KSC5402D/KSC5402DT KSC5402D/KSC5402DT D-PAK High Voltage High Speed Power Switch Application • • • • • Equivalent Circuit C 1 Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices; D-PAK or TO-220 TO-220 B 1 E 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 1000 Units V VCEO VEBO Collector-Emitter Voltage 450 V Emitter-Base Voltage 12 V IC Collector Current (DC) 2 A ICP *Collector Current (Pulse) 5 A IB Base Current (DC) 1 A IBP *Base Current (Pulse) 2 A PC Power Dissipation(TC=25°C) : D-PAK * : TO-220 30 50 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Characteristics Thermal Resistance TL Junction to Case Junction to Ambient Rθja Maximum Lead Temperature for Soldering Purpose ; 1/8” from Case for 5 Seconds Rating Unit TO-220 2.5 D-PAK 4.17 * 62.5 50 270 270 °C/W °C * Mounted on 1” square PCB (FR4 ro G-10 Material) ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 Symbol BVCBO Parameter Collector-Base Breakdown Voltage BVCEO BVEBO ICES ICEO Test Condition IC=1mA, IE=0 Min. 1000 Typ. 1090 Collector-Emitter Breakdown Voltage IC=5mA, IB=0 450 525 V Emitter-Base Breakdown Voltage IE=1mA, IC=0 12 14 V Collector Cut-off Current VCES=1000V, IEB=0 TC=25°C 0.03 100 TC=125°C 1.2 500 VCE=450V, VB=0 TC=25°C 0.3 100 TC=125°C 15 500 0.01 100 Collector Cut-off Current IEBO Emitter Cut-off Current VEB=10V, IC=0 hFE DC Current Gain VCE=1V, IC=0.4A TC=25°C 14 29 TC=125°C 8 17 VCE=1V, IC=1A TC=25°C 6 9 TC=125°C 4 6 VCE(sat) Collector-Emitter Saturation Voltage IC=0.4, IB=0.04A IC=1A, IB=0.2A VBE(sat) Base-Emitter Saturation Voltage IC=0.4A, IB=0.04A IC=1A, IB=0.2A Max. Units V µA µA µA TC=25°C 0.25 TC=125°C 0.4 0.6 1.0 TC=25°C 0.3 0.75 V TC=125°C 0.65 1.2 V TC=25°C 0.78 1.0 V TC=125°C 0.65 0.9 V TC=25°C 0.85 1.1 V TC=125°C 0.75 1.0 V Cib Input Capacitance VEB=8V, IC=0, f=1MHz 330 500 pF Cob Output Capacitance VCB=10V, IE=0, f=1MHz 35 100 pF fT Current Gain Bandwidth Product IC=0.5A, VCE=10V VF Diode Forward Voltage IF=1A TC=25°C 0.86 1.5 V IF=0.2A TC=25°C 0.75 1.2 V TC=125°C 0.6 TC=25°C 0.8 1.3 V TC=125°C 0.65 IF=0.4A ©2002 Fairchild Semiconductor Corporation 11 MHz V V Rev. B2, December 2002 KSC5402D/KSC5402DT Electrical Characteristics TC=25°C unless otherwise noted tfr Symbol Parameter Diode Froward Recvery Time (di/dt=10A/µs) VCE(DSAT) Dynamic Saturation Voltage Test Condition Min IF=0.2A IF=0.4A IF=1A Typ. 540 520 480 Max. Units ns ns ns IC=0.4A, IB1=40mA VCC=300V @ 1µs 7.5 V @ 3µs 2.5 V IC=1A, IB1=200mA VCC=300 @ 1µs 11.5 V @ 3µs 1.5 V RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20µs) tON tOFF Turn On Time Turn Off Time IC=1A, IB1=200mA IB2=150mA VCC=300V RL = 300Ω TC=25°C 110 TC=125°C 135 TC=25°C 0.95 TC=125°C 1.4 150 ns 1.25 µs ns µs INDUCTIVE LOAD SWITCHING (VCC=15V) tSTG tF Storage Time Fall Time tC Cross-over Time tSTG Storage Time tF Fall