MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54531WP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54531WP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION FEATURES ●High breakdown voltage (BVCEO≧40V) ●High-current driving (Ic(max) = 400mA) ●With clamping diodes ●Driving available with PMOS IC output ●Wide input voltage range (VI = –40 to +40V) INPUT IN1→ 1 16 →O1 IN2→ 2 15 →O2 IN3→ 3 14 →O3 IN4→ 4 13 →O4 IN5→ 5 12 →O5 IN6→ 6 11 →O6 IN7→ 7 10 →O7 GND 9 8 OUTPUT →COM COMMON Package type 16P4X APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces CIRCUIT DIAGRAM COM FUNCTION The M54531WP each have seven circuits consisting of NPN Darlington transistors. A serial circuit including a diode and resistance of 20kΩ is provided between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 400mA maximum. Collector-emitter supply voltage is 40V maximum. OUTPUT 20K INPUT 20K 2K GND The seven circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit:Ω ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ～ +75℃) Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Conditions Output, H Current per circuit output, L Ta = 25℃, when mounted on board 1/4 Ratings Unit –0.5 ～ +40 400 –40 ～ +40 400 40 1.47 –20 ～ +75 –55 ～ +125 V mA V mA V W ℃ ℃ '09-03 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54531WP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ～ +75℃) Symbol Parameter VO Output voltage Collector current IC (Current per 1 circuit when 7 circuits are coming on simultaneously) VIH “H” input voltage VIL “L” input voltage min Limits typ max 0 － 40 Duty Cycle no more than 8% 0 － 400 Duty Cycle no more than 30% 0 － 200 IC ≦ 400mA IC ≦ 200mA 9 6 0 － － － Unit V mA 35 V 1 V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ～ +75℃) Symbol Parameter Test conditions V(BR)CEO Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation voltage II Input current IIR VF IR hFE Input reverse current Clamping diode forward voltage Clamping diode reverse current DC amplification factor ICEO = 100μA VI = 9V, IC = 400mA VI = 6V, IC = 200mA VI = 18V VI = 35V VI = –35V IF = 400mA VR = 40V VCE = 4V, IC = 300mA, Ta = 25℃ min Limits typ * max 40 — — — — — — — 1000 — 1.3 1.0 1.1 2.0 — 1.4 — 3500 — 2.4 1.6 1.8 3.8 –20 2.4 100 — Unit V V mA μA V μA — * : The typical values are those measured under ambient temperature (Ta) of 25℃. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25℃) Symbol Parameter ton Turn-on time toff Turn-off time Test conditions CL = 15pF（note 1） min Limits typ max — — 30 680 — — Unit ｎｓ ｎｓ TIMING DIAGRAM NOTE 1 TEST CIRCUIT VO IN 50% Measured device RL 50% INPUT OPEN OUTP PG 50Ω OUTPUT CL 50% ｔon (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10ms, tr = 6ns, tf = 6ns, ZO = 50Ω ,VP = 9VP-P (2) Input-output conditions : RL = 25Ω, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes 2/4 50% ｔoff MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54531WP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 2.0 400 M54531WP 1.5 Collector current IC(mA) Power dissipation Pd(W) VI=6V 1.0 0.5 300 200 Ta=75℃ 100 Ta=25℃ Ta=-20℃ 0 0 25 50 75 0 100 0 Ambient temperature Ta(℃) Duty-Cycle-Collector Characteristics 1.2 1.6 Duty-Cycle-Collector Characteristics 500 400 400 ① ② 300 ③ ④ ⑤ ⑥ ⑦ 200 •The collector current values represent the current per circuit. 100 •Repeated frequency ≧ 10Hz Collector current IC(mA) Collector current IC(mA) 0.8 Output saturation voltage VCE(sat)(V) 500 0 0.4 •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25℃ 0 20 60 40 80 ① 300 ② 200 •The collector current values represent the current per circuit. 100 •Repeated frequency ≧ 10Hz 0 100 •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75℃ 0 20 60 40 Duty cycle (%) 80 100 Duty cycle (%) DC Amplification Factor Collector Current Characteristics Grounded Emitter Transfer Characteristics 10 4 7 ③ ④ ⑤ ⑥ ⑦ 400 VCE=4V VCE=4V Collector current IC(mA) DC amplification factor hFE 5 Ta=75℃ 3 2 Ta=25℃ Ta=-20℃ 10 3 7 5 3 300 Ta=75℃ Ta=25℃ 200 Ta=-20℃ 100 2 10 2 1 10 2 3 5 7 10 2 2 3 5 7 10 3 Collector current Ic(mA) 0 0 1 2 Input voltage VI(V) 3/4 3 4 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54531WP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Input Characteristics Clamping Diode Characteristics 400 Forward bias current IF(mA) Input current II(mA) 2.0 1.5 Ta=-20℃ 1.0 Ta=25℃ Ta=75℃ 0.5 300 200 Ta=75℃ 100 Ta=25℃ Ta=-20℃ 0 0 5 10 15 20 0 25 0 0.5 1.0 1.5 Forward bias voltage VF(V) Input voltage VI(V) 4/4 2.0