(Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM DESCRIPTION The M5M467405/465405BJ,BTP is organized 16777216-word by 4-bit, M5M467805/465805BJ,BTP is organized 8388608-word by 8-bit, and M5M465165BJ,BTP is organized 4194304-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and are suitable for large-capacity memory systems with high speed and low power dissipation. The use of double-layer aluminum process combined with CMOS technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. FEATURES Address Power RAS OE CAS Cycle access access access access dissipatime tion time time time time (max.ns) (max.ns) (max.ns) (max.ns) (min.ns) (typ.mW) Type name M5M467405BXX-5,5S M5M467805BXX-5,5S 50 13 25 13 84 300 M5M467405BXX-6,6S M5M467805BXX-6,6S 60 15 30 15 104 250 M5M465405BXX-5,5S M5M465805BXX-5,5S 50 13 25 13 84 390 M5M465405BXX-6,6S M5M465805BXX-6,6S 60 15 30 15 104 325 Type name Power Address RAS CAS OE Cycle dissipaaccess access access access time time tion time time time (max.ns) (max.ns) (max.ns) (max.ns) (min.ns) (typ.mW) M5M465165BXX-5,5S 50 13 25 13 84 420 M5M465165BXX-6,6S 60 15 30 15 104 390 XX=J,TP Standard 32 pin SOJ, 32 pin TSOP (M5M467405Bxx/M5M465405Bxx/M5M467805Bxx/M5M465805Bxx) Standard 50 pin SOJ, 50 pin TSOP (M5M465165Bxx) Single 3.3 ± 0.3V supply Low stand-by power dissipation 1.8mW (Max) LVCMOS input level Low operating power dissipation M5M467405Bxx-5,5S / M5M467805Bxx-5,5S 360.0mW (Max) M5M467405Bxx-6,6S / M5M467805Bxx-6,6S 324.0mW (Max) M5M465405Bxx-5,5S / M5M465805Bxx-5,5S 468.0mW (Max) M5M465405Bxx-6,6S / M5M465805Bxx-6,6S 432.0mW (Max) M5M465165Bxx-5,5S 504.0mW (Max) M5M465165Bxx-6,6S 468.0mW (Max) Self refresh capability* Self refresh current 400µA (Max) EDO mode , Read-modify-write, CAS before RAS refresh, Hidden refresh capabilities Early-write mode , OE and W to control output buffer impedance All inputs, outputs LVTTL compatible and low capacitance * :Applicable to self refresh version(M5M467405/465405/467805/465805/465165BJ,BTP-5S,-6S:option) only ADDRESS Part No. Row Add Col Add Refresh Refresh Cycle Normal S-version RAS Only Ref,Normal R/W 8192/64ms 8192/128ms M5M467405Bxx A0-A12 A0-A10 CBR Ref,Hidden Ref 4096/64ms 4096/128ms Only Ref,Normal R/W 4096/64ms 4096/128ms M5M465405Bxx A0-A11 A0-A11 RAS CBR Ref,Hidden Ref RAS Only Ref,Normal R/W 8192/64ms 8192/128ms M5M467805Bxx A0-A12 A0-A9 CBR Ref,Hidden Ref 4096/64ms 4096/128ms Only Ref,Normal R/W 4096/64ms 4096/128ms M5M465805Bxx A0-A11 A0-A10 RAS CBR Ref,Hidden Ref M5M465165Bxx A0-A11 A0-A9 RAS Only Ref,Normal R/W 4096/64ms 4096/128ms CBR Ref,Hidden Ref APPLICATION Main memory unit for computers, Microcomputer memory, Refresh memory for CRT 1 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM PIN DESCRIPTION M5M467405Bxx / M5M465405Bxx M5M467805Bxx / M5M465805Bxx Pin Name Function Pin Name Function A0-A12 Address Inputs A0-A12 Address Inputs DQ1-DQ4 Data Inputs / Outputs DQ1-DQ8 Data Inputs / Outputs RAS Row Address Strobe Input Column Address Strobe Input RAS Row Address Strobe Input Column Address Strobe Input W OE Vcc Write Control Input W OE Vcc Write Control Input Output Enable Input Power Supply (+3.3V) Vss NC Ground (0V) No Connection Vss NC Ground (0V) No Connection CAS CAS Output Enable Input Power Supply (+3.3V) M5M465165Bxx Pin Name Function A0-A11 Address Inputs DQ1-DQ16 Data Inputs / Outputs Row Address Strobe Input RAS Upper byte control UCAS Column Address Strobe Input Lower byte control LCAS Column Address Strobe Input Write Control Input W OE Vcc Output Enable Input Vss NC Ground (0V) No Connection Power Supply (+3.3V) XX=BJ,BTP M5M467400/465400BJ,BTP 3 30 4 29 5 28 6 7 8 9 10 11 27 26 25 24 23 22 12 21 13 20 14 19 15 18 16 17 Vcc DQ1 DQ2 NC NC NC NC W RAS A0 A1 A2 A3 A4 A5 Vcc Vss DQ4 DQ3 NC NC NC CAS OE A12/NC(Note) A11 A10 A9 A8 A7 A6 Vss Outline 32P0N (400mil SOJ) 1 32 2 31 3 30 4 29 5 28 6 7 8 9 10 11 12 M5M467405BTP 31 M5M465405BTP 32 2 M5M467405BJ 1 M5M465405BJ Vcc DQ1 DQ2 NC NC NC NC W RAS A0 A1 A2 A3 A4 A5 Vcc PIN CONFIGURATION (TOP VIEW) 27 26 25 24 23 22 21 13 20 14 19 15 18 16 17 Vss DQ4 DQ3 NC NC NC CAS OE A12/NC(Note) A11 A10 A9 A8 A7 A6 Vss Outline 32P3N (400mil TSOP Normal Bend) Note : A12...M5M467405Bxx, NC...M5M465405Bxx : NO CONNECTION NC 2 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM M5M467805/465805BJ,BTP PIN CONFIGURATION (TOP VIEW) 3 30 DQ3 DQ4 NC Vcc 4 29 5 28 W RAS A0 A1 A2 A3 A4 A5 Vcc 8 6 7 9 10 11 27 26 25 24 23 22 12 21 13 20 14 19 15 18 16 17 Vss DQ8 DQ7 DQ6 DQ5 Vss CAS Vcc DQ1 DQ2 DQ3 DQ4 NC Vcc 1 32 2 31 3 30 4 29 5 28 OE A12/NC(Note) A11 A10 A9 A8 A7 A6 Vss W RAS A0 A1 A2 A3 A4 A5 Vcc 8 Outline 32P0N (400mil SOJ) 6 7 9 10 11 12 M5M467805BTP 31 M5M465805BTP 32 2 M5M467805BJ 1 M5M465805BJ Vcc DQ1 DQ2 27 26 25 24 23 22 21 13 20 14 19 15 18 16 17 Vss DQ8 DQ7 DQ6 DQ5 Vss CAS OE A12/NC(Note) A11 A10 A9 A8 A7 A6 Vss Outline 32P3N (400mil TSOP Normal Bend) Note : A12...M5M467800Bxx, NC...M5M465800Bxx : NO CONNECTION NC PIN CONFIGURATION (TOP VIEW) M5M465165BJ,BTP Vcc 1 50 Vss Vcc 1 50 Vss DQ1 2 49 DQ16 DQ1 2 49 DQ16 DQ2 3 48 DQ15 DQ2 3 48 DQ15 DQ3 4 47 DQ14 DQ3 4 47 DQ14 DQ4 5 46 DQ13 DQ4 5 46 DQ13 Vcc 6 45 Vss Vcc 6 45 Vss 44 DQ12 DQ5 7 44 DQ12 8 43 DQ11 DQ6 8 43 DQ11 DQ7 9 42 DQ10 DQ7 9 42 DQ10 DQ8 10 41 DQ9 DQ8 10 41 