FAIRCHILD KSC5305

KSC5305D
KSC5305D
High Voltage High Speed Power Switch
Application
• Built-in Free-wheeling Diode makes efficient anti saturation operation
• Suitable for half bridge light ballast Applications
• No need to interest an hFE value because of low variable storage-time
spread even though corner spirit product
• Low base drive requirement
Equivalent Circuit
C
B
TO-220
1
1.Base
E
2.Collector
3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector Base Voltage
Value
800
Units
V
VCEO
VEBO
Collector Emitter Voltage
400
V
Emitter Base Voltage
12
V
IC
Collector Current (DC)
5
A
ICP
*Collector Current (Pulse)
10
A
IB
Base Current (DC)
2
A
IBP
*Base Current (Pulse)
4
A
PC
Power Dissipation(TC=25°C)
75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Rθjc
Thermal Resistance
Rθja
©2001 Fairchild Semiconductor Corporation
Characteristics
Junction to Case
Junction to Ambient
Rating
1.65
Unit
°C/W
62.5
Rev. A1, June 2001
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=1mA, IE=0
Min.
800
Typ.
-
Max.
-
Units
V
BVCEO
Collector-Emitter Breakdown Voltage
IC=5mA, IB=0
400
-
-
V
BVEBO
Emitter Cut-off Current
IE=1mA, IC=0
12
-
-
V
ICBO
Collector Cut-off Current
VCB=500V, IE=0
-
-
10
µA
IEBO
Emitter Cut-off Current
VEB = 9V, IC = 0
-
-
10
µA
hFE1
hFE2
DC Current Gain
VCE=1V, IC=0.8A
VCE=1V,IC=2A
22
8
-
-
VCE(sat)
Collector-Emitter Saturation Voltage
IC=0.8A, IB=0.08A
IC=2A, IB=0.4A
-
-
0.4
0.5
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC=0.8A, IB=0.08A
IC=2A, IB=0.4A
-
-
1.0
1.0
V
V
Cob
Output Capacitance
VCB = 10V, f=1MHz
-
-
75
pF
tON
Turn ON Time
-
-
150
ns
tSTG
Storage Time
VCC=300V, IC =2A
IB1 = 0.4A, IB2=-1A
RL = 150Ω
-
-
2
µs
-
-
0.2
µs
VCC=15V,VZ=300V
IC = 2A,IB1 = 0.4A
IB2 = -0.4A, LC=200µH
-
-
2.25
µs
-
-
150
ns
Diode Forward Voltage
IF = 1A
IF = 2A
-
-
1.5
1.6
V
V
* Reverse recovery time
(di/dt = 10A/µs)
IF = 0.4A
IF = 1A
IF = 2A
-
800
1.4
1.9
-
ns
µs
µs
tF
Fall Time
tSTG
Storage Time
tF
Fall Time
VF
trr
*Pulse Test : Pulse Width=5mS, Duty cycles ≤ 10%
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC5305D
Electrical Characteristics TC=25°C unless otherwise noted
KSC5305D
Typical Characteristics
100
IB = 500mA
IB = 450mA
IB = 400mA
IB = 350mA
IB = 300mA
IB = 250mA
IB = 200mA
IB = 150mA
4
3
o
IB = 100mA
IB = 50mA
2
VCE = 1V
o
Ta = 125 C
25 C
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
5
1
o
-25 C
10
IB = 0
0
0
1
2
3
4
5
6
7
8
9
1
0.01
10
0.1
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Figure 1. Static Characteristic
100
VCE = 5V
Ta = 125 C
hFE, DC CURRENT GAIN
o
25 C
o
-20 C
10
1
0.01
0.1
10
IC[A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
o
1
1
10
IC = 10 IB
1
V BE(sat)
V CE(sat)
0.1
0.01
0.01
10
0.1
IC[A], COLLECTOR CURRENT
1
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
10
10
IC = 5IB
o
VBE[V], SATURATION VOLTAGE
VCE(sat)[V], SATURATION VOLTAGE
IC = 5IB
25 C
1
o
Ta = 125 C
0.1
o
-20 C
0.01
0.01
10
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 5. Collector-Emitter Saturation Voltage
©2001 Fairchild Semiconductor Corporation
1
o
-20 C
o
25 C
o
Ta = 125 C
0.1
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 6. Base-Emitter Saturation Voltage
Rev. A1, June 2001
KSC5305D
Typical Characteristics (Continued)
10
1000
f = 1MHz
VCC = 300V
IC = 5IB1 = -2.5IB2
Cob[pF], CAPACITANCE
tSTG, tF [µs], TIME
tSTG
1
tF
0.1
0.01
0.1
100
10
1
1
10
1
Figure 7. Switching Time
Figure 8. Collector Output Capacitance
1.6
VF[V], FORWARD DIODE VOLTAGE
10
1.4
1.2
1.0
0.8
1.0
1.5
1
0.1
0.01
2.0
0.1
If[A], FORWARD CURRENT
1
10
IF[A], FORWARD DIODE CURRENT
Figure 9. Reverse Recovery Time
Figure 10. Forward Diode Voltage
100
100
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
100
VCB[V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
trr[µs], REVERSE RECOVERY TIME
10
10
1µ s
10µ s
DC
1
5ms
1ms
0.1
0.01
80
60
40
20
0
10
100
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 11. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
1000
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 12. Power Derating
Rev. A1, June 2001
KSC5305D
Package Demensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
STAR*POWER™
FAST®
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
reasonably expected to cause the failure of the life support
or (b) support or sustain life, or (c) whose failure to perform
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3