MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET ARY FS10UMA-5A FS10UMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS10UMA-5A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 ➃ 1.0 3.8MAX. 0.8 2.54 2.54 0.5 2.6 4.5MAX. 12.5MIN. φ 3.6 ➀ ➁ ➂ ➁➃ ● 10V DRIVE ● VDSS ............................................................................... 250V ● rDS (ON) (MAX) .............................................................. 0.52Ω ● ID ......................................................................................... 10A ➀ GATE ➁ DRAIN ➂ SOURCE ➃ DRAIN ➀ ➂ TO-220 APPLICATION C S Switch for CRT Display monitor MAXIMUM RATINGS (Tc = 25°C) Ratings Unit VDSS Symbol Drain-source voltage VGS = 0V 250 V VGSS ID Gate-source voltage Drain current VDS = 0V ±20 10 V A IDM IDA Drain current (Pulsed) Avalanche current (Pulsed) 30 10 A A PD Tch Maximum power dissipation Channel temperature 65 –55 ~ +150 W °C –55 ~ +150 °C 2.0 g Tstg — Parameter Conditions L = 200µH Storage temperature Weight Typical value Jan. 2000 MITSUBISHI Nch POWER MOSFET ARY FS10UMA-5A IMIN PREL . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance VDS (ON) y fs Drain-source on-state voltage Forward transfer admittance Ciss Coss Input capacitance Output capacitance Crss td (on) Reverse transfer capacitance Turn-on delay time tr td (off) Rise time Turn-off delay time tf Fall time VSD Rth (ch-c) Source-drain voltage Thermal resistance Limits Test conditions Unit Min. Typ. Max. 250 — — — — ±0.1 V µA — 2.0 — 3.0 1 4.0 mA V — 0.40 0.52 Ω I D = 5A, VDS = 10V — — 2.00 9.0 2.60 — V S V DS = 25V, VGS = 0V, f = 1MHz — — 950 90 — — pF pF — — 25 20 — — pF ns — — 25 150 — — ns ns I D = 1mA, V GS = 0V V GS = ±20V, VDS = 0V V DS = 250V, V GS = 0V I D = 1mA, V DS = 10V I D = 5A, VGS = 10V I D = 5A, VGS = 10V V DD = 150V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω I S = 5A, VGS = 0V Channel to case — 40 — ns — — 1.5 — 2.0 1.92 V °C/W PERFORMANCE CURVES DRAIN CURRENT ID (A) 80 60 40 20 0 3 2 tw = 10µs 101 7 5 100µs 3 2 1ms 100 7 5 3 2 DC TC = 25°C Single Pulse 10–1 0 20 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 7 5 50 100 150 7 200 5 7 101 2 3 2 3 5 7 102 2 3 5 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 7V 6V 16 10 TC = 25°C Pulse Test 10V 12 5V 8 PD = 65W 4 VGS = 20V 5V 6V 10V DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 100 8 7V PD = 65W 6 4.5V 4 TC = 25°C Pulse Test 2 4V 4V 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) Jan. 2000 MITSUBISHI Nch POWER MOSFET ARY FS10UMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.0 TC = 25°C Pulse Test 16 12 ID = 20A 8 4 10A DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 20 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25°C Pulse Test 0.8 0.6 VGS = 10V 0.4 20V 0.2 5A 0 0 4 8 12 16 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102 20 12 8 4 0 CAPACITANCE Ciss, Coss, Crss (pF) FORWARD TRANSFER ADMITTANCE yfs (S) 16 TC = 25°C VDS = 10V Pulse Test 0 4 8 12 16 3 2 7 5 100 7 5 10–1 20 VDS = 10V Pulse Test 7 100 2 3 5 7 101 2 3 5 7 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 5 7 5 3 3 2 Ciss 103 7 5 3 2 102 Coss 7 5 101 75°C 125°C 3 2 104 3 2 TC = 25°C 101 3 2 TCh = 25°C f = 1MHZ VGS = 0V Crss 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN CURRENT ID (A) 7 5 2 td(off) 102 7 5 tf tr 3 td(on) 2 101 7 5 TCh = 25°C VDD = 150V VGS = 10V RGEN = RGS = 50Ω 7 100 2 3 5 7 101 2 3 5 7 DRAIN CURRENT ID (A) Jan. 2000 MITSUBISHI Nch POWER MOSFET ARY FS10UMA-5A IMIN PREL . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) VDS = 50V 100V 12 8 150V 4 0 20 40 60 80 TC = 25°C 75°C 24 125°C 16 8 0 1.6 2.4 3.2 4.0 ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 3 2 100 7 5 3 2 –50 0 50 100 3.0 2.0 1.0 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 CHANNEL TEMPERATURE Tch (°C) 0.4 0.8 SOURCE-DRAIN VOLTAGE VSD (V) VGS = 10V 7 ID = 1/2ID 5 Pulse Test 1.4 0 GATE CHARGE Qg (nC) 101 10–1 VGS = 0V Pulse Test 32 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 40 TCh = 25°C ID = 10A 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 D = 1.0 2 0.5 0.1 0.05 PDM 100 7 0.2 5 Single Pulse tw T 3 2 0.01 D= tw T 0.02 10–1 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan. 2000