MITSUBISHI M63800FP

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63800FP
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63800FP is a seven-circuit output-sourcing Darlington
transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs highcurrent driving with extremely low input-current supply.
PIN CONFIGURATION







INPUT 







FEATURES
Á High breakdown voltage (BV CEO ≥ 50V)
Á High-current driving (Io(max) = –500mA)
Á With output clamping diodes
Á Driving available with CMOS IC output of 6-16V or with TTL output
Á Wide operating temperature range (Ta = –20 to +75°C)
Á Output current-sourcing type
IN1→ 1
16 →O1 
IN2→ 2
15 →O2 

IN3→ 3
14 →O3 
IN4→ 4
13 →O4  OUTPUT
IN5→ 5
12 →O5 
IN6→ 6
11 →O6 
IN7→ 7
10 →O7 
VS
8







9
GND
Package type 16P2N-A
CIRCUIT DIAGRAM
APPLICATION
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors
VS
20K
INPUT
3K
7.2K
1.5K
3K
OUTPUT
FUNCTION
The M63800FP has seven circuits, which are made of input
inverters and current-sourcing outputs. The outputs are
made of PNP transistors and NPN Darlington transistors.
The PNP transistor base current is constant. A spike-killer
clamping diode is provided between each output pin and
GND. V S (pin 8) and GND (pin 9) are used commonly among
the eight circuits.
The input has resistance of 3kΩ, and a maximum of 10V can
be applied. The output current is 500mA maximum. Supply
voltage V S is 50V maximum.
The M63800FP is enclosed in a molded small flat package,
enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VS
#
Parameter
Collector-emitter voltage
Supply voltage
Input voltage
Output current
IF
Clamping diode forward current
Topr
Tstg
#
The seven circuits share the VS and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
(Unless otherwise noted, Ta = –20 ~ +75 °C)
VI
IO
VR
Pd
GND
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, L
Current per circuit output, H
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +50
50
Unit
V
V
V
–0.5 ~ +10
–500
mA
–500
50
mA
V
1.00
W
°C
–20 ~ +75
–55 ~ +125
°C
# : Unused I/O pins must be connected to GND.
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63800FP
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Supply voltage
Output current
(Current per 1 circuit when 7 circuits
are coming on simultaneously)
VS
IO
(Unless otherwise noted, Ta = –20 ~ +75°C)
min
Limits
typ
max
0
—
50
Duty Cycle
no more than 7%
0
—
–350
Duty Cycle
no more than 40%
0
—
–100
5
—
10
V
0.2
V
“H” input voltage
2.4
VIL
“L” input voltage
0
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted, Ta = –20 ~ +75°C)
Parameter
min
—
typ+
—
max
100
—
1.6
2.4
VI = 3V
—
—
1.45
0.6
2.0
1.0
VI = 10V
VS = 50V, VI = 3V (all input)
—
—
2.9
5.6
5.0
15.0
—
—
–1.2
—
–2.4
100
Supply leak current
VCE (sat)
VS = 10V, VI = 2.4V, IO = –350mA
Collector-emitter saturation voltage
VS = 10V, VI = 2.4V, IO = –100mA
II
Input current
IS
VF
Supply current
#
Limits
Test conditions
IS (leak) #
IR
V
mA
VIH
Symbol
Unit
VS = 50V, VI = 0.2V
Clamping diode forward voltage IF = –350mA
Clamping diode reverse current VR = 50V
Unit
µA
V
mA
mA
V
µA
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
# : Unused I/O pins must be connected to GND.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
Test conditions
CL = 15pF (note 1)
NOTE 1 TEST CIRCUIT
INPUT
Limits
typ
max
—
100
—
ns
—
4800
—
ns
min
Unit
TIMING DIAGRAM
VS
50%
Measured device
50%
INPUT
OUTPUT
PG
50Ω
RL
CL
50%
50%
OUTPUT
ton
toff
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω
VI = 0 to 2.4V
(2) Input-output conditions : RL = 30Ω, VS = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63800FP
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Output Saturation Voltage
Output Current Characteristics
Thermal Derating Factor Characteristics
–500
Output current IO (mA)
Power dissipation Pd (W)
2.0
1.5
1.0
0.5
0
0
25
50
75
–300
–200
–100
0
100
Duty-Cycle-Output Current Characteristics
–400
➀
–300
➁
–200
➂
➃
➄
➅
➆
•The output current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
0
20
40
60
80
2.0
2.5
–300
➀
–200
–100
0
100
➁
➂
•The output current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
0
20
40
60
•Ta = 75°C
80
➃
➄
➅
➆
100
Duty cycle (%)
Grounded Emitter Transfer Characteristics
Clamping Diode Characteristics
–500
500
VS = 20V
VS-VO = 4V
Ta = 75°C
Ta = 25°C
Ta = –20°C
–400
Forward bias current IF (mA)
Output current IO (mA)
1.5
–400
Duty cycle (%)
–300
–200
–100
0
1.0
–500
Output current IO (mA)
Output current IO (mA)
0.5
Duty-Cycle-Output Current Characteristics
–500
0
0
Output saturation voltage VCE (sat) (V)
Ambient temperature Ta (°C)
–100
VS = 10V
VI = 2.4V
Ta = 75°C
Ta = 25°C
Ta = –20°C
–400
0
0.2
0.4
0.6
Input voltage VI (V)
0.8
1.0
400
Ta = 75°C
Ta = 25°C
Ta = –20°C
300
200
100
0
0
0.5
1.0
1.5
2.0
Forward bias voltage VF (V)
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63800FP
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Input Characteristics
Input Characteristics
1.0
5
VS = 20V
Ta = 75°C
Ta = 25°C
Ta = –20°C
0.6
0.4
0.2
0
VS = 20V
Ta = 75°C
Ta = 25°C
Ta = –20°C
4
Input current II (mA)
Input current II (mA)
0.8
3
2
1
0
1
2
3
Input voltage VI (V)
4
5
0
0
2
4
6
8
10
Input voltage VI (V)
Aug. 1999
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.