FOD814 Series, FOD617 Series, FOD817 Series 4-Pin Phototransistor Optocouplers Features Applications ■ AC input response (FOD814 only) FOD814 Series ■ AC line monitor ■ Unknown polarity DC sensor ■ Telephone line interface ■ Applicable to Pb-free IR reflow soldering ■ Compact 4-pin package ■ Current transfer ratio in selected groups: ■ ■ ■ ■ FOD617A: 40–80% FOD817: 50–600% FOD617B: 63–125% FOD817A:80–160% FOD617C: 100–200% FOD817B: 130–260% FOD617D: 160–320% FOD817C:200–400% FOD814: 20–300% FOD817D:300–600% FOD814A: 50–150% C-UL, UL and VDE approved High input-output isolation voltage of 5000Vrms Higher operating temperatures (versus FODXXX counterparts) Minimum BVCEO of 70V guaranteed FOD617 and FOD817 Series ■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. Functional Block Diagram ANODE, CATHODE 1 4 COLLECTOR CATHODE, ANODE 2 3 EMITTER ANODE 1 CATHODE 2 FOD814 ©2005 Fairchild Semiconductor Corporation FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.2 4 COLLECTOR 3 EMITTER FOD617/817 1 4 1 www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series 4-Pin Phototransistor Optocouplers November 2005 Value Parameter Symbol FOD814 Units FOD617/817 TOTAL DEVICE Storage Temperature TSTG Operating Temperature TOPR -55 to +150 Lead Solder Temperature TSOL 260 for 10 sec °C Total Power Dissipation PTOT 200 mW -55 to +105 °C -55 to +110 °C EMITTER Continuous Forward Current IF ±50 50 mA Reverse Voltage VR — 6 Power Dissipation Derate above 100°C PD 70 1.7 mW mW/°C Collector-Emitter Voltage VCEO 70 V Emitter-Collector Voltage VECO DETECTOR 6 6 (FOD817) 7 (FOD617) V Continuous Collector Current IC 50 mA Collector Power Dissipation Derate above 90°C PC 150 2.9 mW mW/°C 2 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.2 www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series 4-Pin Phototransistor Optocouplers Absolute Maximum Ratings (TA = 25°C Unless otherwise specified.) Individual Component Characteristics Parameter Device Test Conditions Symbol Min Typ* Max Unit Forward Voltage FOD814 FOD617 FOD817 (IF = ±20 mA) (IF = 60 mA) (IF = 20 mA) VF — — — 1.2 1.35 1.2 1.4 1.65 1.4 V Reverse Leakage Current FOD617 FOD817 (VR = 6.0 V) (VR = 4.0 V) IR — — 0.001 — 10 10 µA Terminal Capacitance FOD814 FOD617 FOD817 (V = 0, f = 1 kHz) (V = 0, f = 1 kHz) (V = 0, f = 1 kHz) Ct — — — 50 30 30 250 250 250 pF FOD814 FOD617C/ D FOD617A/ B FOD817 (VCE = 20 V, IF = 0) (VCE = 10 V, IF = 0) (VCE = 10 V, IF = 0) (VCE = 20 V, IF = 0) ICEO — — — — — 1 1 — 100 100 50 100 nA Collector-Emitter Breakdown Voltage FOD814 FOD617 FOD817 (IC = 0.1 mA, IF = 0) (IC = 100 µA, IF = 0) (IC = 0.1 mA, IF = 0) BVCEO 70 70 70 — — — — — — V Emitter-Collector Breakdown Voltage FOD814 FOD617 FOD817 (IE = 10 µA, IF = 0) (IE = 10 µA, IF = 0) (IE = 10 µA, IF = 0) BVECO 6 7 6 — — — — — — V EMITTER DETECTOR Collector Dark Current Transfer Characteristics (TA = 25°C Unless otherwise specified.) DC Characteristic Current Transfer Ratio Device Test Conditions Symbol Min Typ* Max Unit FOD814 IF = ±1 mA, VCE = 