KSC4010 KSC4010 Audio Power Amplifier • • • • High Current Capability : IC=6A High Power Dissipation Wide S.O.A Complement to KSA3010 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value 120 Units V 120 V 5 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) 6 A ICP Collector Current (Pulse) 12 A PC Collector Dissipation (TC=25°C) 60 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 50 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB= 120V, IE= 0 Min. - Typ. - Max. 10 Units µA IEBO Emitter Cut-off Current VEB= 5V, IC= 0 BVCEO Collector-Emitter Breakdown Voltage IC= 5A,, IB= 0 - - 10 µA 120 - - hFE DC Current Gain VCE= 5V, IC= 1A, 55 V - 160 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A, IB= 0.5A - - 2.5 V VBE(on) Base-Emitter ON Voltage VCE= 5V, IC= 5A - - 1.5 V fT Current Gain Bandwidth Product VCE= 5V, IC= 1A - 30 - MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz - 90 - pF hFE Classification Classification R O hFE 55 ~ 110 80 ~ 160 ©2001 Fairchild Semiconductor Corporation Rev. B2, Septmeber 2001 KSC4010 Typical Characteristics 1000 A 00m IB=1 =90mA IB mA IB=80 A IB=70m I =60mA 9 8 VCE=5V B IB=50mA 7 Ib=40mA 6 IB=30mA 5 IB=20mA 4 3 IB=10mA 2 hFE, DC CURRENT GAIN IC(A), COLLECTOR CURRENT 10 o TC=100 C o TC=25 C 100 1 0 0 1 2 3 4 5 6 7 8 9 10 0.1 10 1 VCE(V), COLLECTOR EMITTER VOLTAGE IC(A), COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 IC=10IB VCE=5V 9 IC(A), COLLECTOR CURRENT VCE(sat), SATURATION VOLTAGE 10 1 o 0.1 TC=25 C o TC=100 C 8 7 6 5 o TC=100 C 4 o TC=25 C 3 2 1 0.01 0.01 0.1 1 0 0.2 10 0.4 IC(A), COLLECTOR CURRENT 0.6 0.8 1.0 1.2 1.4 VBE(V), BASE EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 100 10 IC MAX. (DC) m s DC s 1 VCEO MAX 0.1 *SINGLE NONREPETITIVE o PULSE TC =25[ C] 0.01 0.1 1 10 100 PC(W), POWER DISSIPATION 10 0 m 10 IC[A], COLLECTOR CURRENT 90 IC MAX. (Pulse) 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 o VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation TC( C), CASE TEMPERATURE Figure 6. Power Derating Rev. B2, Septmeber 2001 KSC4010 Package Demensions TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 3.50 ±0.20 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 16.50 ±0.30 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. B2, Septmeber 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H4