MITSUBISHI IGBT MODULES CM200DU-12NFH HIGH POWER SWITCHING USE CM200DU-12NFH ¡IC ................................................................... 200A ¡VCES ............................................................ 600V ¡Insulated Type ¡2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm TC measured point 94 80 ±0.25 4 G1E1 12 4 4 11 18 E2 G2 C1 E2 C2E1 2–φ6.5 MOUNTING HOLES 23 23 48 CM 24 17 13 7 13.5 2.5 16 TAB C2E1 E2 21.2 +1 30 –0.5 LABEL #110. t=0.5 C1 G1 E1 25 7.5 16 2.5 E2 G2 3–M5NUTS 12mm deep CIRCUIT DIAGRAM Feb.2004 MITSUBISHI IGBT MODULES CM200DU-12NFH HIGH POWER SWITCHING USE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC’ (Note 3) Tj Tstg Viso — — — (Tj = 25°C) Parameter Collector current Emitter current Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight ELECTRICAL CHARACTERISTICS Symbol Conditions Collector-emitter voltage Gate-emitter voltage G-E Short C-E Short Operation Pulse Operation Pulse TC = 25°C TC’ = 25°C*4 Ratings 600 ±20 200 400 200 400 590 830 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 (Note 2) (Note 2) Main Terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M6 Typical value Unit V V A A A A W W °C °C V N•m N•m g (Tj = 25°C) Test conditions Parameter Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 20mA, VCE = 10V 5 6 7 V IGES Gate leakage current Collector-emitter saturation voltage (Note 4) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage VGE = VGES, VCE = 0V Tj = 25°C IC = 200A, VGE = 15V Tj = 125°C — — — — — — — — — — — — — — — — — — 3.1 — 2.0 1.95 — — — 1240 — — — — — 3.5 — — — 0.07 — — 0.5 2.7 — 55 3.6 2.0 — 250 150 500 150 150 — 2.6 0.21 0.35 — µA VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Thermal resistance*1 Contact thermal resistance Thermal resistance VCE = 10V VGE = 0V VCC = 300V, IC = 200A, VGE = 15V VCC = 300V, IC = 200A VGE1 = VGE2 = 15V RG = 6.3Ω, Inductive load switching operation IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound Applied*2 (1/2 module) Tc measured point is just under the chips (1/2 module) External gate resistance 0.15*3 31 mA V nF nF nF nC ns ns ns ns ns µC V °C/W °C/W °C/W °C/W Ω *1 : TC measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : TC’ measured point is just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. No short circuit capability is designed. Feb.2004 MITSUBISHI IGBT MODULES CM200DU-12NFH HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 350 11 VGE = 20V 300 10 Tj = 25°C 9.5 9 8.5 250 8 200 150 7.5 100 7 50 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 13 15 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VGE = 15V 2.5 2 1.5 1 0.5 0 Tj = 25°C Tj = 125°C 0 50 100 150 200 250 300 350 400 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 103 Tj = 25°C 4.5 7 4 3.5 3 IC = 400A 2.5 IC = 200A 2 1.5 IC = 80A 1 0.5 0 6 8 10 12 14 16 18 102 7 5 3 2 Tj = 25°C Tj = 125°C 0 0.5 1 1.5 2 2.5 3 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 Cies 5 101 7 5 3 2 7 5 2 EMITTER-COLLECTOR VOLTAGE VEC (V) 3 2 100 3 GATE-EMITTER VOLTAGE VGE (V) Coes Cres 3 2 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) SWITCHING TIME (ns) 7 5 5 101 20 102 CAPACITANCE Cies, Coes, Cres (nF) 3 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) COLLECTOR CURRENT IC (A) 400 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) td(off) 3 2 td(on) tf tr 102 7 Conditions: VCC = 300V VGE = ±15V RG = 6.3Ω Tj = 125°C Inductive load 5 3 2 101 1 10 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Feb.2004 MITSUBISHI IGBT MODULES CM200DU-12NFH TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part ) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 3 2 102 7 5 trr Irr 3 2 101 1 10 2 3 5 7 102 Conditions: VCC = 300V VGE = ±15V RG = 6.3Ω Tj = 25°C Inductive load 2 3 5 7 103 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HIGH POWER SWITCHING USE 7 5 3 2 Single Pulse TC = 25°C 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 7 5 3 Per unit base = 2 Rth(j–c) = 0.21°C/W 10–3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) GATE CHARGE CHARACTERISTICS (TYPICAL) Single Pulse TC = 25°C 10–1 7 5 3 2 7 5 3 2 10–2 10–2 7 5 3 Per unit base = 2 Rth(j–c) = 0.35°C/W 10–3 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) 20 GATE-EMITTER VOLTAGE VGE (V) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 10–1 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) EMITTER CURRENT IE (A) 7 5 3 2 7 5 3 2 IC = 200A 16 VCC = 200V VCC = 300V 12 8 4 0 0 200 400 800 1200 1600 600 1000 1400 1800 GATE CHARGE QG (nC) Feb.2004