DQ9 NC Vcc 11 40 NC Vcc 11 40 39 NC Vss 39 NC Vss 38 LCAS LCAS UCAS W RAS NC 38 37 15 12 12 13 12 12 13 M5M465165BTP 7 M5M465165BJ DQ5 DQ6 W RAS NC 15 NC 16 35 OE NC NC 16 35 OE NC NC 17 34 NC NC 17 34 NC NC 18 33 NC NC 18 33 NC A0 19 32 A11 A0 19 32 A11 A10 A9 14 36 14 37 36 UCAS A1 20 31 A10 A1 20 31 A2 21 30 A9 A2 21 30 A3 22 29 A8 A3 22 29 A8 A4 23 28 A7 A4 23 28 A7 A5 24 27 A6 A5 24 27 A6 Vcc 25 26 Vss Vcc 25 26 Vss Outline 50P0G (400mil SOJ) Outline 50P3G (400mil TSOP Normal Bend) NC : NO CONNECTION 3 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM FUNCTION The M5M467405(805)/465405(805,165)BJ, BTP provide, in addition to normal read, write, and read-modify-write operations, a number of other functions, e.g., EDO mode, CAS before RAS refresh, and delayed-write. The input conditions for each are shown in Table 1. Table 1 Input conditions for each mode M5M467405Bxx / M5M465405Bxx / M5M467805Bxx / M5M465805Bxx Inputs Input/Output Operation Column address APD Refresh RAS CAS W OE Read ACT ACT NAC ACT Row address APD OPN VLD NO Write (Early write) ACT ACT ACT DNC APD APD VLD OPN NO Write (Delayed write) ACT ACT ACT DNC APD APD VLD IVD NO Read-modify-write ACT ACT ACT ACT APD APD VLD VLD NO RAS-only refresh ACT NAC DNC DNC APD DNC OPN OPN YES Hidden refresh ACT ACT DNC ACT DNC DNC OPN VLD YES CAS before RAS refresh ACT ACT NAC DNC DNC DNC DNC OPN YES Standby NAC DNC DNC DNC DNC DNC DNC OPN NO Column address APD DQ1~DQ8 DQ9~DQ16 Input Output Remark EDO mode identical M5M465165Bxx Inputs Input/Output Operation Refresh RAS LCAS UCAS W OE Lower byte read ACT ACT NAC NAC ACT Row address APD VLD OPN NO Upper byte read ACT NAC ACT NAC ACT APD APD OPN VLD NO Word read ACT ACT ACT NAC ACT APD APD VLD VLD NO Lower byte write ACT ACT NAC ACT NAC APD APD DIN DNC NO Upper byte write ACT NAC ACT ACT NAC APD APD DNC DIN NO Word write ACT ACT ACT ACT NAC APD APD DIN DIN NO RAS-only refresh ACT NAC NAC DNC DNC APD DNC OPN OPN YES Hidden refresh ACT ACT ACT NAC ACT DNC DNC VLD VLD YES CAS before RAS refresh ACT ACT ACT DNC DNC DNC DNC OPN OPN YES Stand-by NAC DNC DNC DNC DNC DNC DNC OPN OPN NO Remark EDO mode identical Note : ACT : active, NAC : nonactive, DNC : don' t care, VLD : valid, IVD : Invalid, APD : applied, OPN : open 4 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM M5M467405Bxx / M5M465405Bxx BLOCK DIAGRAM Vcc (3.3V) CAS RAS WRITE CONTROL INPUT W CLOCK GENERATOR CIRCUIT A0~A11 (Note) A0 COLUMN DECODER A1 A4 A5 ADDRESS INPUTS A6 A7 A8 A9 DQ2 DQ3 A0~ A12 (Note) A10 A11 DQ1 SENSE REFRESH AMPLIFIER & I /O CONTROL ROW DECODER A3 ROW & COLUMN ADDRESS BUFFER A2 Vss (0V) (4) DATA IN BUFFERS ROW ADDRESS STROBE INPUT MEMORY CELL (67108864 BITS) (4) DATA OUT BUFFERS COLUMN ADDRESS STROBE INPUT DATA INPUTS / OUTPUTS DQ4 OE OUTPUT ENABLE INPUT A12 (Note) Note : Refer to Page 1 (ADDRESS) M5M467805Bxx / M5M465805Bxx BLOCK DIAGRAM Vcc (3.3V) CAS RAS WRITE CONTROL INPUT W A0~A10 A0 (Note) COLUMN DECODER A1 A2 A5 ADDRESS INPUTS A6 A7 A8 A9 A0~ A12 MEMORY CELL (67108864 BITS) DQ4 DATA INPUTS / OUTPUTS DQ6 DQ7 DQ8 OE OUTPUT ENABLE INPUT A11 A12 (Note) Note 5 DQ2 DQ5 (Note) A10 DQ1 DQ3 SENSE REFRESH AMPLIFIER & I /O CONTROL ROW DECODER A4 ROW & COLUMN ADDRESS BUFFER A3 Vss (0V) (8) DATA IN BUFFERS ROW ADDRESS STROBE INPUT CLOCK GENERATOR CIRCUIT (8) DATA OUT BUFFERS COLUMN ADDRESS STROBE INPUT : Refer to Page 1 (ADDRESS) MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM M5M465165Bxx BLOCK DIAGRAM ROW ADDRESS RAS STROBE INPUT LOWER BYTE CONTROL LCAS COLUMN ADDRESS STROBE INPUT UPPER BYTE CONTROL UCAS COLUMN ADDRESS STROBE INPUT CIRCUIT DATA IN BUFFERS BUFFERS BUFFERS (8)LOWER W DATA OUT UPPER DATA IN LOWER (8)LOWER VSS (0V) (8)UPPER WRITE CONTROL INPUT VCC (3.3V) CLOCK GENERATOR DQ1 DQ2 LOWER DATA INPUTS / OUTPUTS DQ8 A0~A9 6 SENSE REFRESH AMPLIFIER & I /O DQ9 DQ10 UPPER DATA INPUTS / OUTPUTS MEMORY CELL (67108864BITS) BUFFERS A11 (8)UPPER A0 ~ DATA OUT CONTROL ROW DECODER ROW & COLUMN COLUMN DECODER ADDRESS BUFFER ADDRESS INPUTS A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 DQ16 OE OUTPUT ENABLE INPUT MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Vcc Supply voltage VI Input voltage V0 Output voltage I0 Output current Pd Power dissipation Topr Operating temperature Tstg Storage temperature Conditions Unit ~ 4.6 -0.5 ~ 4.6 -0.5 ~ 4.6 With respect to Vss Ta=25 C V V V 50 mA 1000 mW ~ 70 -65 ~ 150 0 RECOMMENDED OPERATING CONDITIONS Symbol Ratings -0.5 ~ 70 C, unless (Ta=0 Min Nom Max C otherwise noted) (Note 1) Limits Parameter C Unit Vcc Supply voltage 3.0 3.3 3.6 V Vss Supply voltage 0 0 0 V VIH High-level input voltage, all inputs 2.0 Vcc+0.3 V VIL Low-level input voltage, all inputs -0.3 0.8 V Note 1 : All voltage values are with respect to Vss. ELECTRICAL CHARACTERISTICS [M5M467405B / M5M467805B] Symbol (Ta=0 ~ 70 C , Vcc=3.3 ± 0.3V, Vss=0V, unless Parameter Test conditions VOH High-level output voltage IOH=-2mA VOL Low-level output voltage IOZ Off-state output current IOL=2mA Q floating 0V ≤ VOUT II Input current ICC1 (AV) Average supply current from Vcc operating (Note 3,4,5) ICC2 (AV) ICC4 (AV) ICC6 (AV) Average supply current from Vcc (Note 6) stand-by otherwise noted) (Note 2) ≤ Vcc 0V≤VIN ≤ Vcc+0.3V, Other input pins=0V M5M467405B-5,5S M5M467805B-5,5S M5M467405B-6,6S M5M467805B-6,6S M5M467405B-5,5S -6,6S M5M467805B-5,5S -6,6S RAS, CAS cycling tRC=tWC=min. output open RAS= CAS =VIH, output open Average supply current from Vcc EDO-Mode (Note 3,4,5) M5M467405B-5,6 M5M467805B-5,6 M5M467405B-5S,6S M5M467805B-5S,6S M5M467405B-5,5S M5M467805B-5,5S M5M467405B-6,6S M5M467805B-6,6S Average supply current from Vcc CAS before RAS refresh (Note 3,5) mode M5M467405B-5,5S M5M467805B-5,5S M5M467405B-6,6S M5M467805B-6,6S Limits Min Typ Max Unit 2.4 Vcc 0 0.4 V -10 10 -10 10 µA µA V 100 mA 90 1 mA 0.5 RAS= CAS ≥Vcc -0.2V,output open 0.3 RAS=VIL, CAS cycling tHPC=min. output open 100 CAS before RAS refresh cycling tRC=min. output open 130 mA 90 mA 120 Note 2: Current flowing into an IC is positive, out is negative. 