Single Pulse 0.1 -3 10 0 1 10 0.0 25 2 10 10 50 VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area 10 75 100 125 150 TA, Ambient Temperature [℃] Figure 10. Maximum Drain Current vs Case Temperature 2 Zθ JA(t), Thermal Response D = 0 .5 0 .2 10 0 .1 1 ※ N o te s : 1 . Z θ J A( t ) = 1 0 0 ℃ / W M a x . 2 . D u ty F a c to r, D = t1/t2 3 . T J M - T A = P D M * Z θ J A( t ) 0 .0 5 0 .0 2 0 .0 1 10 PDM 0 t1 s in g le p u ls e 10 -4 10 -3 10 -2 10 -1 10 0 t2 10 1 10 2 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] Figure 11. Transient Thermal Response Curve ©2004 Fairchild Semiconductor Corporation Rev.A, May 2004 IRFN214B Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ©2004 Fairchild Semiconductor Corporation ID (t) VDS (t) VDD tp Time Rev. A, May 2004 IRFN214B Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2004 Fairchild Semiconductor Corporation Rev.A, May 2004 IRFN214B Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A, May 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC Across the board. Around the world.™ OPTOPLANAR™ PACMAN™ The Power Franchise POP™ Programmable Active Droop™ Power247™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11