MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54539P 6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54539P six-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. PIN CONFIGURATION (TOP VIEW) NC→ 1 16 →VCC IN1→ 2 15 →O1 IN2→ 3 14 →O2 IN3→ 4 13 →O3 IN4→ 5 12 →O4 IN5→ 6 11 →O5 IN6→ 7 10 →O6 GND 9 →COM COMMON INPUTS FEATURES ● Medium breakdown voltage (BV CEO ≥ 20V) ● High-current driving (Ic(max) = 700mA) ● With output clamping diodes ● Wide operating temperature range (Ta = –20 to +75°C) 8 OUTPUTS Outline 16P4(P) NC : No connection APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and drives of thermal printer CIRCUIT SCHEMATIC 200 VCC COM 2k OUTPUT INPUT FUNCTION The M54539P have six circuits consisting of NPN transistors. Resistance of 2kΩ is connected to the inputs. The output transistor emitters are connected to the GND pin (pin 8). A spick-killer clamping diode is provided between each collector and COM pin (pin 9), V CC is connected to pin 16. The collector current is 700 mA maximum. Collector-emitter supply voltage is 20V maximum. ABSOLUTE MAXIMUM RATINGS GND 20k 2k The six circuits share the VCC, COM and GND. The diodes shown by broken line are parasite diodes and must not be used. Unit : Ω (Unless otherwise noted, Ta = –20 ~ +75 °C) Symbol VCC Supply voltage Parameter Conditions Ratings VCEO IC Collector-emitter voltage Collector current VI VR Input voltage Clamping diode reverse voltage IF Clamping diode forward current Pd Power dissipation 1.47 W Topr Operating temperature –20 ~ +75 °C Tstg Storage temperature –55 ~ +125 °C 10 Output, H Current per circuit output, L –0.5 ~ +20 700 –0.5 ~ +10 20 Pulse Width ≤ 35ms, Duty Cycle ≤ 5% 700 350 Ta = 25°C, when mounted on board Unit V V mA V V mA Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54539P 6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol VCC VO IC VIH VIL (Unless otherwise noted, Ta = –20 ~ +75°C) Parameter Supply voltage Output voltage VCC = 6.5V, The three outputs conducting simultaneously Collector current Percent duty cycle less than 20% VCC = 6.5V, The three outputs per channel conducting simultaneously Percent duty cycle less than 90% “H” input voltage IC ≤ 450mA max Unit 3 5 7 V 0 — 20 V 0 — 700 0 — 200 3 — 6 0 — 0.3 mA “L” input voltage ELECTRICAL CHARACTERISTICS Limits typ min V V (Unless otherwise noted, Ta = –20 ~ +75°C) Symbol Parameter V (BR) CEO Collector-emitter breakdown voltage VCE (sat) Limits Test conditions Unit min 20 typ+ — max — VI = 3V, VCC = 5V, IC = 450mA Collector-emitter saturation voltage VI = 3V, VCC = 5V, IC = 200mA — — 0.46 0.2 0.8 0.45 II Input current IR VF ICC Clamping diode reverse current VCC = 7V, VI = 3.2V VR = 20V — — 0.75 — 1.4 100 Clamping diode forward voltage Supply current IF = 350mA VCC = 7V, VI = 3.2V (Per operating one circuit) — 1.5 2.7 µA V h FE DC amplification factor VCE = 4V, VCC = 6V, I C = 300mA, Ta = 25°C 27.5 8000 50 — mA — VCC = 7V, ICEO = 100µA — 3000 V V mA + : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol ton toff Parameter Test conditions Turn-on time Turn-off time CL = 15pF (note 1) max — 16 — ns — 1000 — ns Unit TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT Limits typ min VO VCC Measured device 50% 50% INPUT RL OPEN OUTPUT PG OUTPUT 50Ω CL 50% ton 50% toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω VP = 3VP-P (2) Input-output conditions : RL = 22.5Ω, VO = 10V, VCC = 5V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54539P 6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 800 Collector current Ic (mA) Power dissipation Pd (W) 2.0 1.5 1.0 0.5 0 25 0 50 75 600 400 200 0 100 VI = 3V VCC = 5V Ta = 75°C Ta = 25°C Ta = –20°C Ambient temperature Ta (°C) 0 0.2 0.4 0.6 0.8 1.0 Output saturation voltage VCE (sat) (V) Duty-Cycle-Collector Characteristics Duty-Cycle-Collector Characteristics 800 800 600 2 400 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneouslyoperated circuit. •VCC = 6.5V •Ta = 25°C 200 0 0 20 3 6 5 40 4 60 80 Collector current Ic (mA) Collector current Ic (mA) 1 400 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneouslyoperated circuit. •VCC = 6.5V •Ta = 75°C 200 0 100 1 600 0 20 40 Duty cycle (%) 60 80 3 100 800 7 5 Collector current Ic (mA) DC amplification factor hFE 4 Grounded Emitter Transfer Characteristics 105 VCC = 6V VCE = 4V Ta = 75°C Ta = 25°C Ta = –20°C 104 7 5 3 103 1 10 6 5 Duty cycle (%) DC Amplification Factor Collector Current Characteristics 3 2 3 5 7 102 3 Collector current Ic (mA) 5 7 103 VCC = 6V VCE = 4V 600 Ta = 75°C Ta = 25°C Ta = –20°C 400 200 0 0 0.5 1.0 1.5 2.0 2.5 Input voltage VI (V) Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54539P 6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE Input Characteristics Supply Current Characteristics 5 50 VCC = 7V Supply current Icc (mA) Input current II (mA) VI = 3.2V Ta = 75°C Ta = 25°C Ta = –20°C 4 3 2 1 0 0 2 4 6 8 10 Input voltage VI (V) Ta = 75°C Ta = 25°C Ta = –20°C 40 30 20 10 0 0 2 4 6 8 10 Supply voltage VCC (V) Clamping Diode Characteristics Forward bias current IF (mA) 800 Ta = 75°C Ta = 25°C Ta = –20°C 600 400 200 0 0 0.5 1.0 1.5 2.0 2.5 Forward bias voltage VF (V) Aug. 1999