3: Icc1 (AV) , Icc4 (AV) and Icc6 (AV) are dependent on cycle rate. Maximum current is measured at the fastest cycle rate. 4: Icc1 (AV) and Icc4 (AV) are dependent on output loading. Specified values are obtained with the output open. 5: Column Address can be changed once or less while RAS=VIL and CAS=VIH. 7 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM ELECTRICAL CHARACTERISTICS [M5M465405B / M5M465805B] Symbol (Ta=0 ~ 70 C, Vcc=3.3 ± 0.3V, Vss=0V, unless Parameter Test conditions VOH High-level output voltage IOH=-2mA VOL Low-level output voltage IOZ Off-state output current IOL=2mA Q floating 0V ≤ VOUT II Input current ICC1 (AV) Average supply current from Vcc operating (Note 3,4,5) ICC2 (AV) ICC4 (AV) ICC6 (AV) otherwise noted) (Note 2) ≤ Vcc 0V≤VIN ≤ Vcc+0.3V, Other input pins=0V Average supply current from Vcc (Note 6) stand-by M5M465405B-5,5S M5M465805B-5,5S M5M465405B-6,6S M5M465805B-6,6S M5M465405B-5,5S -6,6S M5M465805B-5,5S -6,6S Limits Min Typ Vcc 0 0.4 V -10 10 µA µA -10 10 Average supply current from Vcc CAS before RAS refresh (Note 3,5) mode M5M465405B-5,5S M5M465805B-5,5S M5M465405B-6,6S M5M465805B-6,6S V 130 mA 120 RAS= CAS =VIH, output open Average supply current from Vcc EDO-Mode (Note 3,4,5) Unit 2.4 RAS, CAS cycling tRC=tWC=min. output open M5M465405B-5,6 M5M465805B-5,6 RAS= CAS ≥Vcc -0.2V,output open M5M465405B-5S,6S M5M465805B-5S,6S M5M465405B-5,5S RAS=VIL, CAS cycling M5M465805B-5,5S tHPC=min. M5M465405B-6,6S output open M5M465805B-6,6S Max 1 mA 0.5 0.3 100 mA 90 130 CAS before RAS refresh cycling tRC=min. output open mA 120 [M5M465165B] Symbol Parameter Test conditions VOH High-level output voltage IOH=-2mA VOL Low-level output voltage IOL=2mA IOZ Off-state output current II ICC1 (AV) ICC2 (AV) ICC4 (AV) ICC6 (AV) 8 Limits Min Typ Max Unit 2.4 Vcc 0 0.4 Q floating 0V ≤ VOUT ≤ Vcc V -10 10 Input current 0V -10 µA µA Average supply current M5M465165B-5,5S from Vcc (Note 3,4,5) M5M465165B-6,6S operating RAS, CAS cycling tRC=tWC=min. output open Average supply current from Vcc (Note 6) stand-by M5M465165B-5,5S -6,6S M5M465165B-5,6 ≤ VIN ≤ Vcc+0.3V, Other input pins=0V RAS= CAS =VIH, output open M5M465165B-5S,6S RAS= CAS ≥ Vcc -0.2V, output open 10 140 130 0.5 120 Average supply current from Vcc CAS before RAS refresh (Note 3,5) mode CAS before RAS refresh cycling tRC=min. output open 140 MITSUBISHI ELECTRIC mA 0.3 RAS=VIL, CAS cycling tHPC=min. output open M5M465165B-6,6S mA 1 Average supply current M5M465165B-5,5S from Vcc (Note 3,4,5) M5M465165B-6,6S EDO-Mode M5M465165B-5,5S V 110 mA mA 130 Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM CAPACITANCE Symbol ~ 70 C , Vcc=3.3 ± 0.3V, Vss=0V, unless (Ta=0 Parameter otherwise noted) Limits Test conditions CI (A) Input capacitance,address inputs CI (OE) Input capacitance, OE input CI (W) Input capacitance, write control input CI (RAS) Input capacitance, RAS input CI (CAS) CI / O Min Max 5 Typ Unit pF 7 pF 7 pF 7 pF Input capacitance, CAS input 7 pF Input/Output capacitance, data ports 7 pF SWITCHING CHARACTERISTICS VI=Vss f=1MHZ Vi=25mVrms (Ta=0 ~ 70 C , Vcc=3.3 ± 0.3V, Vss=0V, unless otherwise noted , see notes 6,14,15) Limits Symbol M5M46X405B-5,5S M5M46X405B-6,6S M5M46X805B-5,5S M5M46X805B-6,6S M5M465165B-5,5S M5M465165B-6,6S Parameter Min Max Min Unit Max tCAC Access time from CAS (Note 7,8) 13 15 ns tRAC Access time from RAS (Note 7,9) 50 60 ns tAA Column address access time (Note 7,10) 25 30 ns tCPA Access time from CAS precharge (Note 7,11) 28 33 ns tOEA Access time from OE (Note 7) 13 15 ns tOHC Output hold time from CAS tOHR Output hold time from RAS tCLZ tOEZ 5 5 (Note 13) 5 5 ns ns Output low impedance time from CAS low (Note 7) 5 Output disable time after OE high (Note 12) 13 15 tWEZ Output disable time after W high (Note 12) 13 15 tOFF Output disable time after CAS high (Note 12,13) 13 15 tREZ Output disable time after RAS high (Note 12,13) 13 15 ns 5 ns ns ns ns Note 6: An initial pause of 500µs is required after power-up followed by a minimum of eight initialization cycles (any combination of cycles containing RAS-only refresh or CAS before RAS refresh). Note the RAS may be cycled during the initial pause. And any eight initialization cycles are required after prolonged periods (greater than 64 ms) of RAS inactivity before proper device operation is achieved. 7: Measured with a load circuit equivalent to VOH=2.4V(IOH=-2mA) / VOL=0.4V(IOL=2mA) loads and 100pF. The reference levels for measuring of output signals are VOH=2.0V and VOL=0.8V. 8: Assumes that tRCD ≥ tRCD(max) and tASC ≥ tASC(max) and tCP ≥ tCP(max). 