CM400DU-12NFH Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 High Frequency Dual IGBTMOD™ 400 Amperes/600 Volts A D F T - (4 TYP.) H G2 B E E2 C L J E1 CM G1 C2E1 S - NUTS (3 TYP) E2 Q K Q K H U C1 P G N K Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking base plate, offering simplified system assembly and thermal management. R M C L G2 E2 Features: □ Low Drive Power □ Low VCE(sat) □ High Frequency Switching (50kHz to 60kHz) □ Isolated Base Plate for Easy Heat Sinking C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches A 4.25 108.0 L 0.87 22.0 B 2.44 62.0 M 0.33 8.5 C 1.14 +0.04/-0.02 29.0 +1.0/-0.5 Millimeters N 0.10 2.5 D 3.66±0.01 93.0±0.25 P 0.85 21.5 E 1.88±0.01 48.0±0.25 Q 0.98 25.0 F 0.67 17.0 R 0.11 2.8 G 0.16 4.0 S M6 M6 H 0.24 6.0 T M6.5 M6.5 J 0.59 15.0 U 0.02 0.5 K 0.55 14.0 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM400DU-12NFH is a 600V (VCES), 400 Ampere High Power Dual Module. Type Current Rating Amperes VCES Volts (x 50) CM 400 12 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DU-12NFH High Frequency Dual IGBTMOD™ 400 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM400DU-12NFH Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 400 Amperes ICM 800* Amperes IE 400 Amperes Peak Emitter Current** IEM 800* Amperes Maximum Collector Dissipation (Tj < 150°C) Pc 960 Watts Maximum Collector Dissipation (Tj < 150°C) Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) Pc' 1640 Watts Mounting Torque, M6 Main Terminal – 40 in-lb Mounting Torque, M6 Mounting – 40 in-lb Weight – 400 Grams Viso 2500 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 40mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 400A, VGE = 15V, Tj = 25°C – 2.0 2.7 Volts IC = 400A, VGE = 15V, Tj = 125°C – – Volts Total Gate Charge QG VCC = 300V, IC = 400A, VGE = 15V – 2480 – nC Emitter-Collector Voltage* VEC IE = 400A, VGE = 0V – – 2.6 Min. Typ. Max. 1.95 Volts * Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Times Fall Time Test Conditions VCE = 10V, VGE = 0V VCC = 300V, IC = 400A, – – – – – – 110 nF 7.2 nF 4.0 nF 400 ns tr VGE1 = VGE2 = 15V, – – 200 ns td(off) RG = 3.1⍀, Inductive – – 700 ns tf Load Switching Operation – – 150 ns Diode Reverse Recovery Time* trr IE = 400A – – 200 ns Diode Reverse Recovery Charge* Qrr – 7.7 – µC * Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 – – Units Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DU-12NFH High Frequency Dual IGBTMOD™ 400 Amperes/600 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol External Gate Resistance Test Conditions Min. RG 1.6 Typ. Max. — 16 Units Ω °C/W Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module – – Thermal Resistance, Junction to Case Rth(j-c')Q TC measured Point is just — — 0.13 Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module – – 0.18 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.04 – °C/W 0.076* °C/W Under the Chips Contact Thermal Resistance * If you use this value, Rth(f-a) should be measured just under the chips. COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 700 3.0 10 9.5 9 600 8.5 500 8 400 300 7.5 200 7 100 Tj = 25oC 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 4 3 IC = 800A IC = 400A 2 IC = 160A 1 200 400 600 800 6 8 10 12 14 16 18 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) SWITCHING LOSS CHARACTERISTICS (TYPICAL) 103 103 CAPACITANCE, Cies, Coes, Cres, (nF) Tj = 25°C 102 101 0 Tj = 25°C 0 0 5 0.5 1.0 1.5 2.0 2.5 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) SWITCHING LOSS, ESW( on), ESW( off), (mJ/PULSE) 0 EMITTER CURRENT, IE, (AMPERES) 5 VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 11 VGE = 20V 15 13 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 800 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VGE = 0V Cies 102 101 Coes 100 10-1 Cres 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 101 20 VEC = 300V VGE = ±15V RG = 3.1 Tj = 125°C ESW(on) ESW(off) 100 10-1 101 102 103 COLLECTOR-CURRENT, IC, (AMPERES) 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DU-12NFH High Frequency Dual IGBTMOD™ 400 Amperes/600 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 103 103 REVERSE RECOVERY TIME, trr, (ns) td(off) SWITCHING TIME, (ns) td(on) tf 102 tr VCC = 300V VGE = ±15V RG = 3.1 Ω Tj = 125°C 101 101 102 Irr trr 102 VCC = 300V VGE = ±15V RG = 3.1 Ω Tj = 125°C 101 101 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 100 10-3 10-2 10-1 100 10-2 10-2 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.13°C/W 10-3 10-5 TIME, (s) 4 101 10-1 10-1 10-4 101 103 EMITTER CURRENT, IE, (AMPERES) 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) COLLECTOR CURRENT, IC, (AMPERES) 102 102 10-3 10-2 10-1 100 10-2 101 10-1 10-1 10-2 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.18°C/W 10-3 10-5 TIME, (s) 10-4 IC = 400A 16 VCC = 200V VCC = 300V 12 8 4 0 0 500 1000 1500 2000 2500 3000 3500 GATE CHARGE, QG, (nC) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 100 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 REVERSE RECOVERY CURRENT, Irr, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 10-3 10-3