2N6428A tm NPN Epitaxial Silicon Transistor Features • This device is designed for high gain, general purpose amplifier applications at collector currents from 1uA to 200 mA. TO92 1 2 3 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current - Continuous 200 mA PD Total Device Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature Range - 55 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics* Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 60 V BVCEO Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 50 V BVEBO Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 5 V ICBO Collector Cut-off Current VCB = 30V, IE = 0 10 nA IEBO Emitter Cut-off Current VBE = 5V, IC = 0 10 nA hFE DC Current Gain VCE = 5V, IC = 0.01mA VCE = 5V, IC = 0.1mA VCE = 5V, IC = 1.0mA VCE = 5V, IC = 10mA 250 250 250 250 650 650 VCE (sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA 0.2 0.6 V V VBE (on) Base-Emitter On Voltage VCE = 5V, IC = 1.0mA 0.56 0.66 V fT Current Gain Bandwidth Product IC = 1mA, VCE = 5.0V, f = 100MHz 100 700 MHz Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 3 pF * DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation 2N6428A Rev. A 1 www.fairchildsemi.com 2N6428A NPN Epitaxial Silicon Transistor December 2006 2N6428A NPN Epitaxial Silicon Transistor Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] (0.25) +0.10 0.38 –0.05 0.38 –0.05 ±0.20 3.86MAX 3.60 1.02 ±0.10 +0.10 1.27TYP [1.27 ±0.20] (R2.29) Dimensions in Millimeters 2 2N6428A Rev. A www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 3 2N6428A Rev. 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