9: Assumes that tRCD ≤ tRCD(max) and tRAD ≤ tRAD(max). If tRCD or tRAD is greater than the maximum recommended value shown in this table, tRAC will increase by amount that tRCD exceeds the value shown. 10: Assumes that tRAD ≥ tRAD(max) and tASC ≤ tASC(max). 11: Assumes that tCP ≤ tCP(max) and tASC ≥ tASC(max). 12: tOEZ(max), tWEZ(max), tOFF(max) and tREZ(max) defines the time at which the output achieves the high impedance state (IOUT ≤ ± 10 µA) and is not reference to VOH(min) or VOL(max). 13: Output is disabled after both RAS and CAS go to high. 9 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM TIMING REQUIREMENTS (For Read, Write, Read-Modify-Write ,Refresh, and EDO Mode Cycles) (Ta=0 ~ 70 C , Vcc=3.3 ± 0.3V, Vss=0V, unless otherwise noted See notes 14,15) Symbol Limits M5M46X405B-5,5S M5M46X405B-6,6S M5M46X805B-5,5S M5M46X805B-6,6S M5M465165B-5,5S M5M465165B-6,6S Parameter Min Max Min Unit Max tREF Refresh cycle time tREF Refresh cycle time (S-version only) tRP RAS high pulse width tRCD Delay time, RAS low to CAS low tCRP Delay time, CAS high to RAS low 5 5 ns tRPC Delay time, RAS high to CAS low CAS high pulse width 0 8 0 10 ns tCPN tRAD Column address delay time from RAS low tASR Row address setup time before RAS low tASC Column address setup time before CAS low tRAH Row address hold time after RAS low 8 10 ns tCAH Column address hold time after CAS low 8 10 ns tDZC Delay time, data to CAS low (Note19) 0 0 ns tDZO Delay time, data to OE low (Note19) 0 0 ns tRDD Delay time, RAS high to data (Note20) 13 15 ns tCDD Delay time, CAS high to data (Note20) 13 15 tODD Delay time, OE high to data (Note20) 13 15 ns ns tWED Delay time, W low to data Transition time (Note20) (Note21) 13 tT 64 64 ms 128 128 ms 30 (Note16) (Note17) 40 14 37 25 10 45 ns ns 12 0 (Note18) ns 14 30 ns 13 ns ns 0 10 0 0 15 1 50 1 ns ns 50 Note 14: The timing requirements are assumed tT =2ns. 15: VIH(min) and VIL(max) are reference levels for measuring timing of input signals. 16: tRCD(max) is specified as a reference point only. If tRCD is less than tRCD(max), access time is tRAC. If tRCD is greater than tRCD(max), access time is controlled exclusively by tCAC or tAA. 17: tRAD(max) is specified as a reference point only. If tRAD ≥ tRAD(max) and tASC ≤ tASC(max), access time is controlled exclusively by tAA. 18: tASC(max) is specified as a reference point only. If tRCD ≥ tRCD(max) and tASC ≥ tASC(max), access time is controlled exclusively by tCAC. 19: Either tDZC or tDZO must be satisfied. 20: Either tRDD or tCDD or tODD or tWED must be satisfied. 21: tT is measured between VIH(min) and VIL(max). Read and Refresh Cycles Symbol Limits M5M46X405B-5,5S M5M46X405B-6,6S M5M46X805B-5,5S M5M46X805B-6,6S M5M465165B-5,5S M5M465165B-6,6S Parameter Min Max Min Unit Max tRC Read cycle time 84 tRAS RAS low pulse width 50 10000 60 10000 ns tCAS CAS low pulse width 8 10000 10 10000 ns tCSH CAS hold time after RAS low 35 40 ns tRSH RAS hold time after CAS low 13 15 ns tRCS Read Setup time before CAS low 0 0 ns tRCH Read hold time after CAS high (Note 22) 0 0 ns tRRH Read hold time after RAS high (Note 22) 0 0 ns tRAL tCAL Column address to RAS hold time Column address to CAS hold time 25 30 ns 13 18 ns tORH RAS hold time after OE low 13 15 ns tOCH CAS hold time after OE low 13 15 ns 104 ns Note 22: Either tRCH or tRRH must be satisfied for a read cycle. 10 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM Write Cycle (Early Write and Delayed Write) Limits Symbol M5M46X405B-5,5S M5M46X405B-6,6S M5M46X805B-5,5S M5M46X805B-6,6S M5M465165B-5,5S M5M465165B-6,6S Parameter Min Max Min Unit Max tWC Write cycle time 84 tRAS RAS low pulse width 50 10000 60 10000 ns tCAS CAS low pulse width 8 10000 10 10000 ns tCSH CAS hold time after RAS low 35 40 ns tRSH RAS hold time after CAS low 13 15 ns tWCS Write setup time before CAS low 0 0 ns tWCH Write hold time after CAS low 8 10 ns tCWL CAS hold time after W low 8 10 ns tRWL RAS hold time after W low 8 10 ns tWP Write pulse width 8 10 ns tDS Data setup time before CAS low or W low 0 0 ns tDH Data hold time after CAS low or W low 8 10 ns (Note 24) 104 ns Read-Write and Read-Modify-Write Cycles Limits Symbol M5M46X405B-5,5S M5M46X405B-6,6S M5M46X805B-5,5S M5M46X805B-6,6S M5M465165B-5,5S M5M465165B-6,6S Parameter Min Max Min Max tRWC Read write/read modify write cycle time tRAS RAS low pulse width 75 10000 89 10000 ns tCAS CAS low pulse width 38 10000 44 10000 ns tCSH CAS hold time after RAS low 70 82 ns tRSH RAS hold time after CAS low 38 44 ns tRCS Read setup time before CAS low 0 0 ns tCWD Delay time, CAS low to W low (Note24) 28 32 ns tRWD Delay time, RAS low to W low (Note24) 65 77 ns tAWD Delay time, address to W low (Note24) 40 47 ns tOEH OE hold time after W low 13 15 ns (Note23) 109 Unit 133 ns Note 23: tRWC is specified as tRWC(min)=tRAC(max)+tODD(min)+tRWL(min)+tRP(min)+4tT. 24: tWCS, tCWD, tRWD and tAWD and, tCPWD are specified as reference points only. If tWCS ≥ tWCS(min) the cycle is an early write cycle and the DQ pins will remain high impedance throughout the entire cycle. If tCWD ≥ tCWD(min), tRWD ≥ tRWD (min), tAWD ≥ tAWD(min) and tCPWD ≥ tCPWD(min) (for EDO mode cycle only), the cycle is a read-modify-write cycle and the DQ will contain the data read from the selected address. If neither of the above condition (delayed write) is satisfied, the DQ (at access time and until CAS or OE goes back to VIH ) is indeterminate. 