Time tC Cross-over Time tSTG Storage Time tF Fall Time tC Cross-over Time ©2002 Fairchild Semiconductor Corporation IC=0.4A, IB1=40mA IB2=200mA, Vz=300V LC=200H IC=0.8A, IB1=160mA IB2=160mA, Vz=300V LC=200H IC=1A, IB1=200mA, IB2=500mA, VZ=300V LC=200µH TC=25°C 0.56 TC=125°C 0.7 TC=25°C 60 TC=125°C 75 TC=25°C 90 TC=125°C 90 TC=25°C TC=125°C 3 TC=25°C 110 TC=125°C 180 TC=25°C 125 TC=125°C 185 TC=25°C 1.1 TC=125°C 1.35 TC=25°C 105 TC=125°C 75 TC=25°C 125 TC=125°C 100 0.65 µs µs 175 ns 175 ns 2.75 µs ns ns µs 175 ns 350 ns 1.2 µs ns ns µs 150 ns 150 ns ns ns Rev. B2, December 2002 KSC5402D/KSC5402DT Electrical Characteristics TC=25°C unless otherwise noted 3.0 IB = 1A 900mA 800mA 700mA 600mA 500mA 400mA 300mA 2.0 VCE = 1V 200mA 1.5 TJ=125℃ 100 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 2.5 100mA 1.0 TJ=25℃ 10 0.5 IB = 0 0.0 0 1 2 3 4 5 1 1E-3 6 0.01 VCE[V], COLLECTOR-EMITTER VOLTAGE TJ=125℃ hFE, DC CURRENT GAIN TJ=25℃ 10 0.01 0.1 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 2. DC current Gain VCE = 6V 1 1E-3 1 IC = 5 IB 10 1 TJ=125℃ TJ=25℃ 0.1 1E-3 0.01 10 IC = 5 IB 1 TJ=25℃ TJ=125℃ 0.1 1 IC[A], COLLECTOR CURRENT Figure 5. Base-Emitter Saturation Voltage ©2002 Fairchild Semiconductor Corporation 1 Figure 4. Collector-Emitter Saturation Voltage VBE(sat), VCE(sat)[V], SATURATION VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 3. DC current Gain 0.01 0.1 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT 0.1 1E-3 1 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic 100 0.1 IC = 10 IB 10 1 TJ=125℃ TJ=25℃ 0.1 1E-3 0.01 0.1 1 IC[A], COLLECTOR CURRENT Figure 6. Collector-Emitter Saturation Voltage Rev. B2, December 2002 KSC5402D/KSC5402DT Typical Characteristics KSC5402D/KSC5402DT 10 1000 IC = 10 IB f=1MHz Cib 1 TJ=25℃ TJ=125℃ 0.1 1E-3 CAPACITANCE [pF] VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics (Continued) 100 Cob 10 0.01 0.1 1 1 10 REVERSE VOLTAGE [V] IC[A], COLLECTOR CURRENT Figure 7. Base-Emitter Saturation Voltage Figure 8. Collector Output Capacitance 2.0 1.5 2.0A 1.5A 1.0 1.0A 0.4A IC=0.2A 0.5 0.0 1E-3 0.01 0.1 tfr [ns], FORWARD RECOVERY TIME 550 TJ=25℃ COLLECTOR VOLTAGE [V] 100 500 450 0.0 1 0.5 IC[A], COLLECTOR CURRENT 1.0 IF [A], FORWARD CURRENT Figure 9. Typical Collector Saturation Region Figure 10. Forward Recovery Time 10 IC=5IB1=2IB2 VCC=300V PW=40µs 1 ton [ns], TIME VFD [V], VOLTAGE 300 TJ=25℃ TJ=125℃ 200 TJ=125℃ TJ=25℃ 100 0.1 0.01 0.1 1 IFD [A], CURRENT Figure 11. Diode Forward Voltage ©2002 Fairchild Semiconductor Corporation 0.4 0.6 0.8 1.0 1.2 1.4 Ic [A], COLLECTOR CURRENT Figure 12. Resistive Switching Time, ton Rev. B2, December 2002 850 IC=5IB1=2IB2 VCC=300V PW=40µs 2.0 IC=10IB1=2IB2 VCC=15V VZ=300V LC=200µH 800 1.5 tsi [ns], TIME toff [µs], TIME 750 TJ=125℃ 700 650 TJ=125℃ TJ=25℃ 600 TJ=25℃ 1.0 550 