FJC2098 FJC2098 Camera Strobe Flash Application • Complement to FJC1386 • High Collector Current • Low Collector-Emitter Saturation Voltage SOT-89 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 50 Units V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) PC Power Dissipation(TC=25°C) TJ TSTG 5 A 0.5 W Junction Temperature 150 °C Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=50µA, IE=0 Min. 50 BVCEO Collector-Emitter Breakdown Voltage IC=1mA, IB=0 20 BVEBO Emitter-Base Breakdown Voltage IE=50µA, IC=0 6 ICEO Collector Cut-off Current VCE=40V, VB=0 IEBO Emitter Cut-off Current VEB=5V, IC=0 hFE DC Current Gain VCE=2V, IC=0.5A Typ. Max. Units V V V 120 0.5 µA 0.5 µA 390 VCE(sat) Collector-Emitter Saturation Voltage IC=4A, IB=0.1A 1.0 VBE(sat) Base-Emitter Saturation Voltage IC=4A, IB=0.1A 1.2 COB Collector Output Capacitance VCB=20V, IE=0, f=1MHz 23 V V pF hFE Classification Classification Q R hFE 120 ~ 270 180 ~ 390 Marking JA Q hFE grade ©2003 Fairchild Semiconductor Corporation Rev. A2, February 2003 FJC2098 Typical Characteristics 14 1000 IB=200mA VCE=2V hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT 12 10 8 6 IB=20mA 4 o Ta=125 C o Ta=25 C o Ta=-40 C 100 2 0 0 2 4 6 8 10 0.01 10 0.1 1 10 100 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 VBE(sat)[V], SATURATION VOLTAGE VCE(sat)[V], SATURATION VOLTAGE IC=40IB 1 o Ta=125 C 0.1 o Ta=25 C o 0.01 Ta=-40 C 1E-3 0.01 0.1 1 IC=40IB o 1 Ta=-40 C o Ta=25 C o Ta=125 C 0.1 0.01 10 IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage 1 10 Figure 4. Base-Emitter Saturation Voltage 1.8 100 VCE=2V IE=0,f=1MHZ Cob[pF], OUTPUT CAPACITANCE IC[A], COLLECTOR CURRENT 1.6 1.4 1.2 o Ta=125 C 1.0 o o 25 C -40 C 0.8 0.6 0.4 0.2 0.0 0.0 0.1 IC[A], COLLECTOR CURRENT 0.2 0.4 0.6 0.8 1.0 1.2 VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage ©2003 Fairchild Semiconductor Corporation 1.4 80 60 40 20 0 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 6. Common-Base Open-Circuit Output Capacitance Rev. A2, February 2003 FJC2098 Package Dimensions SOT-89 1.50 ±0.20 4.50 ±0.20 (0.40) 4.10 (1.10) 2.50 ±0.20 C0.2 ±0.20 (0.50) 1.65 ±0.10 0.50 ±0.10 0.40 ±0.10 0.40 +0.10 –0.05 1.50 TYP 1.50 TYP Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. A2, February 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2003 Fairchild Semiconductor Corporation Rev. I2