11 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM EDO Mode Cycle (Read, Early Write, Read-Write, Read-Modify-Write Cycle, Read Write Mix Cycle, Hi-Z control by OE or W) (Note 25) Limits Symbol M5M46X405B-5,5S M5M46X405B-6,6S M5M46X805B-5,5S M5M46X805B-6,6S M5M465165B-5,5S M5M465165B-6,6S Parameter Min Max Min Unit Max tHPC tHPRWC EDO mode read/write cycle time EDO Mode read write / read modify write cycle time 20 25 ns 55 66 tDOH tRAS Output hold time from CAS low RAS low pulse width for read write cycle ns 5 5 (Note26) tCP CAS high pulse width (Note27) tCPRH RAS hold time after CAS precharge 28 33 ns tCPWD tCHOL (Note24) Delay time, CAS precharge to W low Hold time to maintain the data Hi-Z until CAS access 43 50 ns 7 7 ns tOEPE OE Pulse Width (Hi-Z control) 7 7 ns tWPE W Pulse Width (Hi-Z control) 7 ns tHCWD Delay time, CAS low to W low after read 7 28 32 ns tHAWD Delay time, Address to W low after read 40 47 ns tHPWD Delay time, CAS precharge to W low after read 43 50 ns tHCOD Delay time, CAS low to OE high after read 13 15 ns tHAOD Delay time, Address to OE high after read 25 30 ns tHPOD Delay time, CAS precharge to OE high after read 28 33 ns 65 100000 77 100000 ns ns 8 13 10 16 ns Note 25: All previously specified timing requirements and switching characteristics are applicable to their respective EDO mode cycle. 26: tRAS(min) is specified as two cycles of CAS input are performed. 27: tCP(max) is specified as a reference point only. If tCP ≥ tCP(max) , access time is controlled exclusively by tCAC. CAS before RAS Refresh Cycle Symbol Parameter (Note 28) Limits M5M46X405B-5,5S M5M46X405B-6,6S M5M46X805B-5,5S M5M46X805B-6,6S Unit M5M465165B-5,5S M5M465165B-6,6S Min tCSR CAS setup time before RAS low tCHR Max Min Max 5 5 ns CAS hold time after RAS low 10 10 ns tRSR Read setup time before RAS low 10 10 ns tRHR Read hold time after RAS low 10 10 ns Note 28: Eight or more CAS before RAS cycles instead of eight RAS cycles are necessary for proper operation of CAS before RAS refresh mode. 12 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM SELF REFRESH SPECIFICATIONS Self refresh devices are denoted by "S" after speed item, like -5S / -6S . The other characteristics and requirements than the below are same as normal devices. ELECTRICAL CHARACTERISTICS Symbol ICC8 (AV) ICC9 (AV) (Ta=0 ~ 70 C , Vcc=3.3V Parameter otherwise noted) (Note 2) Test conditions Average supply current from Vcc Self - Refresh cycle (note 6) M5M46X405B-5S,6S M5M46X805B-5S,6S M5M465165B-5S,6S (Ta=0 ~ 70 C , Vcc=3.3V Min Limits Typ CAS before RAS refresh cycling input high level ≥ Vcc-0.2V input low level ≤ 0.2V output = OPEN , tRC = 31.25µs tRAS = tRAS(min) ~ 300ns Average supply current M5M46X405B-5S,6S from Vcc M5M46X805B-5S,6S Extended - Refresh cycle M5M465165B-5S,6S (note 5,6) TIMING REQUIREMENTS ± 0.3V, Vss=0V, unless RAS = CAS ≤ 0.2V output = OPEN ± 0.3V, Vss=0V, unless Max Unit 500 µA 400 µA otherwise noted See notes 14,15) Limits Symbol Parameter M5M46X405B-5S M5M46X405B-6S M5M46X805B-5S M5M46X805B-6S M5M465165B-5S M5M465165B-6S Min Max Min Unit Max 100 100 µS tRPS Self Refresh RAS low pulse width Self Refresh RAS high precharge time 84 104 ns tCHS Self Refresh CAS hold time - 50 - 50 ns tRASS SELF REFRESH ENTRY & EXIT CONDITIONS (1) In case of CBR distributed refresh The last / first full refresh cycles must be made within on the condition of tNS ≤ 128 ms and tSN ≤ 128 ms. tNS / tSN before / after self refresh , tSN tNS Self refresh period DISTRIBUTED REFRESH < 128 ms > DISTRIBUTED REFRESH < 128 ms > (2) In case of burst refresh The last / first full refresh cycles must be made within tNS / tSN before / after self refresh , on the condition of tNS ≤ 16 ms and tSN ≤ 16 ms. tSN tNS Self refresh period BURST REFRESH < 128 ms > 13 BURST REFRESH < 128 ms > MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM Timing Diagrams Read Cycle (Note 29) tRC tRAS tRP VIH RAS VIL tCSH tCRP tRCD tRPC tRSH tCRP tCAS VIH CAS tCPN LCAS / UCAS VIL (at M5M465165Bxx only) tASR VIH Address tRAL tCAL tRAD tRAH tASC ROW ADDRESS COLUMN ADDRESS ROW ADDRESS VIL tASR tCAH tRRH tRCH tRCS VIH W VIL tDZC tCDD tRDD DQ1 ~ DQ4 (8,16) VIH (INPUTS) VIL Hi-Z tREZ tCAC tAA tCLZ DQ1 ~ DQ4 (8,16) VOH (OUTPUTS) VOL tWEZ tOFF tOHC tOHR Hi-Z Hi-Z DATA VALID tRAC tDZO tOEZ tODD tOEA tOCH VIH OE tORH VIL Note 29: Indicates the don't care input. VIH(min) ≤ VIN ≤ VIH(max) or VIL(min) ≤ VIN ≤ VIL(max) Indicates the invalid output. Indicates the skew of the two inputs. (at M5M465165Bxx only) 14 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM Write Cycle (Early Write) tWC tRAS tRP VIH RAS VIL tCSH tCRP tRCD tRSH tRPC tCRP tCAS VIH CAS LCAS / UCAS VIL (at M5M465165Bxx only) tASR VIH Address VIL tRAH tASC tASR tCAH COLUMN ADDRESS ROW ADDRESS tWCS ROW ADDRESS tWCH VIH W VIL tDS DQ1 ~ DQ4 (8,16) (INPUTS) tDH VIH DATA VALID VIL VOH DQ1 ~ DQ4 (8,16) (OUTPUTS) VOL Hi-Z VIH OE VIL 15 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM Write Cycle (Delayed