CM50TU-34KA Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six IGBTMOD™ KA-Series Module 50 Amperes/1700 Volts S - NUTS (5 TYP) J T - (4 TYP.) K K CM TC Measuring Point R N P P GUP EUP L GV P E V P N L N L B E Q M GUN EUN GV N E V N U J GWN E W N R W V L TC Measuring Point GWP EWP Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. J N L N L V D A W - THICK x X - WIDE TAB (12 PLACES) H C F P GUP EUP GVP EVP GWP EWP U V W GUN EUN N GVN EVN GWN EWN G Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches A 4.21 107.0 M 0.57 4.02 102.0 N 0.85 21.7 P 0.67 17.0 48.5 B C 1.14 +0.04/-0.02 29.0 +1.0/-0.5 Millimeters 14.4 D 3.54±0.01 90.0±0.25 Q 1.91 E 3.15±0.01 80.0±0.25 R 0.15 F 0.16 4.0 S M5 M5 G 1.02 26.0 T 0.26 Dia. 6.5 Dia. 3.75 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM50TU-34KA is a 1700V (VCES), 50 Ampere SixIGBT IGBTMOD™ Power Module. H 0.31 8.1 V 0.03 0.8 J 0.91 23.0 W 0.02 0.5 Type Current Rating Amperes VCES Volts (x 50) K 0.47 12.0 X 0.110 2.79 CM 50 34 L 0.43 11.0 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TU-34KA Six IGBTMOD™ KA-Series Module 50 Amperes/1700 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM50TU-34KA Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1700 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 50 Amperes ICM 100* Amperes IE 50 Amperes Peak Emitter Current** IEM 100* Amperes Maximum Collector Dissipation (Tc = 25°C) Pc 600 Watts Mounting Torque, M5 Main Terminal – 31 in-lb Mounting Torque, M5 Mounting – 31 in-lb – 680 Grams Viso 3500 Volts Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Min. Typ. Max. Collector-Cutoff Current Symbol ICES VCE = VCES, VGE = 0V Test Conditions – – 1 Units mA Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 5mA, VCE = 10V 4.0 5.5 7.0 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V, Tj = 25°C – 3.2 4.0 Volts IC = 50A, VGE = 15V, Tj = 125°C – – Volts Total Gate Charge QG VCC = 1000V, IC = 50A, VGE = 15V – – nC Emitter-Collector Voltage* VEC IE = 50A, VGE = 0V, Tj = 25°C – – 4.6 Volts IE = 50A, VGE = 0V, Tj = 125°C – 2.2 – Volts Min. Typ. Max. Units – – 7.0 nf – – 1.2 nf – – 0.38 nf 3.8 225 * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics 2 Symbol Test Conditions Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) VCC = 1000V, IC = 50A, – – 100 ns Load Rise Time tr VGE1 = VGE2 = 15V, – – 100 ns Switch Turn-off Delay Time td(off) RG = 6.3⍀, Resistive – – 400 ns Times Fall Time tf Inductive Load – – 800 ns Diode Reverse Recovery Time trr Switching Operation – – 200 ns Diode Reverse Recovery Charge Qrr IE = 50A – 3.9 – µC VCE = 10V, VGE = 0V Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TU-34KA Six IGBTMOD™ KA -Series Module 50 Amperes/1700 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/6 Module – – 0.21 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/6 Module – – 0.47 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.09 – °C/W Rth(j-c')Q Tc Measured Point – – 0.17* °C/W Contact Thermal Resistance Thermal Resistance (Under Chips - IGBT Part) * If you use this value, Rth(f-a) should be measured just under the chips. OUTPUT CHARACTERISTICS (TYPICAL) 14 15 11 VGE = 20V 80 100 10 60 40 9 20 8 VCE = 10V Tj = 25°C Tj = 125°C 80 60 40 20 0 0 0 2 4 6 8 10 VGE = 15V Tj = 25°C Tj = 125°C 5 4 3 2 1 0 0 5 10 15 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 0 20 20 40 60 CAPACITANCE VS. VCE (TYPICAL) IC = 100A 4 IC = 50A 2 IC = 20A Cies CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) Tj = 25°C 6 100 101 Tj = 25°C 8 80 COLLECTOR-CURRENT, IC, (AMPERES) 103 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 6 12 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 100 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 102 100 Coes Cres 10-1 VGE = 0V 101 0 0 5 10 15 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 1 2 3 4 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 10-2 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TU-34KA Six IGBTMOD™ KA-Series Module 50 Amperes/1700 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) tf td(off) 102 td(on) 101 tr 100 100 101 102 VCC = 1000V VGE = ±15V RG = 6.3 Ω Tj = 125°C INDUCTIVE LOAD 102 101 100 100 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.21°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 4 101 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) 100 10-1 100 102 101 EMITTER CURRENT, IE, (AMPERES) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 101 Irr COLLECTOR CURRENT, IC, (AMPERES) 10-3 101 trr 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.47°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 IC = 50A 16 VCC = 800V 12 VCC = 1000V 8 4 0 0 100 200 GATE CHARGE, QG, (nC) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY TIME, trr, (ns) SWITCHING TIME, (ns) 103 VCC = 1000V VGE = ±15V RG = 6.3 Ω Tj = 125°C INDUCTIVE LOAD GATE CHARGE, VGE 102 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 104 10-3 10-3 300