5 V1 CTR 20 — 300 % FOD814A 50 150 40 80 FOD617B 63 125 FOD617C 100 200 160 320 FOD617A IF = 10 mA, VCE = 5 V1 FOD617D FOD617A IF = 1 mA, VCE = 5 V1 13 FOD617B 22 FOD617C 34 FOD617D 50 — 600 FOD817A 80 — 160 FOD817B 130 — 260 FOD817C 200 — 400 FOD817D 300 — 600 — 0.1 0.2 — — 0.4 — 0.1 0.2 15 80 — FOD817 Collector-Emitter Saturation Voltage Cut-Off Frequency 56 IF = 5 mA, VCE = 5 V1 FOD814 IF = ±20 mA, IC = 1 mA FOD617 IF = 10 mA, IC = 2.5 mA FOD817 IF = 20 mA, IC = 1 mA FOD814 VCE = 5 V, IC = 2 mA, RL = 100 Ω, -3dB VCE (sat) fC V KHz *Typical values at TA = 25°C 3 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.2 www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series 4-Pin Phototransistor Optocouplers Electrical/Characteristics (TA = 25°C Unless otherwise specified.) AC Characteristic Device Response Time (Rise) FOD814 FOD617 FOD817 Response Time (Fall) FOD814 FOD617 FOD817 Test Conditions VCE = 2 V, IC = 2 mA, RL = 100 Ω2 Symbol Min Typ* Max Unit tr — 4 18 µs tf — 3 18 µs Isolation Characteristics Characteristic Device Test Conditions Symbol Min Input-Output Isolation Voltage3 FOD814 f = 60Hz, t = 1 min VISO 5000 VI-O = 500 VDC RISO 5x1010 VI-O = 0, f = 1 MHz CISO Typ* Max Units Vac(rms) FOD617 FOD817 Isolation Resistance FOD814 1x1011 — Ω 0.6 1.0 pf FOD617 FOD817 Isolation Capacitance FOD814 FOD617 FOD817 *Typical values at TA = 25°C Notes 1. Current Transfer Ratio (CTR) = IC/IF x 100%. 2. For test circuit setup and waveforms, refer to page 4. 3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common. 4 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.2 www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series 4-Pin Phototransistor Optocouplers Transfer Characteristics (continued) (TA = 25°C Unless otherwise specified.) COLLECTOR POWER DISSIPATION PC (mW) 200 150 100 50 0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 6 Fig. 3 Collector-Emitter Saturation Voltage vs. Forward Current Ic = 0.5m A 1m A 3m A 5m A 5 4 2 1 0 2.5 5.0 7.5 10.0 12.5 FORWARD CURRENT IF (mA) CURRENT TRANSFER RATIO CTR ( %) FORWARD CURRENT IF (mA) 0 -55 -40 -20 0 20 40 60 80 100 120 75oC o 50 C 25oC 0oC o -30 C o -55 C 1.5 75oC o 50 C 10 25oC 0oC o -30 C 1 o -55 C 140 1.0 1.5 2.0 120 V = 5V Ta= 25°C 100 5 FOD617/817 80 60 40 FOD814 20 0 0. 1 0.2 2.0 FORWARD VOLTAGE VF (V) FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.2 o TA = 105 C Fig. 6 Current Transfer Ratio vs. Forward Current TA = 110 C 1.0 50 FORWARD VOLTAGE VF (V) o 0.1 0.5 100 0.1 0.5 15.0 Fig. 5 Forward Current vs. Forward Voltage (FOD617/817) 100 1 150 Ta = 25°C 3 10 200 Fig. 4 Forward Current vs. Forward Voltage (FOD814) 100 7m A 0 Fig. 2 Collector Power Dissipation vs. Ambient Temperature (FOD617/817) AMBIENT TEMPERATURE TA (°C) FORWARD CURRENT IF (mA) COLLECTOR POWER DISSIPATION PC (mW) Fig. 1 Collector Power Dissipation vs. Ambient Temperature (FOD814) 0.5 1 2 5 10 20 50 100 FORWARD CURRENT IF (mA) www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series 4-Pin Phototransistor Optocouplers