MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. InGaAs HEMT Chip DESCRIPTION OUTLINE DRAWING The MGFC4419G low-noise HEMT(High electron Mobility Transistor) is designed for use in X to K band amplifiers. FEATURES (TARGET) Low noise figure NFmin,=0.5 dB (MAX.) @ f=12GHz High associated gain Gs=12.0 dB (MIN.) @ f=12GHz APPLICATION X to K band amplifiers. RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10mA Refer to Bias Procedure ( Ta=25°C ) ABSOLUTE MAXIMUM RATINGS Symbol < Keep safety first in your circuit designs! > Parameter Ratings Unit VGDO Gate to drain voltage -4 V VGSO Gate to source voltage -4 V ID Drain current 60 mA PT Total power dissipation 50 mW Tch Channel temperature 125 °C Tstg Storage temperature -65 ~ +125 °C Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. ELECTRICAL CHARACTERISTICS Symbol ( Ta=25°C ) Test conditions Parameter Limits Min. Typ. Max Unit V(BR)GDO Gate to drain breakdown voltage IG= -10µA -3 — — IGSS IDSS Gate to source leakage current Saturated drain current VGS=2V, VDS=0V — — 50 V µA VDS=2V, VGS=0V — — 60 mA VGS (off) gm Gate to Source cut-off voltage Transconductance VDS=2V, ID=500µA VDS=2V, ID=10mA -0.1 — — 75 -1.5 — V mS Gs Associated gain NFmin Minimum noise figure VDS=2V, ID=10mA f=12GHz 12 — 13.5 — — 0.5 dB dB MITSUBISHI ELECTRIC as of Jan.'98 (1/4) MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. InGaAs HEMT Chip Typical Characteristics MITSUBISHI ELECTRIC as of Jan.'98 (2/4) MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. InGaAs HEMT Chip Typical Characteristics S Parameters (Ta=25 deg.C , VDS=2V , ID=10mA ) f S11 S21 S12 S22 (GHz) Magn. Angle Magn. Angle Magn. Angle Magn. 1 0.994 -12.2 5.908 169.6 0.019 82.3 2 0.976 -24.3 5.790 159.4 0.037 74.9 3 0.950 -36.0 5.608 149.5 0.054 4 0.917 -47.3 5.380 140.0 5 0.880 -58.1 5.123 131.1 6 0.842 -68.4 4.854 7 0.805 -78.2 8 0.771 9 MSG/MAG K Angle (dB) 0.660 -8.9 24.9 0.017 0.645 -17.6 21.9 0.038 67.7 0.623 -26.0 20.1 0.065 0.069 61.1 0.595 -34.0 18.9 0.100 0.083 54.9 0.564 -41.6 17.9 0.143 122.7 0.094 49.3 0.531 -48.7 17.1 0.192 4.585 114.8 0.103 44.2 0.498 -55.5 16.5 0.246 -87.6 4.324 107.3 0.111 39.6 0.466 -61.9 15.9 0.304 0.739 -96.5 4.076 100.3 0.117 35.4 0.436 -68.1 15.4 0.364 10 0.711 -104.9 3.843 93.7 0.122 31.7 0.407 -74.1 15.0 0.425 11 0.687 -113.1 3.626 87.4 0.127 28.3 0.381 -79.9 14.6 0.486 12 0.666 -120.9 3.426 81.4 0.130 25.3 0.357 -85.6 14.2 0.546 13 0.648 -128.3 3.241 75.7 0.133 22.5 0.335 -91.4 13.9 0.604 14 0.634 -135.5 3.071 70.2 0.136 20.0 0.316 -97.2 13.6 0.660 15 0.622 -142.3 2.914 64.9 0.138 17.7 0.298 -103.0 13.3 0.713 16 0.613 -148.9 2.770 59.8 0.139 15.6 0.283 -109.0 13.0 0.763 17 0.607 -155.2 2.636 54.8 0.141 13.8 0.270 -115.1 12.7 0.810 18 0.603 -161.3 2.513 50.0 0.143 12.0 0.259 -121.4 12.5 0.853 19 0.600 -167.0 2.398 45.3 0.144 10.5 0.250 -127.8 12.2 0.892 20 0.600 -172.6 2.292 40.7 0.145 9.0 0.243 -134.3 12.0 0.927 21 0.601 -177.9 2.193 36.3 0.146 7.7 0.238 -140.9 11.8 0.958 22 0.603 177.0 2.100 31.9 0.148 6.4 0.235 -147.5 11.5 0.984 23 0.606 172.2 2.013 27.7 0.149 5.3 0.234 -154.1 10.8 1.006 24 0.610 167.5 1.931 23.5 0.151 4.2 0.235 -160.6 10.1 1.024 25 