FAIRCHILD FQT5N20

QFET
TM
FQT5N20
200V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply, DC-AC converters for
uninterrupted power supply, motor control.
•
•
•
•
•
1.0A, 200V, RDS(on) = 1.2Ω @VGS = 10 V
Low gate charge ( typical 6.0 nC)
Low Crss ( typical 6.0 pF)
Fast switching
Improved dv/dt capability
D
!
D
"
G!
S
G
Absolute Maximum Ratings
Symbol
VDSS
ID
!
FQT Series
S
TC = 25°C unless otherwise noted
- Continuous (TC = 70°C)
Drain Current
"
"
SOT-223
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
IDM
! "
- Pulsed
(Note 1)
FQT5N20
200
Units
V
1.0
A
0.8
A
4.0
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
60
mJ
IAR
Avalanche Current
(Note 1)
1.0
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
0.25
5.5
2.5
0.02
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance, Junction-to-Ambient *
Typ
--
Max
50
Units
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
FQT5N20
May 2001
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
200
--
--
V
--
0.2
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
IDSS
IGSSF
IGSSR
VDS = 200 V, VGS = 0 V
--
--
1
µA
VDS = 160 V, TC = 125°C
--
--
10
µA
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
3.0
--
5.0
V
--
0.96
1.2
Ω
--
1.4
--
S
--
210
270
pF
--
40
50
pF
--
6
8
pF
ns
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 0.5 A
gFS
Forward Transconductance
VDS = 40 V, ID = 0.5 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 100 V, ID = 4.5 A,
RG = 25 Ω
(Note 4, 5)
VDS = 160 V, ID = 4.5 A,
VGS = 10 V
(Note 4, 5)
--
7
25
--
55
120
ns
--
9
30
ns
--
25
60
ns
--
6.0
7.5
nC
--
1.5
--
nC
--
2.2
--
nC
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
1.0
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 1.0 A
Drain-Source Diode Forward Voltage
--
--
4.0
A
---
-95
1.5
--
V
ns
--
0.3
--
µC
VSD
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 4.5 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 90mH, IAS = 1.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 4.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
FQT5N20
Electrical Characteristics
FQT5N20
Typical Characteristics
0
ID , Drain Current [A]
10
Bottom :
VGS
15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
ID , Drain Current [A]
Top :
0
10
150℃
25℃
-55℃
※ Notes :
1. VDS = 40V
2. 250μ s Pulse Test
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
-1
10
-1
-1
0
10
10
1
10
2
10
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
7
5
IDR , Reverse Drain Current [A]
RDS(on) [ Ω ],
Drain-Source On-Resistance
6
VGS = 10V
4
VGS = 20V
3
2
0
10
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
1
0
0.0
-1
1.5
3.0
4.5
6.0
7.5
9.0
10
0.2
0.4
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
350
1.2
1.4
VDS = 40V
VDS = 100V
Coss
150
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
Crss
50
VGS , Gate-Source Voltage [V]
Ciss
250
Capacitances [pF]
1.0
12
10
200
0.8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
300
0.6
VSD , Source-Drain Voltage [V]
VDS = 160V
8
6
4
2
※ Note : ID = 4.5 A
0
0
-1
10
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
0
1
2
3
4
5
6
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, May 2001
FQT5N20
Typical Characteristics
(Continued)
3.0
1.2
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 0.5 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.0
Operation in This Area
is Limited by R DS(on)
1
10
0.8
100 µs
10
ID, Drain Current [A]
ID, Drain Current [A]
1 ms
0
10 ms
100 ms
0.6
DC
-1
10
0.4
※ Notes :
-2
10
0.2
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-3
10
-1
10
0
1
10
0.0
25
2
10
10
50
75
Figure 9. Maximum Safe Operating Area
125
150
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
※ N o te s :
1 . Z θ J C( t ) = 5 0 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 / t 2
3 . T J M - T C = P D M * Z θ J C( t )
0 .2
1
0 .1
0 .0 5
10
0 .0 2
0
PDM
0 .0 1
θ JC
(t), T h e rm a l R e s p o n s e
100
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
t1
Z
s in g le p u ls e
10
t2
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
FQT5N20
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
FQT5N20
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
12V
Qg
10V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
ID (t)
10V
DUT
VDS (t)
VDD
tp
©2001 Fairchild Semiconductor Corporation
Time
Rev. A, May 2001
FQT5N20
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
FQT5N20
Package Dimensions
3.00 ±0.10
4.60 ±0.25
6.50 ±0.20
(0.89)
(0.95)
(0.46)
1.60 ±0.20
2.30 TYP
©2001 Fairchild Semiconductor Corporation
0.70 ±0.10
(0.95)
10
+0.10
0.25 –0.05
0°~
7.00 ±0.30
(0.60)
+0.04
0.06 –0.02
(0.60)
3.50 ±0.20
1.75 ±0.20
MAX1.80
0.65 ±0.20
0.08MAX
SOT-223
°
Rev. A, May 2001
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CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H2