Write) tWC tRAS tRP VIH RAS VIL tCSH tCRP tRCD tRPC tCRP tRSH tCAS VIH CAS LCAS / UCAS VIL (at M5M465165Bxx only) tASR VIH Address VIL tRAH tASC ROW ADDRESS tCAH tASR COLUMN ADDRESS ROW ADDRESS tCWL tRWL tRCS tWP VIH W VIL tWCH tDS tDZC VIH DQ1 ~ DQ4 (8,16) (INPUTS) VIL Hi-Z tDH DATA VALID tCLZ DQ1 ~ DQ4 (8,16) VOH (OUTPUTS) VOL Hi-Z Hi-Z tDZO tOEH tOEZ tODD VIH OE VIL 16 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM Read-Write, Read-Modify-Write Cycle tRWC tRAS tRP VIH RAS VIL tRPC tCSH tCRP tRCD tCRP tRSH tCAS VIH CAS LCAS / UCAS VIL tRAD (at M5M465165Bxx only) tASR tRAH VIH Address VIL tASR tCAH tASC ROW ADDRESS ROW ADDRESS COLUMN ADDRESS tCWL tRWL tWP tAWD tCWD tRWD tRCS VIH W VIL tDS tDZC DQ1 ~ DQ4 (8,16) (INPUTS) VIH Hi-Z VIL tDH DATA VALID tCAC tAA tCLZ DQ1 ~ DQ4 (8,16) (OUTPUTS) VOH Hi-Z Hi-Z DATA VALID VOL tRAC tODD tDZO tOEA tOEH tOEZ VIH OE VIL 17 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM EDO Mode Read Cycle tRAS tRP VIH RAS VIL tCSH tCRP tRCD tHPC tCAS tCP tCAS tRSH tCAS tCP tRPC tCRP VIH CAS LCAS / UCAS VIL (at M5M465165Bxx only) tRAD tASR VIH Address VIL tRAH tCPRH tASC tCAH tASC COLUMN ADDRESS-1 ROW ADDRESS tASC tCAH COLUMN ADDRESS-3 COLUMN ADDRESS-2 tRCS tRAL tCAL tASR tCAH tCAL tCAL ROW ADDRESS tRRH tRCH VIH W VIL tWEZ tDZC tRDD tCDD VIH DQ1 ~ DQ4 (8,16) (INPUTS) VIL Hi-Z tAA tCLZ VOH DQ1 ~ DQ4 (8,16) (OUTPUTS) VOL Hi-Z tAA tAA tDOH tDOH DATA VALID-1 tRAC tDZO tCAC tCAC tCAC tCPA tOEA DATA VALID-2 tREZ tOHR tOFF tOHC DATA VALID-3 tCPA tOEZ tOCH VIH OE VIL tODD 18 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM EDO Mode Write Cycle (Early Write) tRAS tRP VIH RAS VIL tCSH tCRP tRSH tHPC tRCD tCAS tCP tCAS tCP tCAS tRPC tCRP VIH CAS LCAS / UCAS VIL (at M5M465165Bxx only) VIH Address VIL tCAL tCAL tASR tRAH ROW ADDRESS tCAH tASC COLUMN ADDRESS-1 tCAH tASC COLUMN ADDRESS-2 tCAL tCAH tASC COLUMN ADDRESS-3 tWCS tWCH tWCS tWCH tWCS tWCH tDS tDH tDS tDH tDS tDH tASR ROW ADDRESS VIH W VIL DQ1 ~ DQ4 (8,16) (INPUTS) VIH VIL DQ1 ~ DQ4 (8,16) VOH (OUTPUTS) VOL DATA VALID-1 DATA VALID-2 DATA VALID-3 Hi-Z VIH OE VIL 19 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM EDO Mode Read-Write, Read-Modify-Write Cycle tRP tRAS VIH RAS tRPC VIL tRWL tCSH tRCD tCRP tCAS tHPRWC tCAS tCP tCRP VIH CAS LCAS / UCAS VIL tRAD (at M5M465165Bxx only) tASR VIH Address VIL tRAH tASC tCAH tASC ROW ADDRESS tASR COLUMN ADDRESS-2 COLUMN ADDRESS-1 tAWD tRCS tCWL tCAH tAWD tCWD tCWL tCWD tWP ROW ADDRESS tRCS tWP VIH W VIL tRWD tCPWD tDZC tDH tDS DQ1 ~ DQ4 (8,16) VIH (INPUTS) VIL Hi-Z DATA VALID-2 tCAC tAA tCLZ tCLZ Hi-Z Hi-Z DATA VALID -1 tRAC tOEA VIH Hi-Z DATA VALID -2 tCPA tDZO tODD tOEZ OE Hi-Z tCAC tDZO tDH tDS DATA VALID-1 tAA DQ1 ~ DQ4 (8,16) VOH (OUTPUTS) VOL tDZC tODD tOEH tOEH tOEA tOEZ VIL 20 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM EDO Mode Mix Cycle (1) (Note 30) tRAS tRP tRWL VIH RAS tRPC VIL tCSH tCRP tRCD tHPC tCP tCAS tCAS tHPRWC tCWL VIH CAS tCRP tCAS tCP LCAS / UCAS VIL (at M5M465165Bxx only) tRAD tASR VIH Address VIL tRAH ROW ADDRESS tASC tCAH tASC COLUMN ADDRESS-1 tCAH tASC COLUMN ADDRESS-2 tRCS tCPWD tAWD tCWD tCAL tCAL ROW ADDRESS COLUMN ADDRESS-3 tWCH tWCS tASR tCAH tWP VIH W VIL tDZC tDH tDS VIH DQ1 ~ DQ4 (8,16) (INPUTS) VIL DATA VALID-2 tCAC tAA VOH tRAC tDZO DATA VALID -3 tCPA tOEA tOEZ tDZO tOEA tOEZ tOEH tOCH VIH OE DATA VALID-3 tCLZ DATA VALID -1 VOL tDH tCAC tWEZ Hi-Z tDS tAA tWED tCLZ DQ1 ~ DQ4 (8,16) (OUTPUTS) tDZC VIL tODD tODD Note 30: OE=L; W Hi-Z control OE=H; OE Hi-Z control 21 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM EDO Mode Mix Cycle (2) (Note 30) VIH RAS VIL tHPC CAS VIH LCAS / UCAS VIL (at M5M465165Bxx only) tCP tASC Address VIH VIL tCAS tCAS tCAH tASC COLUMN ADDRESS-1 tCAH tASC COLUMN ADDRESS-2 tRCH tCAL tCAH COLUMN ADDRESS-3 tCAL tWCH tWCS VIH W VIL tHCWD tHAWD tDH tHPWD DQ1 ~ DQ4 (8,16) (INPUTS) VIH tCAC tCAC tAA tCPA VOH DQ1 ~ DQ4 (8,16) (OUTPUTS) VOL tAA tWED tCPA tWEZ DATA VALID-1 tHCOD tHAOD VIH Hi-Z DATA VALID-2 Hi-Z VIL tDZC tDS tOEZ tODD tCLZ Hi-Z DATA VALID-3 tDZC tOEA tHPOD OE VIL Note 30: OE=L; W Hi-Z control OE=H; OE Hi-Z control 22 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM EDO Mode Read Cycle (Hi-Z control by OE) tRAS tRP VIH RAS VIL tCSH CAS tCRP tRCD tASR tRAD tRAH tASC tCAS tCP tHPC tCAS tCP tRSH tCAS tCPRH tASC tCAH tRPC tCRP VIH LCAS / UCAS VIL (at M5M465165Bxx only) VIH Address VIL ROW ADDRESS tCAH tASC COLUMN ADDRESS-1 tCAH COLUMN ADDRESS-2 tASR ROW ADDRESS COLUMN ADDRESS-3 tRRH tRAL tRCS tRCH VIH W VIL tWEZ tDZC DQ1 ~ DQ4 (8,16) (INPUTS) tRDD tCDD VIH Hi-Z tCAC tCAC VIL tAA tRAC DATA VALID -1 tOEZ VIH DATA VALID-2 tCPA tOEA Hi-Z tREZ tOHR tOFF tOHC DATA VALID-3 tCPA tCHOL tOCH OE tCLZ tDOH DATA VALID-1 Hi-Z tDZO tAA tAA tCLZ DQ1 ~ DQ4 (8,16) VOH (OUTPUTS) VOL tCAC tOEZ tOEZ tOEA VIL tOEPE 23 MITSUBISHI ELECTRIC tOEPE tODD Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM EDO Mode Read Cycle (Hi-Z control by W) tRAS tRP VIH RAS VIL tCSH tCRP tRCD tCAS tCP tHPC tCAS tRSH tCAS tCP tRPC tCRP VIH CAS LCAS / UCAS VIL (at M5M465165Bxx only) tRAD tASR Address VIH VIL tRAH tASC ROW ADDRESS tASC tCAH COLUMN ADDRESS-1 tCPRH tCAH tASC tCAH COLUMN ADDRESS-2 tASR ROW ADDRESS COLUMN ADDRESS-3 tRAL tRRH tRCH tRCS tRCS tRCH VIH W VIL DQ1 ~ DQ4 (8,16) (INPUTS) VIH tRDD