Typical Electrical/Optical Characteristic Curves (TA = 25°C Unless otherwise specified.) Fig. 8 Collector Current vs. Collector-Emitter Voltage (FOD617/817) Fig. 7 Collector Current vs. Collector-Emitter Voltage (FOD814) 30 50 I F = 30m A 40 20 m A 30 Pc (M AX.) 10m A 20 I IF = 30mA COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) Ta= 25°C 5m A 10 20mA 25 Pc(MAX.) 20 15 10mA 10 5m A 5 1m A 0 0 0 0 10 20 30 40 50 60 70 80 90 100 COLLECTOR-EMITTER VOLTAGE VCE (V) Fig. 9 Relative Current Transfer Ratio vs. Ambient Temperature Fig. 10 Collector-Emitter Saturation Voltage vs. Ambient Temperature COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FOD814 IF = 1 mA VCE = 5V 140 120 100 80 FOD617/817 IF = 5mA VCE = 5V 60 40 20 0 -60 -40 -20 0 Fig. 11 LED Power Dissipation vs. Ambient Temperature (FOD814) I = 20mA F 0.10 IC = 1mA 0.08 0.06 0.04 0.02 Fig. 12 LED Power Dissipation vs. Ambient Temperature (FOD617/817) LED POWER DISSIPATION PLED (mW) 100 80 60 40 20 0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C) 6 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.2 0.12 0.00 -60 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C) 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C) LED POWER DISSIPATION PLED (mW) 10 20 30 40 50 60 70 80 90 COLLECTOR-EMITTER VOLTAGE VCE (V) 160 RELATIVE CURRENT TRANSFER RATIO (%) Ta = 25°C 100 80 60 40 20 0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C) www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series 4-Pin Phototransistor Optocouplers Typical Electrical/Optical Characteristic Curves (TA = 25°C Unless otherwise specified.) Fig. 13 Response Time vs. Load Resistance RESPONSE TIME (µs) 50 20 VCE = 2V Ic= 2mA Ta = 25°C Fig. 14 Frequency Response tr VOLTAGE GAIN AV (dB) 100 tf 10 5 td 2 ts 1 0.5 VCE = 2V Ic = 2mA Ta = 25°C 0 RL=10k 1k 100 -10 0.2 -20 0.2 0.1 COLLECTOR DARK CURRENT ICEO (nA) 0.1 0.2 0.5 1 2 5 LOAD RESISTANCE RL (kΩ) 10 0.5 15 2 10 100 FREQUENCY f (kHz) 1000 Fig. 15 Collector Dark Current vs. Ambient Temperature 10000 VCE = 20V 1000 100 10 1 0.1 0.01 -60 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C) Test Circuit for Frequency Response Test Circuit for Response Time Vcc Input RD Input Vcc Output RL Output RD 10% RL Output 90% td ts tr tf 7 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.2 www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series 4-Pin Phototransistor Optocouplers Typical Electrical/Optical Characteristic Curves (TA = 25°C Unless otherwise specified.) Package Dimensions (Surface Mount) 0.276 (7.00) 0.236 (6.00) 0.200 (5.10) 0.161 (4.10) 0.312 (7.92) 0.288 (7.32) 0.200 (5.10) 0.161 (4.10) SEATING PLANE SEATING PLANE 0.312 (7.92) 0.288 (7.32) 0.157 (4.00) 0.118 (3.00) 0.276 (7.00) 0.236 (6.00) 0.157 (4.00) 0.118 (3.00) 0.010 (0.26) 0.130 (3.30) 0.091 (2.30) 0.051 (1.30) 0.043 (1.10) 0.020 (0.51) TYP 0.024 (0.60) 0.004 (0.10) 0.412 (10.46) 0.388 (9.86) 0.010 (0.26) 0.150 (3.80) 0.110 (2.80) 0.110 (2.79) 0.090 (2.29) 0.300 (7.62) typ Lead Coplanarity 0.004 (0.10) MAX 0.024 (0.60) 0.016 (0.40) 0.110 (2.79) 0.090 (2.29) Package Dimensions (0.4” Lead Spacing) SEATING PLANE 0.049 (1.25) 0.030 (0.76) 0.200 (5.10) 0.161 (4.10) 0.312 (7.92) 0.288 (7.32) 0.157 (4.00) 0.118 (3.00) 1.5 0.276 (7.00) 0.236 (6.00) 1.3 0.291 (7.40) 0.252 (6.40) 0.130 (3.30) 0.091 (2.30) 9 0.110 (2.80) 0.011 (1.80) 0.150 (3.80) 0.110 (2.80) 0.024 (0.60) 0.016 (0.40) Footprint Dimensions (Surface Mount) 0.010 (0.26) 0.110 (2.79) 0.090 (2.29) 0.42 (10.66) 0.38 (9.66) 2.54 NOTE All dimensions are in inches (millimeters) 8 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.2 www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series 4-Pin Phototransistor Optocouplers Package Dimensions (Through Hole) Option Part Number Example Description S FOD814S Surface Mount Lead Bend SD FOD814SD Surface Mount; Tape and reel W FOD814W 0.4" Lead Spacing 300 FOD814300 VDE Approved 300W FOD814300W VDE Approved, 0.4" Lead Spacing 3S FOD8143S VDE Approved, Surface Mount 3SD FOD8143SD VDE Approved, Surface Mount, Tape & Reel Marking Information 4 5 V X ZZ Y 3 814 6 2 1 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 One digit year code 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code 9 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.2 www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series 4-Pin Phototransistor Optocouplers Ordering Information P2 Ø1.55±0.05 P0 1.75±0.1 F W B0 A0 P1 0.3±0.05 K0 NOTE All dimensions are in millimeters Symbol Dimensions in mm (inches) Tape wide Description W 16 ± 0.3 (.63) Pitch of sprocket holes P0 4 ± 0.1 (.15) Distance of compartment F P2 7.5 ± 0.1 (.295) 2 ± 0.1 (.079) Distance of compartment to compartment P1 12 ± 0.1 (.472) Compartment A0 10.45 ± 0.1 (.411) B0 5.30 ± 0.1 (.209) K0 4.25 ± 0.1 (.167) 10 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.2 www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series 4-Pin Phototransistor Optocouplers Carrier Tape Specifications Temperature (°C) Tp Tsmax Ramp-down Tsmin 25°C Soldering zon ts (Preheat) Time (sec) Profile Feature Pb-Sn solder assembly Lead Free assembly Preheat condition (Tsmin-Tsmax / ts) 100°C ~ 150°C 60 ~ 120 sec 150°C ~ 200°C 60 ~120 sec Melt soldering zone 183°C 60 ~ 120 sec 217°C 30 ~ 90 sec Peak temperature (Tp) 240 +0/-5°C 260 +0/-5°C Ramp-down rate 6°C/sec max. 6°C/sec max. Recommended Wave Soldering condition Profile Feature For all solder assembly Peak temperature (Tp) Max 260°C for 10 sec 11 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.2 www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series 4-Pin Phototransistor Optocouplers Lead Free recommended IR Reflow condition The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ 2 E CMOS™ i-Lo™ EnSigna™ ImpliedDisconnect™ FACT™ IntelliMAX™ FACT Quiet Series™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 12 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.2 www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series 4-Pin Phototransistor Optocouplers TRADEMARKS