RENESAS CR3PM

CR3PM-12
Thyristor
Low Power Use
REJ03G0357-0200
Rev.2.00
Mar.01.2005
Features
•
•
•
•
• Insulated Type
• Glass Passivation Type
• UL Recognized : Yellow Card No. E223904
File No. E80271
IT (AV) : 3 A
VDRM : 600 V
IGT : 100 µA
Viso : 1500 V
Outline
PRSS0003AA-A
(Package name: TO-220F)
2
3
1
1. Cathode
2. Anode
3. Gate
12
3
Applications
TV sets, control of household equipment such as electric blanket, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltageNote1
DC off-state voltageNote1
Rev.2.00,
Mar.01.2005,
page 1 of 7
Symbol
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Voltage class
12
600
720
480
600
480
Unit
V
V
V
V
V
CR3PM-12
Parameter
RMS on-state current
Average on-state current
Symbol
IT (RMS)
IT (AV)
Ratings
4.7
3.0
Unit
A
A
ITSM
70
A
I2 t
24.5
A2s
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
Viso
0.5
0.1
6
6
0.3
– 40 to +125
– 40 to +125
2.0
1500
W
W
V
V
A
°C
°C
g
V
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine half wave
180° conduction, Tc = 103°C
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
each terminal to case
Notes: 1. With gate to cathode resistance RGK = 220 Ω.
Electrical Characteristics
Parameter
Repetitive peak reverse current
Symbol
IRRM
Min.
—
Typ.
—
Max.
2.0
Unit
mA
Repetitive peak off-state current
IDRM
—
—
2.0
mA
On-state voltage
VTM
—
—
1.6
V
Gate trigger voltage
VGT
—
—
0.8
V
Gate non-trigger voltage
VGD
0.1
—
—
V
Test conditions
Tj = 125°C, VRRM applied,
RGK = 220 Ω
Tj = 125°C, VDRM applied,
RGK = 220 Ω
Tc = 25°C, ITM = 10 A,
instantaneous value
Tj = 25°C, VD = 6 V, IT = 0.1 A
Tj = 125°C, VD = 1/2 VDRM
RGK = 220 Ω
Tj = 25°C, VD = 6 V, IT = 0.1 A
Junction to caseNote2
Gate trigger current
IGT
1
—
100Note3
µA
Thermal resistance
Rth (j-c)
—
—
4.1
°C/W
Notes: 2. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
3. If special values of IGT are required, choose item D or E from those listed in the table below if possible.
Item
A
B
C
D
E
IGT (µA)
1 to 30
20 to 50
40 to 100
1 to 50
20 to 100
The above values do not include the current flowing through the 220 Ω resistance between the gate and
cathode.
Rev.2.00,
Mar.01.2005,
page 2 of 7
CR3PM-12
Performance Curves
102
7 Tc = 25°C
5
3
2
Rated Surge On-State Current
100
Surge On-State Current (A)
On-State Current (A)
Maximum On-State Characteristics
101
7
5
3
2
100
7
5
3
2
40
30
20
10
2 3 4 5 7 101
2 3 4 5 7 102
VFGM = 6V
PGM = 0.5W
PG(AV) = 0.1W
VGT = 0.8V
IGT = 100µA
(Tj = 25°C)
IFGM = 0.3A
× 100 (%)
Gate Trigger Current vs.
