MITSUBISHI IGBT MODULES CM300E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE TC Measured Point A F D S (4 - Mounting Holes) H B E T CM Q Q 3 - M6 Nuts K K K G N P Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel diode and an anode-collector connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. R M C L Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking E2 G2 C2E1 C1 E2 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.25 108.0 B 2.44 C 62.0 1.14 +0.04/-0.02 29 +1.0/-0.5 Dimensions Inches Millimeters K 0.71 18.0 L 0.87 22.0 M 0.33 8.5 N 0.10 2.5 Application: u Brake Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM300E3U-12H is a 600V (VCES), 300 Ampere IGBT Module. D 3.66±0.01 93.0±0.25 E 1.88±0.01 48.0±0.25 P 0.85 21.5 F 0.87 22.0 Q 0.98 25.0 G 0.16 4.0 R 0.11 2.8 Type Current Rating Amperes VCES Volts (x 50) H 0.24 6.0 S 0.25 Dia. 6.5 Dia. CM 300 12 K 0.71 18.0 T 0.6 15.15 Sep.1998 MITSUBISHI IGBT MODULES CM300E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM300E3U-12H Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 300 Amperes ICM 600* Amperes IE 300 Amperes Peak Emitter Current** IEM 600* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 890 Watts Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) Mounting Torque, M6 Main Terminal – 3.5~4.5 N·m Mounting Torque, M6 Mounting – 3.5~4.5 N·m – 400 Grams Viso 2500 Vrms Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 300A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts IC = 300A, VGE = 15V, Tj = 125°C – 2.6 – Volts QG VCC = 300V, IC = 300A, VGE = 15V – – nC Total Gate Charge 600 Emitter-Collector Voltage** VEC IE = 300A, VGE = 0V – – 2.6 Volts Emitter-Collector Voltage VFM IF = 300A, Clamp Diode Part – – 2.6 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive td(on) Turn-on Delay Time Load Rise Time Switch Turn-off Delay Time Times Fall Time Test Conditions VCE = 10V, VGE = 0V VCC = 300V, IC = 300A, Min. Typ. Max. Units – – 26.4 nF – – 14.4 nF – – 4 nF – – 250 ns tr VGE1 = VGE2 = 15V, – – 600 ns td(off) RG = 2.1Ω, Resistive – – 350 ns tf Load Switching Operation – – 300 ns Diode Reverse Recovery Time** trr IE = 300A, diE/dt = -600A/µs – – 160 ns Diode Reverse Recovery Charge** Qrr IE = 300A, diE/dt = -600A/µs – 0.72 Diode Reverse Recovery Time trr IF = 300A, Clamp Diode Part – – Diode Reverse Recovery Charge Qrr – 0.72 diF/dt = -600A/µs – µC 160 ns – µC **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Sep.1998 MITSUBISHI IGBT MODULES CM300E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT – – 0.14 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi – – 0.24 °C/W Thermal Resistance, Junction to Case Rth(j-c) Clamp Diode Part – – 0.24 °C/W Contact Thermal Resistance Rth(c-f) – 0.020 – °C/W Per Module, Thermal Grease Applied OUTPUT CHARACTERISTICS (TYPICAL) 13 VGE = 20V 12 15 400 300 11 200 10 100 9 VCE = 10V Tj = 25°C Tj = 125°C 500 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 500 5 600 14 Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 600 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 400 300 200 100 8 0 2 4 6 8 0 10 8 12 16 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 2 1 0 IC = 300A 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) IC = 600A 200 300 400 500 600 CAPACITANCE VS. VCE (TYPICAL) Tj = 25°C 8 100 COLLECTOR-CURRENT, IC, (AMPERES) 102 Tj = 25°C 6 3 20 103 EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 4 0 0 0 VGE = 15V Tj = 25°C Tj = 125°C 102 VGE = 0V Cies 101 Coes 100 Cres IC = 120A 0 0 4 8 12 16 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 101 0.6 1.0 1.4 1.8 2.2 2.6 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) Sep.1998 MITSUBISHI IGBT MODULES CM300E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 tr VCC = 300V VGE = ±15V RG = 2.1Ω Tj = 125°C 102 Irr 102 101 101 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.14°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 100 103 102 EMITTER CURRENT, IE, (AMPERES) 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) COLLECTOR CURRENT, IC, (AMPERES) 10-3 101 trr 101 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) td(off) td(on) 101 101 di/dt = -600A/µsec Tj = 25°C REVERSE RECOVERY TIME, trr, (ns) SWITCHING TIME, (ns) tf GATE CHARGE, VGE 102 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 103 IC = 300A 15 VCC = 200V VCC = 300V 10 5 0 0 200 400 600 800 GATE CHARGE, QG, (nC) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.24°C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.1998