MITSUBISHI IGBT MODULES CM75DY-34A HIGH POWER SWITCHING USE CM75DY-34A ¡IC ..................................................................... 75A ¡VCES ......................................................... 1700V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 23 17 23 12 12 20 (14) C1 G1 E1 12 2-φ6.5 MOUNTING HOLES 4 18 E2 13 48 C2E1 E2 G2 4 17 3-M5 NUTS 80±0.25 4 12.5 (SCREWING DEPTH) 7 16 E2 21.2 29 +1 –0.5 C2E1 LABEL C1 G1 E1 16 7.5 7 E2 G2 TAB #110. t=0.5 16 CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM75DY-34A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — (Tj = 25°C, unless otherwise specified) Parameter Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Conditions Collector-emitter voltage Gate-emitter voltage G-E Short C-E Short DC, TC = 111°C*1 Pulse Operation Pulse TC = 25°C*1 Unit V V A A W °C °C Vrms N•m g (Tj = 25°C, unless otherwise specified) Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistance (Note 2) (Note 2) (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value VCE = VCES, VGE = 0V Min. — Limits Typ. — Max. 1 IC = 7.5mA, VCE = 10V 5.5 7.0 8.5 V — — — — — — — — — — — — — — — — — 6.4 — 2.2 2.45 — — — 500 — — — — — 7.5 — — — 0.022 — 2.0 2.8 — 18.5 2.1 0.4 — 200 150 550 350 300 — 3.0 0.16 0.29 — 64 µA Test conditions Parameter Thermal resistance Ratings 1700 ±20 75 150 75 150 780 –40 ~ +150 –40 ~ +125 3500 2.5 ~ 3.5 3.5 ~ 4.5 310 ±VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C IC = 75A, VGE = 15V VCE = 10V VGE = 0V VCC = 1000V, IC = 75A, VGE = 15V VCC = 1000V, IC = 75A VGE = ±15V RG = 6.4Ω, Inductive load IE = 75A IE = 75A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to heat sink, Thermal compound applied (1/2 module)*1,*2 Unit mA V nF nC ns µC V K/W Ω *1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Feb. 2009 2 MITSUBISHI IGBT MODULES CM75DY-34A HIGH POWER SWITCHING USE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 150 150 13 100 11 50 10 8 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) VGE = 20V VCE = 10V 12 15 0 4 2 6 9 8 50 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 VGE = 15V 4 3 2 1 Tj = 25°C Tj = 125°C 0 0 50 100 150 Tj = 25°C 8 6 IC = 150A IC = 75A 4 2 IC = 30A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 7 5 CAPACITANCE Cies, Coes, Cres (nF) Tj = 25°C Tj = 125°C 3 2 102 7 5 3 2 101 7 5 3 2 100 0.5 10 COLLECTOR CURRENT IC (A) 103 EMITTER CURRENT IE (A) 100 0 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) Tj = 25°C 1 1.5 2 2.5 3 3.5 4 7 5 3 2 Cies 101 7 5 3 2 100 7 5 3 2 10–1 Coes Cres 7 5 3 2 VGE = 0V 10–2 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb. 2009 3 MITSUBISHI IGBT MODULES CM75DY-34A SWITCHING TIME td(on), tr, td(off), tf (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. COLLECTOR CURRENT (TYPICAL) 103 tf 7 td(off) 5 3 2 102 td(on) 7 5 3 2 tr Conditions: 101 VCC = 1000V 7 5 VGE = ±15V 3 RG = 6.4Ω 2 Tj = 125°C Inductive load 100 0 10 2 3 5 7 101 2 3 5 7 102 7 5 tf td(off) 3 2 td(on) 102 7 5 Conditions: VCC = 1000V VGE = ±15V IC = 75A Tj = 125°C Inductive load tr 3 2 101 0 10 2 3 5 7 101 2 3 5 7 102 SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) SWITCHING LOSS Eon, Eoff, Err (mJ/pulse) GATE RESISTANCE RG (Ω) 102 Conditions: VCC = 1000V 5 VGE = ±15V 3 RG = 6.4Ω Tj = 125°C 2 Inductive load 7 101 7 Err Eoff Eon 5 3 2 100 0 10 HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. GATE RESISTANCE (TYPICAL) 103 COLLECTOR CURRENT IC (A) 2 3 5 7 101 2 3 5 7 102 103 Conditions: VCC = 1000V VGE = ±15V 3 IC = 75A Tj = 125°C 2 Inductive load 7 5 102 7 5 3 Err Eoff Eon 2 101 0 10 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 Conditions: VCC = 1000V 5 VGE = ±15V 3 RG = 6.4Ω Tj = 25°C 2 Inductive load TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) SWITCHING LOSS Eon, Eoff, Err (mJ/pulse) SWITCHING TIME td(on), tr, td(off), tf (ns) HIGH POWER SWITCHING USE 102 Irr trr 7 5 3 2 101 0 10 2 3 5 7 101 2 3 5 7 102 100 7 5 3 2 10–1 7 5 3 2 Single Pulse Tc= 25°C Tc measured point is just under the chips 10–2 7 5 IGBT part: 3 Per unit base = Rth(j–c) = 0.16K/W 2 FWDi part: Per unit base = Rth(j–c) = 0.29K/ W 10–3 10–52 3 5710–42 3 5710–32 3 5710–22 3 5710–12 3 57 100 2 3 57 101 TIME (s) EMITTER CURRENT IC (A) Feb. 2009 4 MITSUBISHI IGBT MODULES CM75DY-34A HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 75A VCC = 800V 16 VCC = 1000V 12 8 4 0 0 200 400 600 800 GATE CHARGE QG (nC) Feb. 2009 5