Junction Temperature
103
7
5
3
2
102
7
5
3
2
Typical Example
IGT (25°C)
# 1 45µA
# 2 18µA
#2
#1
101
7
5
3
2
100
–40 –20
0
20
40
60
80 100 120
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
1.0
0.9
Gate Trigger Voltage (V)
50
Gate Characteristics
10–1
7
VGD = 0.1V
5
5 710–1 2 3 5 710 0 2 3 5 710 1 2 3 5 710 2 2 3
Distribution
0.8
Typical Example
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
–40 –20
0
20
40
60
80 100 120
Junction Temperature (°C)
Rev.2.00,
60
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
100
7
5
3
2
70
On-State Voltage (V)
Mar.01.2005,
page 3 of 7
Transient Thermal Impedance (°C/W)
Gate Voltage (V)
101
7
5
3
2
80
0
100
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
102
7
5
3
2
90
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
Time (s)
CR3PM-12
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
160
7
Case Temperature (°C)
Average Power Dissipation (W)
8
180°
6
120°
90°
5
θ = 30°
60°
4
3
θ
2
360°
1
0
1.0
2.0
3.0
4.0
θ = 30°
60
90°
60°
180°
120°
40
1.0
0
2.0
3.0
4.0
5.0
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
120
Average Power Dissipation (W)
8
Resistive,
inductive loads
Natural convection
θ
360°
θ = 180°
120°
90°
60°
30°
100
80
60
40
20
0
7
180°
6
120°
90°
5
θ = 30°
4
60°
3
2
θ
1
360°
θ
Resistive loads
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
1.0
2.0
3.0
4.0
5.0
Average On-State Current (A)
Average On-State Current (A)
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
160
160
140
140
Ambient Temperature (°C)
Ambient Temperature (°C)
Case Temperature (°C)
80
Average On-State Current (A)
140
120
100
80
θ = 30° 60° 90° 120° 180°
60
40
Resistive,
inductive loads
100
Average On-State Current (A)
θ
θ
360°
20 Resistive
loads
0
0
1.0
2.0
3.0
4.0
Average On-State Current (A)
Rev.2.00,
120
0
5.0
160
0
θ
360°
20
Resistive,
inductive loads
0
140
Mar.01.2005,
page 4 of 7
5.0
120
θ = 180°
120°
90°
60°
30°
100
80
60
40
θ
θ
360°
20 Resistive loads
Natural convection
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average On-State Current (A)
CR3PM-12
160
RGK = 220Ω
Typical Example
Holding Current (mA)
140
120
100
80
60
40
20
Turn-Off Time (µs)
Distribution
101
7
5
3
2
Typical Example
100
7
5
3
2
Holding Current vs.
Gate to Cathode Resistance
Turn-On Time vs.
Gate Current
Typical Example
IGT(25°C)
#1
25µA
#2
50µA
#1
300
250
#2
200
150
100
Turn-On Time (µs)
Junction Temperature (°C)
350
50
101
7
5
4
3
2
VD = 100V
Ta = 25°C
Typical Example
IGT (25°C)
# 33µA
#
100
7
5
4
3
2
10–1 0
10
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current (mA)
Turn-Off Time vs.
Junction Temperature
Repetitive Peak Reverse Voltage vs.
Junction Temperature
50
40
30
Typical Example
20
Distribution
10
20
40
60
80 100 120 140 160
Junction Temperature (°C)
Mar.01.2005,
page 5 of 7
× 100 (%)
Gate to Cathode Resistance (kΩ)
IT = 2A
70 VD = 50V
VR = 50V
60 dv/dt = 5V/µs
0
VD = 12V
RGK = 1kΩ
Junction Temperature (°C)
400
0
102
7
5
3
2
10–1
–40 –20 0 20 40 60 80 100 120 140 160
0
–40 –20 0 20 40 60 80 100 120 140 160
80
Rev.2.00,
Holding Current vs.
Junction Temperature
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
Holding Current (RGK = rkΩ)
Holding Current (RGK = 1kΩ)
× 100 (%)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
× 100 (%)
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
CR3PM-12
× 100 (%)
104
7
5
3
2
Gate Trigger Current (tw)
Gate Trigger Current (DC)
Gate Trigger Current vs.
Gate Current Pulse Width
103
Typical Example
tw
0.1s
7
5
3
2
102
7
5
3
2
101
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Gate Current Pulse Width (µs)
Rev.2.00,
Mar.01.2005,
page 6 of 7
CR3PM-12
Package Dimensions
JEITA Package Code
SC-67
RENESAS Code
Package Name
MASS[Typ.]
PRSS0003AA-A
TO-220F
2.0g
Unit: mm
10.5Max
10.5Max
2.8
1.2
8.5
5.0
17
17
8.5
5.0
2.8
5.2
1.2
5.2
φ3.2 ± 0.2
φ3.2 ± 0.2
3.6
0.8
0.5
2.6
0.8
2.54
2.54
0.5
2.6
4.5
2.54
4.5
2.54
1.3Max
13.5Min
13.5Min
3.6
1.3Max
Note: It applies to BCR2PM-12
Order Code
Lead form
Standard packing
Quantity
Standard order code
Straight type
Vinyl sack
100 Type name
Lead form
Tube
50 Type name – Lead forming code
Note : Please confirm the specification about the shipping in detail.
Rev.2.00,
Mar.01.2005,
page 7 of 7
Standard order
code example
CR3PM-12
CR3PM-12-A8
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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