MITSUBISHI IGBT MODULES CM150DY-24NF HIGH POWER SWITCHING USE CM150DY-24NF ¡IC ................................................................... 150A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point (Base plate) 94 23 17 23 C1 12 12 G1 E1 12 2-φ6.5 MOUNTING HOLES 4 13 48 20 (14) E2 18 C2E1 E2 G2 4 17 3-M5 NUTS 4 80±0.25 7 16 E2 21.2 29 +1.0 –0.5 C2E1 LABEL C1 G1 E1 16 7.5 7 E2 G2 TAB #110. t=0.5 16 CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM150DY-24NF HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Conditions G-E Short C-E Short DC, TC’ = 110°C*3 Pulse Ratings 1200 ±20 150 300 150 300 780 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 (Note 2) Pulse TC = 25°C (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value Unit V V A A A A W °C °C Vrms N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Parameter Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 15mA, VCE = 10V 6 7 8 V IGES Gate leakage current ±VGE = VGES, VCE = 0V — — — — — — — — — — — — — — — — — — 2.1 — 1.8 2.0 — — — 1000 — — — — — 7.5 — — — 0.07 — — 0.5 2.5 — 35 3 0.68 — 120 80 450 350 150 — 3.2 0.16 0.25 µA VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance Tj = 25°C Tj = 125°C IC = 150A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 150A, VGE = 15V VCC = 600V, IC = 150A VGE = ±15V RG = 2.1Ω, Inductive load IE = 150A IE = 150A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1/2 module) Case temperature measured point is just under the chips mA V nF nF nF nC ns ns ns ns ns — 0.093*3 21 µC V K/W K/W K/W K/W Ω *1 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : Case temperature (Tc’) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. Feb. 2009 2 MITSUBISHI IGBT MODULES CM150DY-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 13 12 200 11 150 100 10 50 9 0 4 2 6 8 10 4 VGE = 15V 3 2 1 Tj = 25°C Tj = 125°C 0 0 50 100 150 200 250 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 7 8 6 4 IC = 150A IC = 300A 2 5 3 2 102 7 5 3 2 Tj = 25°C Tj = 125°C IC = 60A 0 6 8 10 12 14 16 18 101 20 2 3 4 5 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 Cies 101 7 5 Coes 100 7 5 3 2 1 EMITTER-COLLECTOR VOLTAGE VEC (V) 7 5 3 2 0 GATE-EMITTER VOLTAGE VGE (V) 102 3 2 300 103 Tj = 25°C EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj = 25°C 15 250 0 CAPACITANCE Cies, Coes, Cres (nF) VGE = 20V SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) 300 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) Cres VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 102 7 5 3 2 td(on) tr Conditions: VCC = 600V VGE = ±15V RG = 2.1Ω Tj = 125°C Inductive load 101 7 5 3 2 100 1 10 COLLECTOR-EMITTER VOLTAGE VCE (V) tf td(off) 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM150DY-24NF TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 7 5 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HIGH POWER SWITCHING USE 3 2 Irr 102 trr 7 5 3 2 101 1 10 2 3 5 7 102 Conditions: VCC = 600V VGE = ±15V RG = 2.1Ω Tj = 25°C Inductive load 2 3 5 7 103 7 5 3 2 Single Pulse TC = 25°C 10–1 10–1 7 5 3 2 7 5 3 2 IGBT part: 10–2 Per unit base = 7 5 Rth(j–c) = 0.16K/W FWDi part: 3 Per unit base = 2 Rth(j–c) = 0.25K/W –3 10 10–2 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 150A VCC = 400V 16 VCC = 600V 12 8 4 0 0 200 400 600 800 1000 1200 1400 GATE CHARGE QG (nC) Feb. 2009 4