MITSUBISHI IGBT MODULES CM600HU-12F HIGH POWER SWITCHING USE CM600HU-12F ¡IC ................................................................... 600A ¡VCES ............................................................ 600V ¡Insulated Type ¡1-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 107 93±0.25 2–M4NUTS C 24.35 21.15 E 8.5 6.5 17.2 E 20.5 8.5 12.55 29 19.1 26 G 6.5 10 9.5 62 48±0.25 13.5 4–φ6.5 MOUNTING HOLES CM 18 Tc measured point 2–M8NUTS 4 C LABEL 34+1 –0.5 +1 26 –0.5 E E G RTC CIRCUIT DIAGRAM Aug. 1999 MITSUBISHI IGBT MODULES CM600HU-12F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Torque strength — Weight Conditions G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Ratings 600 ±20 600 1200 600 1200 1420 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 450 (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M8 Mounting holes M6 G(E) Terminal M4 Typical value Unit V V A A W °C °C V N•m N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C) Parameter Symbol Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 60mA, VCE = 10V 5 6 7 V IGES Gate leakage current Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Rth(c-f) Rth(j-c’)Q RG Contact thermal resistance — — — — — — — — — — — — — — — — — — 3.1 — 1.6 1.6 — — — 3720 — — — — — 11.7 — — — 0.02 — — 80 2.2 — 160 11 6.0 — 600 400 900 250 300 — 2.6 0.088 0.12 — µA VCE(sat) VGE = VCES, VCE = 0V Tj = 25°C IC = 600A, VGE = 15V Tj = 125°C Thermal resistance*1 Thermal resistance External gate resistance VCE = 10V VGE = 0V VCC = 300V, I C = 600A, VGE = 15V VCC = 300V, IC = 600A VGE1 = VGE2 = 15V RG = 3.1Ω, Inductive load switching operation IE = 600A IE = 600A, VGE = 0V IGBT part FWDi part Case to fin, Thermal compoundapplied*2 Tc measured point is just under the chips 0.048✽3 31 mA V nF nC ns ns µC V °C/W Ω Note 1. IE, VEC, t rr, Q rr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Aug. 1999 MITSUBISHI IGBT MODULES CM600HU-12F HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 1000 VGE=20V COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 15 11 10 Tj=25°C 9.5 800 9 600 8.5 400 8 200 7.5 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 0 0 0.5 1 1.5 2 2.5 3 3.5 VGE = 15V 2.5 2 1.5 1 Tj = 25°C Tj = 125°C 0.5 0 400 800 1200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 103 Tj = 25°C 7 5 4 3 IC = 1200A 2 IC = 600A IC = 240A 1 0 6 8 10 12 14 16 18 102 7 5 3 2 101 7 5 3 2 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 td(off) Cies 102 7 5 3 2 101 7 5 VGE = 0V Cres Coes 100 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) SWITCHING TIMES (ns) 7 5 3 2 3 2 Tj = 25°C 3 2 100 20 103 CAPACITANCE Cies, Coes, Cres (nF) 3 0 4 EMITTER CURRENT IE (A) COLLECTOR CURRENT IC (A) 1200 td(on) 3 2 tf 102 7 5 tr 3 2 101 7 5 3 2 Conditions: VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C 100 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Aug. 1999 MITSUBISHI IGBT MODULES CM600HU-12F HIGH POWER SWITCHING USE 103 7 5 3 2 102 1 trr 7 5 Irr Conditions: VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 25°C 3 2 101 1 10 2 3 5 7 102 2 3 5 7 103 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.088°C/W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.12°C/W 100 7 5 3 2 3 2 10–1 10–1 10–2 10–2 7 5 3 2 7 5 3 2 10–3 7 5 3 2 7 5 3 2 Single Pulse TC = 25°C 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TMIE (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 600A 18 16 VCC = 200V 14 VCC = 300V 12 10 8 6 4 2 0 0 1000 2000 3000 4000 5000 GATE CHARGE QG (nC) Aug. 1999