FMMT549 tm PNP Low Saturation Transistor Features • ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continous. • Sourced from process PB. 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Value Unit VCEO Collector-Emitter Voltage Parameter -30 V VCBO Collector-Base Voltage -35 V VEBO Emitter-Base Voltage -5 V IC Collector Current - Continuous - Peak Pulse Current -1 -2 A A TJ Junction Temperature 150 °C TSTG Storage Temperature Range - 55 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics * Symbol Parameter Value Unit PD Total Device Dissipation, by RθJA Derate above 25°C 500 4 mW mW/°C RθJA Thermal Resistance, Junction to Ambient 250 °C/W * Device mounted on FR-4 PCB 4.5” X 5”, mounting pad 0.02 in2 of 2 oz copper. ©2006 Fairchild Semiconductor Corporation FMMT549 Rev. C 1 www.fairchildsemi.com FMMT549 PNP Low Saturation Transistor August 2006 Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Max. Units Off Characteristics BVCEO Collector-Emitter Breakdown Voltage * IC = -10mA, IB = 0 -30 V BVCBO Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -35 V BVEBO Emitter-Base Breakdown Voltage IE = -100µA, IC = 0 -5.0 ICBO Collector Cutoff Current VCB = -30V, IE = 0 VCB = -30V, IE = 0, Ta = 100°C -100 -10 nA µA IEBO Emitter Cutoff Current VEB= -4.0V, IC=0 -100 nA V On Characteristics * hFE DC Current Gain VCE = -2.0V, IC = -50mA VCE = -2.0V, IC = -500mA VCE = -2.0V, IC = -1A VCE = -2.0V, IC = -2A 70 100 80 40 300 VCE (sat) Collector-Emitter Saturation Voltage IC = -1A, IB = -100mA IC = -2A, IB = -200mA -500 -750 mV mV VBE (sat) Base-Emitter Saturation Voltage IC = -1A, IB = -100mA -1.25 V VBE (on) Base-Emitter On Voltage IC = -1A, VCE = -2.0V -1.0 V Small Signal Characterics fT Current Gain Bandwidth Product IC = -100mA, VCE = -5V, f = 100MHz Cob Output Capacitance VCB = -10V, IE = 0, f = 1MHz 100 MHz 25 pF * DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2% 2 FMMT549 Rev. C www.fairchildsemi.com FMMT549 PNP Low Saturation Transistor Electrical Characteristics* Collector- Emitter Voltage vs Collector current Current Gain vs Collector Current 600 800 500 3.5mA 600 3mA 2.5mA 500 2mA 400 1.5mA 300 200 1mA 100 Ib=0.5mA 0 H FE - CURRENT GAIN Collector Current, Ic [mA] Vce = 2.0V 4mA 700 400 125°C 300 25°C 200 - 40°C 100 0 1 2 3 4 0 0.0001 5 VBESAT -BASE-EMITTER SATURATION VOLTAGE(V) Base-Emitter On Voltage vs Collector Current 1.6 Vce = 2.0V 1.4 1.2 1 - 40 °C 0.8 0.6 25 °C 0.4 125 °C 0.2 0.0001 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 1.6 1.2 1 - 40 °C 0.8 0.6 25 °C 125 °C 0.4 0.2 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 f V=ce1.0MHz = 2.0V - 40°C 100 125°C 0.8 0.6 25°C 0.4 0.2 C ibo 80 60 40 Cobo 20 0.1 1 I C - COLLECTOR CURRENT (A) 0 0.1 10 3 FMMT549 Rev. C β = 10 1.4 120 β = 10 0 0.01 10 Input/Output Capacitance vs Reverse Bias Voltage 1.2 1 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) Base-Emitter Saturation Voltage vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current CAPACITANCE (pf) VCESAT - COLLECTOR-EMITTER VOLTAGE (V) V BEON- BASE-EMITTER ON VOLTAGE (V) Collector-Emitter Voltage, Vce[V] 0.5 1 10 20 V CE - COLLECTOR VOLTAGE (V) 50 100 www.fairchildsemi.com FMMT549 PNP Low Saturation Transistor Typical Characteristics FMMT549 PNP Low Saturation Transistor Package Dimensions 0.45~0.60 0.20 MIN SOT-23 2.40 ±0.10 1.30 ±0.10 0.40 ±0.03 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters 4 FMMT549 Rev. C www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 5 FMMT549 Rev. C www.fairchildsemi.com FMMT549 PNP Low Saturation Transistor TRADEMARKS