MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714CP low-noise HEMT(High Electron Mobility OUTLINE DRAWING Unit:millimeters (0.6) Transistor) is designed for use in L to Ku band amplifiers. 1 The plastic mold package offer high cost performance, and has a configuration suitable for microstrip circuits. 2 The MGF4714CP is mounted in Super 12 tape. FEATURES 2 • Low noise figure NFmin.=1.00dB(MAX.) (ø1.2) @f=12GHz 3 • High associated gain Gs=11.0dB(MIN.) 0.5±0.1 @f=12GHz APPLICATION 2.2±0.2 L to Ku band low noise amplifiers. (8˚) (R0.1) (R0.1) QUALITY GRADE • GG 4.0±0.3 RECOMMENDED BIAS CONDITIONS • VDS=2V,ID=10mA • Refer to Bias Procedure 1 Gate 2 Source 3 Drain GD-22 ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature Ratings -4 -4 60 50 125 -65 to +125 Unit V V mA mW ˚C ˚C ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol Parameter V(BR)GDO IGSS IDSS VGS(off) gm GS NFmin. Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage Transconductance Associated gain Minimum noise figure Test conditions IG=-10µA VGS=-2V,VDS=0V VGS=0V,VDS=2V VDS=2V,ID=500µA VDS=2V,ID=10mA VDS=2V,ID=10mA f=12GHz Min -3 – 15 -0.1 – 11.0 – Limits Typ – – – – 55 – – Max – 50 60 -1.5 – – 1.00 Unit V µA mA V mS dB dB Nov. ´97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT TYPICAL CHARACTERISTICS (Ta=25˚C) ID vs. VGS ID vs. VDS 50 60 Ta=25˚C VDS=2V Ta=25˚C VGS=-0.1V/STEP 50 40 40 30 VGS=0V 30 20 20 10 10 0 -1.0 -0.5 0 GATE TO SOURCE VOLTAGE VGS(V) 0 1.0 2.0 3.0 4.0 5.0 DRAIN TO SOURCE VOLTAGE VDS(V) NF & Gs vs. ID (f=12GHz) 14 Ta=25˚C VDS=2V 13 GS 12 1.0 11 0.9 10 0.8 0.7 NF 0.6 0.5 0 5 10 15 20 25 30 ID (mA) Nov. ´97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT S PARAMETERS Freq. (GHz) (Ta=25˚C,VDS=2V,ID=10mA) S11 S21 S12 S22 1 2 3 4 5 6 7 8 Mag. 0.990 0.952 0.912 0.858 0.798 0.731 0.681 0.645 Angle -16.5 -32.9 -48.0 -63.8 -81.0 -98.1 -115.1 -128.8 Mag. 5.491 5.292 5.146 4.963 4.777 4.497 4.217 3.951 Angle 162.9 147.0 133.9 119.4 104.3 89.9 75.9 64.8 Mag. 0.022 0.040 0.057 0.073 0.084 0.095 0.099 0.101 Angle 64.0 66.1 59.0 47.0 36.9 27.8 19.2 13.4 Mag. 0.655 0.630 0.596 0.546 0.493 0.444 0.397 0.364 Angle -13.6 -26.0 -37.2 -49.8 -64.5 -79.4 -94.6 -107.2 9 10 11 12 13 14 15 16 17 18 0.615 0.591 0.573 0.564 0.570 0.575 0.578 0.580 0.585 0.593 -143.3 -157.5 -171.9 174.9 163.1 155.1 146.3 137.0 127.2 118.1 3.683 3.450 3.225 3.027 2.833 2.666 2.529 2.410 2.310 2.193 52.8 41.1 29.5 18.5 8.3 -0.7 -9.9 -20.3 -30.2 -40.3 0.102 0.102 0.099 0.098 0.096 0.095 0.092 0.094 0.091 0.093 7.2 1.4 -4.0 -9.8 -12.9 -14.1 -16.6 -20.2 -25.1 -31.4 0.344 0.335 0.338 0.341 0.356 0.375 0.395 0.432 0.454 0.476 -121.6 -136.7 -152.7 -166.5 -178.1 175.1 166.3 158.1 149.5 143.2 NOISE PARAMETERS Freq. (GHz) 12 (Ta=25˚C,VDS=2V,ID=10mA) opt Magn. 0.32 Angle(deg.) 163 Rn (Ω) NFmin. (dB) Gs (dB) 2.52 0.65 12.5 Nov. ´97