tCDD Hi-Z VIL tCAC tAA tAA tCLZ tDOH Hi-Z tRAC tOEA tWEZ DATA VALID-2 DATA VALID-1 tDZO tCAC tCAC tAA VOH DQ1 ~ DQ4 (8,16) (OUTPUTS) VOL tWEZ tWPE tDZC tCPA tOCH tCLZ Hi-Z tREZ tOHR tOFF tOHC DATA VALID-3 tCPA tOEZ VIH OE VIL tODD 24 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM RAS-only Refresh Cycle tRC tRAS tRP VIH RAS VIL tRPC tCRP CAS tCRP VIH LCAS / UCAS VIL (at M5M465165Bxx only) tASR VIH Address VIL tRAH tASR ROW ADDRESS ROW ADDRESS VIH W VIL VIH DQ1 ~ DQ4 (8,16) (INPUTS) VIL VOH DQ1 ~ DQ4 (8,16) (OUTPUTS) VOL Hi-Z VIH OE VIL 25 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM CAS before RAS Refresh Cycle tRC tRP tRC tRAS tRAS tRP VIH RAS VIL tRPC tCSR CAS tCHR tRPC tCSR tCHR tRPC tCRP VIH LCAS / UCAS VIL (at M5M465165Bxx only) tCPN tASR VIH ROW ADDRESS Address VIL COLUMN ADDRESS tRRH tRCH tRSR tRHR tRSR tRHR tRCS VIH W VIL tCDD VIH DQ1 ~ DQ4 (8,16) (INPUTS) VIL DQ1 ~ DQ4 (8,16) (OUTPUTS) tREZ tOHR tOFF tOHC VOH Hi-Z VOL tODD tOEZ VIH OE VIL 26 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM Hidden Refresh Cycle (Read) (Note 31) tRC tRC tRAS tRP tRAS tRP VIH RAS VIL tRPC tCRP tRCD tCRP tCHR tRSH VIH CAS LCAS / UCAS VIL (at M5M465165xx only)B tRAD tASR Address VIH VIL tRAH tASC tASR tCAH ROW ADDRESS COLUMN ADDRESS ROW ADDRESS tRCS tRAL tRRH tRSR tRHR VIH W VIL tCDD tDZC VIH DQ1 ~ DQ4 (8,16) (INPUTS) VIL tRDD Hi-Z tREZ tOHR tCAC tAA tCLZ DQ1 ~ DQ4 (8,16) (OUTPUTS) VOH Hi-Z tOFF tOHC Hi-Z DATA VALID VOL tRAC tDZO tOEA tORH tOEZ tODD VIH OE VIL Note 31: Early write, delayed write, read write or read modify write cycle is applicable instead of read cycle. Timing requirements and output state are the same as that of each cycle shown above. 27 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM Self Refresh Cycle tRASS tRP tRPS VIH RAS VIL tRPC tRPC tCSR tCHS tCRP VIH CAS LCAS / UCAS VIL (at M5M465165Bxx only) tCPN tASR Address VIH ROW ADDRESS VIL tRRH tRCH tRSR tRHR VIH W VIL tCDD DQ1 ~ DQ4 (8,16) (INPUTS) VIH VIL tREZ tOHR tOFF tOHC VOH DQ1 ~ DQ4 (8,16) (OUTPUTS) VOL Hi-Z tOEZ VIH OE VIL 28 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM Upper / (Lower) Byte Read Cycle (at M5M465165Bxx only) tRC tRP tRAS VIH RAS VIL tRPC tCSH tCRP LCAS (or UCAS) tCRP tRSH tRCD VIH VIL tRPC tCAS UCAS (or LCAS) VIH tCPN VIL tRAD tASR VIH Address VIL tRAL tCAL tRAH tASC ROW ADDRESS tASR tCAH ROW ADDRESS COLUMN ADDRESS tRRH tRCS tRCH VIH W VIL DQ1 ~ DQ8 VIH (or DQ9 ~ DQ16) (INPUTS) VIL DQ1 ~ DQ8 VOH (or DQ9 ~ DQ16) (OUTPUTS) VOL Hi-Z tDZC tCDD tRDD DQ9 ~ DQ16 VIH (or DQ1 ~ DQ8) (INPUTS) VIL Hi-Z tREZ tCAC tAA tCLZ VOH DQ9 ~ DQ16 (or DQ1 ~ DQ8) (OUTPUTS) VOL tWEZ tOHR tOFF tOHC Hi-Z Hi-Z DATA VALID tRAC tDZO tOEZ tOEA tOCH tODD VIH OE VIL tORH 29 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM Upper / (Lower) Byte Write Cycle (Early Write) (at M5M465165Bxx only) tWC tRAS tRP VIH RAS VIL tCSH tCRP LCAS (or UCAS) tRCD tRSH tCRP tRPC tCRP VIH VIL tCAS UCAS (or LCAS) tRPC VIH VIL tASR VIH Address VIL tRAH tASC tASR tCAH COLUMN ADDRESS ROW ADDRESS tWCS ROW ADDRESS tWCH VIH W VIL DQ1 ~ DQ8 VIH (or DQ9 ~ DQ16) (INPUTS) VIL DQ1 ~ DQ8 VOH (or DQ9 ~ DQ16) (OUTPUTS) VOL Hi-Z tDS VIH DQ9 ~ DQ16 (or DQ1 ~ DQ8) (INPUTS) VIL VOH DQ9 ~ DQ16 (or DQ1 ~ DQ8) (OUTPUTS) VOL tDH DATA VALID Hi-Z VIH OE VIL 30 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM Upper / (Lower) Byte Write Cycle (Delayed Write) (at M5M465165Bxx only) tWC tRP tRAS VIH RAS VIL tRPC tCRP tCSH tCRP LCAS (or UCAS) tRCD tRSH VIH VIL tRPC tCRP tCAS UCAS (or LCAS) VIH VIL tASR VIH Address VIL tRAH tCAH tASC tASR ROW ADDRESS COLUMN ADDRESS ROW ADDRESS tCWL tRWL tRCS tWP VIH W VIL DQ1 ~ DQ8 VIH (or DQ9 ~ DQ16) (INPUTS) VIL VOH DQ1 ~ DQ8 (or DQ9 ~ DQ16) (OUTPUTS) VOL Hi-Z tWCH tDZC DQ9 ~ DQ16 (or DQ1 ~ DQ8) (INPUTS) VIL VIH tDS Hi-Z tDH DATA VALID tCLZ VOH DQ9 ~ DQ16 (or DQ1 ~ DQ8) (OUTPUTS) VOL Hi-Z Hi-Z tDZO tOEH tOEZ tODD VIH OE VIL 31 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM Upper / (Lower) Byte Read-Write, Upper / (Lower) Byte Read-Modify-Write Cycle. (at M5M465165Bxx only) tRWC tRAS tRP VIH RAS VIL tCSH tRCD tCRP LCAS (or UCAS) tRPC tCRP tRPC tCRP tRSH VIH VIL tCAS UCAS (or LCAS) VIH VIL tRAD tASR VIH Address VIL tRAH tASR tCAH tASC ROW ADDRESS ROW ADDRESS COLUMN ADDRESS tAWD tCWD tRCS tCWL tRWL tWP tRWD VIH W VIL DQ1 ~ DQ8 VIH (or DQ9 ~ DQ16) (INPUTS) VIL VOH DQ1 ~ DQ8 (or DQ9 ~ DQ16) (OUTPUTS) VOL Hi-Z tDH tDS tDZC VIH DQ9 ~ DQ16 (or DQ1 ~ DQ8) (INPUTS) VIL Hi-Z DATA VALID tCAC tAA tCLZ DQ9 ~ DQ16 VOH (or DQ1 ~ DQ8) (OUTPUTS) VOL Hi-Z Hi-Z DATA VALID tRAC tDZO tODD tOEA tOEH tOEZ VIH OE VIL 32 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM EDO Mode Byte Read Cycle (at M5M465165Bxx only) tRAS tRP VIH RAS VIL tCSH tCRP LCAS (or UCAS) tRSH tHPC tRCD tCP tCAS tCP tCRP tRPC tCRP VIH VIL tCAS UCAS (or LCAS) tRPC tCAS VIH VIL tRAD tASR VIH Address VIL tRAH tCPRH tASC ROW ADDRESS tASC tCAH COLUMN ADDRESS-1 tASC tCAH COLUMN ADDRESS-2 ROW ADDRESS COLUMN ADDRESS-3 tRAL tRCS tCAL tCAL tASR tCAH tRRH tRCH tCAL VIH W VIL tDZC DQ1 ~ DQ8 VIH (or DQ9 ~ DQ16) (INPUTS) VIL Hi-Z tREZ tCAC tOHR tAA DQ1 ~ DQ8 VOH (or DQ9 ~ DQ16) (OUTPUTS) VOL Hi-Z DATA VALID-2 tCLZ VIH DQ9 ~ DQ16 (or DQ1 ~ DQ8) (INPUTS) VIL tRDD tCPA tDZC tCDD Hi-Z tCAC tCAC tAA tAA tDOH tCLZ DQ9 ~ DQ16 VOH (or DQ1 ~ DQ8) (OUTPUTS) VOL Hi-Z DATA VALID-1 tRAC tDZO tWEZ tOFF tOHC DATA VALID-3 tCPA tODD tOEA tOCH tOEZ VIH OE VIL 33 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM EDO Mode Byte Write Cycle (Early Write) (at M5M465165Bxx only) tRP tRAS VIH RAS VIL tCSH tHPC tRSH tCRP LCAS (or UCAS) tRPC tCRP VIH VIL tRPC tRCD UCAS (or LCAS) tCAS tCP tCAS tCP tCAS tCRP VIH VIL tCAL tASR VIH Address VIL tRAH ROW ADDRESS tCAH tASC COLUMN ADDRESS-1 tWCS tWCH tCAL tCAH tASC COLUMN ADDRESS-2 tWCS tWCH tCAL tCAH tASC COLUMN ADDRESS-3 tWCS tWCH tDS tDH tASR ROW ADDRESS VIH W VIL tDS VIH DQ1 ~ DQ8 (or DQ9 ~ DQ16) (INPUTS) VIL DATA VALID-2 VOH DQ1 ~ DQ8 (or DQ9 ~ DQ16) (OUTPUTS) VOL Hi-Z tDS VIH DQ9 ~ DQ16 (or DQ1 ~ DQ8) (INPUTS) VIL DQ9 ~ DQ16 VOH (or DQ1 ~ DQ8) (OUTPUTS) VOL tDH tDH DATA VALID-3 DATA VALID-1 Hi-Z VIH OE VIL 34 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM EDO Mode Upper/(Lower) Byte Read-Write, Upper/(Lower) Byte Read-Modify-Write Cycle (at M5M465165Bxx only) tRAS tRP VIH RAS tRPC VIL tCSH tRWL tCRP tCRP LCAS (or UCAS) VIH VIL tRPC tRCD UCAS (or LCAS) tHPRWC tCAS tCP tCAS tCRP VIH VIL tASR VIH Address VIL tRAD tRAH ROW ADDRESS tASC tCAH tASC tASR ROW ADDRESS COLUMN ADDRESS-2 COLUMN ADDRESS-1 tAWD tCWD tRCS tCWL tCAH tAWD tCWL tRCS tCWD tWP tWP VIH W VIL tRWD tCPWD DQ1 ~ DQ8 VIH (or DQ9 ~ DQ16) (INPUTS) VIL DQ1 ~ DQ8 VOH (or DQ9 ~ DQ16) (OUTPUTS) VOL Hi-Z tDZC DQ9 ~ DQ16 VIH (or DQ1 ~ DQ8) (INPUTS) VIL tDH tDS Hi-Z tDZC Hi-Z DATA VALID-1 tCAC tAA tCLZ tCLZ Hi-Z Hi-Z DATA VALID -1 tRAC tDZO DATA VALID-2 tCAC tAA VOH DQ9 ~ DQ16 (or DQ1 ~ DQ8) (OUTPUTS) VOL tDH tDS tCPA tODD tODD tDZO tOEA tOEZ VIH Hi-Z DATA VALID -2 tOEH tOEH tOEA tOEZ OE VIL 35 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM Upper / (Lower) CAS before RAS Refresh Cycle (at M5M465165Bxx only) tRP tRP tRAS tRAS VIH RAS tRC tRC VIL tRPC LCAS (or UCAS) tCRP tRPC tCSR tRPC tRPC tCRP tCRP VIH VIL tRPC tRPC UCAS VIH (or LCAS) VIL tCRP tCSR tCHR tCHR tCPN tASR VIH Address ROW ADDRESS VIL tRSR tRCH tRHR tRSR tRHR tRCS VIH W VIL Å @ Å @ Å @ Å @ DQ1 ~ DQ8 VIH (or DQ9 ~ DQ16) (INPUTS) VIL tOFF tOHC tREZ tOHR VOH DQ1 ~ DQ8 (or DQ9 ~ DQ16) (OUTPUTS) VOL Hi-Z tOEZ tCDD tOFF VIH DQ9 ~ DQ16 (or DQ1 ~ DQ8) (INPUTS) VIL DQ9 ~ DQ16 VOH (or DQ1 ~ DQ8) (OUTPUTS) VOL Hi-Z tOEZ tODD VIH OE VIL 36 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM Upper / (Lower) Hidden Refresh Cycle (Byte Read) (at M5M465165Bxx only) (Note 31) tRC tRC tRAS tRAS tRP tRP VIH tRPC RAS VIL tRPC tRCD tCRP LCAS VIH (or UCAS) VIL tRSH tCRP tCRP tCRP UCAS VIH (or LCAS) VIL tCHR tRAD tASR VIH Address VIL tASC tRAH ROW ADDRESS tASR tCAH ROW ADDRESS COLUMN ADDRESS tRCS tRRH tRAL tRSR tRHR VIH W VIL Å @ Å @ Å @ Å @ DQ1 ~ DQ8 VIH (or DQ9 ~ DQ16) (INPUTS) VIL DQ1 ~ DQ8 VOH (or DQ9 ~ DQ16) (OUTPUTS) VOL Hi-Z tDZC DQ9 ~ DQ16 (or DQ1 ~ DQ8) VIH (INPUTS) VIL tCDD Hi-Z tOFF tREZ OFF tOHC tCAC tCLZ DQ9 ~ DQ16 VOH (or DQ1 ~ DQ8) (OUTPUTS) VOL tOHR Hi-Z DATA VALID tAA tOEZ tRAC tDZO tOEA tODD tORH VIH OE VIL 37 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM Byte Self Refresh Cycle (at M5M465165Bxx only) tRASS tRP tRPS VIH RAS VIL tRPC tCRP tRPC tCSR tRPC tCRP VIH LCAS (or UCAS) VIL tRPC UCAS VIH (or LCAS) VIL tCHS tCRP tCPN tASR VIH Address ROW ADDRESS VIL tRSR tRCH tRHR VIH W VIL Å @ Å @ Å @ Å @ DQ1 ~ DQ8 VIH (or DQ9 ~ DQ16) (INPUTS) VIL tOFF tOHC tREZ tOHR VOH DQ1 ~ DQ8 (or DQ9 ~ DQ16) (OUTPUTS) VOL Hi-Z tOEZ tCDD tOFF DQ9 ~ DQ16 VIH (or DQ1 ~ DQ8) (INPUTS) VIL DQ9 ~ DQ16 VOH (or DQ1 ~ DQ8) (OUTPUTS) VOL Hi-Z tOEZ tODD VIH OE VIL 38 MITSUBISHI ELECTRIC Jun. 1999 (Rev. 1.1) MITSUBISHI LSIs M5M467405/465405BJ,BTP -5,-6,-5S,-6S M5M467805/465805BJ,BTP -5,-6,-5S,-6S M5M465165BJ,BTP -5,-6,-5S,-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM Keep safety first in your circuit designs! • Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable,but there is always the possibility that trouble may occur with them. Trouble with semiconductors consideration to safety when making your circuit designs,with appropriate measures such as (i) placement of substitutive, auxiliary circuits,(ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials •These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer's application;they do not convey any license under any intellectual property rights,or any other rights,belonging to Mitsubishi Electric Corporation or a third party. •Mitsubishi Electric Corporation assumes no responsibility for any damage,or infringement of any third-party's rights,originating in the use of any product data,diagrams,charts or circuit application examples contained in these materials. • All information contained in these materials,including product data,diagrams and charts, represent information on products at the time of publication of these materials,and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. • Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for special applications,such as apparatus or systems for transportation,vehicular, medical,aerospace,nuclear,or undersea repeater use. •The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. •If these products or technologies are subject the Japanese export control restrictions,they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. 39 MITSUBISHI ELECTRIC Jun. 1999