CM150DU-34KA Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ KA-Series Module 150 Amperes/1700 Volts TC Measured Point A D F T - (4 TYP.) H G2 B E E2 C L J E1 CM G1 C2E1 S - NUTS (3 TYP) E2 Q K P Q G N K K H U C1 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. R M C L G2 E2 Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches A 4.25 108.0 L 0.87 22.0 B 2.44 62.0 M 0.33 8.5 C 1.14 +0.04/-0.02 29.0 +1.0/-0.5 Millimeters N 0.10 2.5 D 3.66±0.01 93.0±0.25 P 0.85 21.5 E 1.88±0.01 48.0±0.25 Q 0.98 25.0 F 0.67 17.0 R 0.11 2.8 G 0.16 4.0 S M6 M6 H 0.24 6.0 T 0.26 Dia. 6.5 Dia. J 0.59 15.0 U 0.02 K 0.55 14.0 0.5 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM150DU-34KA is a 1700V (VCES), 150 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 150 34 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150DU-34KA Dual IGBTMOD™ KA-Series Module 150 Amperes/1700 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM150DU-34KA Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1700 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 150 Amperes ICM 300* Amperes IE 150 Amperes Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) Peak Emitter Current** IEM 300* Amperes Maximum Collector Dissipation (Tc = 25°C) Pc 1100 Watts Mounting Torque, M6 Main Terminal – 40 in-lb Mounting Torque, M6 Mounting – 40 in-lb – 400 Grams Viso 3500 Volts Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 4.0 5.5 7.0 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C – 3.2 4.0 Volts IC = 150A, VGE = 15V, Tj = 125°C – – Volts Total Gate Charge QG VCC = 1000V, IC = 150A, VGE = 15V – 675 – nC Emitter-Collector Voltage* VEC IE = 150A, VGE = 0V, Tj = 25°C – – 4.6 Volts IE = 150A, VGE = 0V, Tj = 125°C – 2.2 – Volts Typ. Max. 3.8 * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics 2 Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Times Fall Time Test Conditions VCE = 10V, VGE = 0V VCC = 1000V, IC = 150A, Min. Units – – 21.0 nf – – 3.6 nf – – – – 1.1 450 nf ns tr VGE1 = VGE2 = 15V, – – 200 ns td(off) RG = 2.1⍀, Resistive – – 550 ns tf Inductive Load – – 800 ns Reverse Recovery Time trr Switching Operation – – 600 ns Reverse Recovery Charge Qrr IE = 150A – 7.7 – µC Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150DU-34KA Dual IGBTMOD™ KA-Series Module 150 Amperes/1700 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module – – 0.11 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module – – 0.18 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.040 – °C/W Rth(j-c')Q Tc Measured Point – – 0.07* °C/W Contact Thermal Resistance Thermal Resistance (Under Chips - IGBT Part) * If you use this value, Rth(f-a) should be measured just under the chips. 250 300 6 11 12 200 10 150 9 100 8 50 VCE = 10V Tj = 25°C Tj = 125°C 250 200 150 100 50 0 0 0 2 4 6 8 10 VGE = 15V Tj = 25°C Tj = 125°C 5 4 3 2 1 0 0 4 8 12 16 0 20 50 100 150 200 250 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) VGE = 0V f = 1MHz Tj = 25°C 6 IC = 300A 4 IC = 150A 2 IC = 60A CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) Tj = 25°C 8 102 101 0 4 8 12 16 GATE-EMITTER VOLTAGE, VGE, (VOLTS) Cies 101 Coes 100 Cres 100 0 300 102 103 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 14 Tj = 25oC 15 VGE = 20V COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 300 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 20 1 2 3 4 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150DU-34KA Dual IGBTMOD™ KA-Series Module 150 Amperes/1700 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) td(on) 102 VCC = 1000V VGE = ±15V RG = 2.1 Ω Tj = 125°C Inductive Load tr 101 101 102 101 101 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 100 10-2 10-1 100 10-1 10-1 10-2 10-2 10-5 TIME, (s) 4 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.11°C/W 10-3 10-4 102 101 103 102 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.18°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 IC = 150A 16 VCC = 800V 12 VCC = 1000V 8 4 0 0 200 400 600 GATE CHARGE, QG, (nC) EMITTER CURRENT, IE, (AMPERES) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) COLLECTOR CURRENT, IC, (AMPERES) 10-3 101 trr Irr 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) td(off) 103 VCC = 1000V VGE = ±15V RG = 2.1 Ω Tj = 25°C Inductive Load REVERSE RECOVERY TIME, trr, (ns) SWITCHING TIME, (ns) tf GATE CHARGE, VGE 103 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 104 10-3 10-3 800 1000