0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 Ic [A], COLLECTOR CURRENT 1.0 1.2 1.4 Ic [A], COLLECTOR CURRENT Figure 13. Resistive Switching Time, toff Figure 14. Inductive Switching Time, tsi 130 100 120 IC=10IB1=2IB2 VCC=15V VZ=300V LC=200µH 90 80 TJ=25℃ 70 IC=10IB1=2IB2 VCC=15V VZ=300V LC=200µH 110 tC [ns], TIME tfi [ns], TIME 0.8 TJ=125℃ 100 TJ=125℃ TJ=25℃ 90 80 60 70 50 0.4 0.6 0.8 1.0 1.2 60 0.4 1.4 0.6 Ic [A], COLLECTOR CURRENT 0.8 1.0 1.2 1.4 Ic [A], COLLECTOR CURRENT Figure 15. Inductive Switching Time, tfi Figure 16. Inductive Switching Time, tc 450 IC=5IB1=5IB2 VCC=15V 400 V =300V Z LC=200µH 30 350 tfi [ns], TIME tsi [µs], TIME TJ=125℃ 25 TJ=25℃ IC=5IB1=5IB2 VCC=15V VZ=300V LC=200µH 20 0.4 TJ=125℃ 300 250 200 150 TJ=25℃ 100 0.6 0.8 1.0 1.2 Ic [A], COLLECTOR CURRENT Figure 17. Inductive Switching Time, tsi ©2002 Fairchild Semiconductor Corporation 1.4 50 0.4 0.6 0.8 1.0 1.2 1.4 Ic [A], COLLECTOR CURRENT Figure 18. Inductive Switching Time, tfi Rev. B2, December 2002 KSC5402D/KSC5402DT Typical Characteristics (Continued) KSC5402D/KSC5402DT Typical Characteristics (Continued) 1.6 450 IC=5IB1=5IB2 VCC=15V 400 VZ=300V LC=200µH 1.4 TJ=125℃ TJ=125℃ 300 tsi [µs], TIME tC [ns], TIME 350 250 200 TJ=25℃ 1.2 TJ=25℃ 1.0 0.8 150 IC=5IB1=2IB2 VCC=15V V =300V 0.6 L Z=200µH C 100 50 0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 Ic [A], COLLECTOR CURRENT 1.0 1.2 1.4 Ic [A], COLLECTOR CURRENT Figure 19. Inductive Switching Time, tc Figure 20. Inductive Switching Time, tsi 200 IC=5IB1=2IB2 VCC=15V VZ=300V LC=200µH 160 0.8 IC=5IB1=2IB2 VCC=15V VZ=300V LC=200µH 180 140 tC [ns], TIME tfi [ns], TIME 160 TJ=25℃ 120 100 120 TJ=25℃ 100 TJ=125℃ 80 TJ=125℃ 140 80 60 60 40 0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 Ic [A], COLLECTOR CURRENT Figure 21. Inductive Switching Time, tfi 1.0 1.2 1.4 Figure 22. Inductive Switching Time, tc 40 10 10µs 1µs PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT 0.8 Ic [A], COLLECTOR CURRENT 50µs 5ms 1 1ms DC 0.1 0.01 30 20 10 0 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 23. Forward Bias Safe Operating Area ©2002 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 TC[℃], CASE TEMPERATURE Figure 24. Power Derating Rev. B2, December 2002 KSC5402D/KSC5402DT Package Dimensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 KSC5402D/KSC5402DT Package Dimensions (Continued) D-PAK 2.30 ±0.10 MIN0.55 0.91 ±0.10 9.50 ±0.30 0.50 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (1.00) (3.05) (2XR0.25) (0.10) 2.70 ±0.20 6.10 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.90) 2.30 ±0.20 (0.70) 2.30TYP [2.30±0.20] (0.50) 0.89 ±0.10 MAX0.96 (4.34) 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 6.10 ±0.20 5.34 ±0.30 0.70 ±0.20 6.60 ±0.20 0.76 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1