MITSUBISHI CM200DU

MITSUBISHI IGBT MODULES
CM200DU-12NFH
HIGH POWER SWITCHING USE
CM200DU-12NFH
¡IC ................................................................... 200A
¡VCES ............................................................ 600V
¡Insulated Type
¡2-elements in a pack
APPLICATION
High frequency switching use (30kHz to 60kHz).
Gradient amplifier, Induction heating, power supply, etc.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
TC measured point
94
80 ±0.25
4
G1E1
12
4
4 11
18
E2 G2
C1
E2
C2E1
2–φ6.5
MOUNTING HOLES
23
23
48
CM
24
17
13
7
13.5
2.5 16
TAB
C2E1
E2
21.2
+1
30 –0.5
LABEL
#110. t=0.5
C1
G1 E1
25
7.5
16 2.5
E2 G2
3–M5NUTS
12mm deep
CIRCUIT DIAGRAM
Feb.2004
MITSUBISHI IGBT MODULES
CM200DU-12NFH
HIGH POWER SWITCHING USE
MAXIMUM RATINGS
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
PC’ (Note 3)
Tj
Tstg
Viso
—
—
—
(Tj = 25°C)
Parameter
Collector current
Emitter current
Maximum collector dissipation
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
ELECTRICAL CHARACTERISTICS
Symbol
Conditions
Collector-emitter voltage
Gate-emitter voltage
G-E Short
C-E Short
Operation
Pulse
Operation
Pulse
TC = 25°C
TC’ = 25°C*4
Ratings
600
±20
200
400
200
400
590
830
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
(Note 2)
(Note 2)
Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M6
Typical value
Unit
V
V
A
A
A
A
W
W
°C
°C
V
N•m
N•m
g
(Tj = 25°C)
Test conditions
Parameter
Limits
Typ.
—
Max.
1
Unit
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
Min.
—
VGE(th)
Gate-emitter threshold voltage
IC = 20mA, VCE = 10V
5
6
7
V
IGES
Gate leakage current
Collector-emitter
saturation voltage
(Note 4)
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
VGE = VGES, VCE = 0V
Tj = 25°C
IC = 200A, VGE = 15V
Tj = 125°C
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.1
—
2.0
1.95
—
—
—
1240
—
—
—
—
—
3.5
—
—
—
0.07
—
—
0.5
2.7
—
55
3.6
2.0
—
250
150
500
150
150
—
2.6
0.21
0.35
—
µA
VCE(sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
RG
Thermal resistance*1
Contact thermal resistance
Thermal resistance
VCE = 10V
VGE = 0V
VCC = 300V, IC = 200A, VGE = 15V
VCC = 300V, IC = 200A
VGE1 = VGE2 = 15V
RG = 6.3Ω, Inductive load switching operation
IE = 200A
IE = 200A, VGE = 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound Applied*2 (1/2 module)
Tc measured point is just under the chips (1/2 module)
External gate resistance
0.15*3
31
mA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
°C/W
°C/W
°C/W
°C/W
Ω
*1 : TC measured point is shown in page OUTLINE DRAWING.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
*4 : TC’ measured point is just under the chips.
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. No short circuit capability is designed.
Feb.2004
MITSUBISHI IGBT MODULES
CM200DU-12NFH
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
350
11
VGE =
20V
300
10 Tj = 25°C
9.5
9
8.5
250
8
200
150
7.5
100
7
50
0
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
13
15
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VGE = 15V
2.5
2
1.5
1
0.5
0
Tj = 25°C
Tj = 125°C
0
50 100 150 200 250 300 350 400
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5
103
Tj = 25°C
4.5
7
4
3.5
3
IC = 400A
2.5
IC = 200A
2
1.5
IC = 80A
1
0.5
0
6
8
10
12
14
16
18
102
7
5
3
2
Tj = 25°C
Tj = 125°C
0
0.5
1
1.5
2
2.5
3
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
Cies
5
101
7
5
3
2
7
5
2
EMITTER-COLLECTOR VOLTAGE VEC (V)
3
2
100
3
GATE-EMITTER VOLTAGE VGE (V)
Coes
Cres
3
2
VGE = 0V
10–1 –1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
COLLECTOR-EMITTER VOLTAGE VCE (V)
SWITCHING TIME (ns)
7
5
5
101
20
102
CAPACITANCE Cies, Coes, Cres (nF)
3
COLLECTOR-EMITTER VOLTAGE VCE (V)
EMITTER CURRENT IE (A)
COLLECTOR CURRENT IC (A)
400
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
td(off)
3
2
td(on)
tf
tr
102
7
Conditions:
VCC = 300V
VGE = ±15V
RG = 6.3Ω
Tj = 125°C
Inductive load
5
3
2
101 1
10
2
3
5 7 102
2
3
5 7 103
COLLECTOR CURRENT IC (A)
Feb.2004
MITSUBISHI IGBT MODULES
CM200DU-12NFH
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part )
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
7
5
3
2
102
7
5
trr
Irr
3
2
101 1
10
2
3
5
7 102
Conditions:
VCC = 300V
VGE = ±15V
RG = 6.3Ω
Tj = 25°C
Inductive load
2 3
5 7 103
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
100
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j–c)
REVERSE RECOVERY TIME trr (ns)
REVERSE RECOVERY CURRENT lrr (A)
HIGH POWER SWITCHING USE
7
5
3
2
Single Pulse
TC = 25°C
10–1
10–1
7
5
3
2
7
5
3
2
10–2
10–2
7
5
3
Per unit base =
2
Rth(j–c) = 0.21°C/W
10–3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
Single Pulse
TC = 25°C
10–1
7
5
3
2
7
5
3
2
10–2
10–2
7
5
3
Per unit base =
2
Rth(j–c) = 0.35°C/W
10–3
7
5
3
2
10–3
10–5 2 3 5 710–4 2 3 5 7 10–3
TIME (s)
20
GATE-EMITTER VOLTAGE VGE (V)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j–c)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
100
10–1
10–3
10–5 2 3 5 710–4 2 3 5 7 10–3
TIME (s)
EMITTER CURRENT IE (A)
7
5
3
2
7
5
3
2
IC = 200A
16
VCC = 200V
VCC = 300V
12
8
4
0
0
200
400
800
1200
1600
600
1000
1400
1800
GATE CHARGE QG (nC)
Feb.2004