KSC5019 KSC5019 Low Saturation • VCE(sat)=0.5V at IC=2A, IB=50mA TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 30 Units V VCES VCEO Collector-Emitter Voltage 30 V Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 2 A ICP * Collector Current (Pulse) 5 A IB Base Current 2 A PC Collector Power Dissipation 750 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * PW≤10ms, Duty Cycle≤30% Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB=30V, IE=0 Min. Typ. Max. 100 Units nA 100 nA IEBO Emitter Cut-off Current VEB=6V, IC=0 BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 10 BVEBO Emitter-Base Breakdown Voltage IE=1mA, IC=0 6 hFE1 hFE2 DC Current Gain VCE=1V, IC=0.5A VCE=1V, IC=2A VCE (sat) Collector-Emitter Saturation Voltage IC=2A, IB=50mA 0.2 0.5 VBE (on) Base Emitter On Voltage VCE=1V, IC=2A 0.86 1.5 fT Current Gain Bandwidth Product VCE=1V, IC=0.5A 150 MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz 27 pF 140 70 V V 600 200 V V hFE Classification Classification L M N P hFE 140 ~ 240 200 ~ 330 300 ~ 450 420 ~ 600 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC5019 Typical Characteristics 10,000 IB = 50mA IB = 40mA EMITTER COMMON VCE =1V EMITTER COMMON o Ta=25 C IB = 30mA 4 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 5 IB = 20mA 3 2 IB = 10mA IB = 5mA 1 1,000 100 10 IB = 0mA 1 0.01 0 0 1 2 3 4 5 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 2. DC current Gain 1 5 EMITTER COMMON IC /IB=40 EMITTER COMMON VCE=1V IC[A], COLLECTOR CURRENT VCE(sat)[V], SATURATION VOLTAGE 10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic 0.1 0.01 0.1 4 3 2 1 0 0.0 1 0.2 0.4 0.6 0.8 1.0 VBE[V], BASE-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10 1000 1m IC MAX. (Pulse) s 0 IC MAX. (DC) PC[mW], POWER DISSIPATION 10 s m 10 ms 1 0.1 VCEO MAX. IC[A], COLLECTOR CURRENT 1 0.01 0.01 800 600 400 200 0 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2002 Fairchild Semiconductor Corporation 100 0 50 100 150 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A2, September 2002 KSC5019 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1