CDIL BF494B

BF494
tm
NPN RF Transistor
TO-92
Absolute Maximum Ratings *
Symbol
1. Collector 2. Emitter 3. Base
Ta = 25°C unless otherwise noted
Value
Unit
VCEO
Collector-Emitter Voltage
Parameter
20
V
VCBO
Collector-Base Voltage
30
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
30
mA
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature Range
- 55 ~ 150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
Parameter
Value
Unit
PD
Total Device Dissipation, by RθJA
Derate above 25°C
350
2.8
mW
mW/°C
RθJC
Thermal Resistance, Junction to case
125
°C/W
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
Electrical Characteristics*
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Max.
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 1.0mA, IB = 0
20
V
V(BR)CBO
Collector-Base BreakdownVoltage
V(BR)EBO
Emitter-Base Breakdown Voltage
IC = 10µA, IE = 0
30
V
IE = 10µA, IC = 0
5.0
V
ICES
Collector-Emitter Sustaining Current
VCE = 40V, VEB = 0V
hFE
DC Current Gain
VCE = 10V, IC = 1mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10mA, IB = 5mA
0.2
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10mA, IB = 5mA
0.92
V
VBE(ON)
Base-Emitter On Voltage
VCE = 10V, IC = 10mA
740
mV
10
67
650
nA
222
* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
BF494 Rev. A
1
www.fairchildsemi.com
BF494 NPN RF Transistor
July 2006
BF494 NPN RF Transistor
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
(0.25)
+0.10
0.38 –0.05
0.38 –0.05
±0.20
3.86MAX
3.60
1.02 ±0.10
+0.10
1.27TYP
[1.27 ±0.20]
(R2.29)
Dimensions in Millimeters
2
BF494 Rev. A
www.fairchildsemi.com
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(c) whose failure to perform when properly used in accordance with
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
3
BF494 Rev. A
www.fairchildsemi.com
BF494 NPN RF Transistor
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