0.616 163.0 1.855 19.4 0.152 3.1 0.238 -166.9 9.7 1.037 26 0.621 158.7 1.782 15.4 0.154 2.1 0.242 -173.0 9.3 1.045 Noise Parameters (Ta=25 deg.C , VDS=2V , ID=10mA ) f Gopt. Rn NFmin. Gs (GHz) Magn. Angle (W) (dB) (dB) 4 0.71 33.0 18.0 0.24 18.3 8 0.62 61.1 14.6 0.35 15.9 12 0.55 87.0 12.2 0.45 13.5 18 0.48 123.8 10.3 0.63 9.9 22 0.45 148.1 11.0 0.78 7.5 26 0.45 173.2 12.4 0.98 5.1 MITSUBISHI ELECTRIC as of Jan.'98 (3/4) MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. InGaAs HEMT Chip TECHNICAL NOTE 1. Characteristics and quality assurance 1.1 Electrical characteristics a. DC characteristics on spec. sheet show the test conditions and values using wafer-prober. DC characteristics are tested 100% devices. b. RF characteristics are tested using the corresponding packaged FET. When more than 80% 0f the samples satisfy the value of RF characteristics on spec. sheet , that wafer is accepted for shipment. 1.2 Quality assurance and reliability a. Mechanical characteristics are tested using corresponding package with sampling test. b. Visual inspection is complied with MITSUBISHI's technical note. c. The electrical characteristics and the quality assurance test are sampling test. And so the shipped chips are contained some sub-standard articles. d. After opening the packing , the quality of chips are influenced with storage conditions. Our recommended storage conditions and period is as follows: Ta=25±3 deg.C MITSUBISHI's packing + Desiccator 6 months Opened packing + Desiccator 2 months In the desiccator , leave the chips in the pack keeping up-side-up and store in a clean and dry enviroment , preferable dry N2. e. Packing quantity Standard : 400 pcs. or 50 pcs. / each waffle pack Custom order : 25~400 pcs. / each waffle pack by 25 pcs. step In case of long storage exceeding 2 months at customer after opening the packing , total quantity of order shall be separated and small unit quantity of each orders shall be custome ordered. In this case , we may prepare special spec. No. for each customer. (ex . -21,-22 ) 1.3 Others The device shall not be returned in the following case. a. Inadequate storage b. Mishandling c. Incorrect die/wire bonding d. RF characteristics failure rate less than 30%. Table.1. Standard specifications 2. Ordering information Spec.No. Visual Grade Unit quantity for The classification with Visual grade & packing quantity is listed in Table.1. MITSUBISHI ELECTRIC each waffle packe -A01 A -A02 B -A03 C -A11 A -A12 B -A13 C 400 pcs 25 pcs as of Jan.'98 (4/4) MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. InGaAs HEMT Chip S Parameters for MGFC4419G (Simulated Value) (Conditions:VDS=2V,IDS=10mA,Ta=25C) f (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 S11 Magn. 0.994 0.977 0.951 0.918 0.882 0.844 0.808 0.773 0.742 0.713 0.688 0.667 0.649 0.634 0.623 0.614 0.607 0.603 0.600 0.599 0.600 0.602 0.606 0.610 0.615 0.621 0.627 0.634 0.641 0.649 0.657 0.664 0.672 0.680 0.688 0.696 0.703 0.710 0.717 0.724 Angle -12.1 -24.1 -35.8 -47.0 -57.8 -68.1 -77.9 -87.2 -96.2 -104.7 -112.9 -120.7 -128.2 -135.4 -142.4 -149.0 -155.4 -161.5 -167.3 -172.9 -178.3 176.6 171.7 167.0 162.5 158.2 154.0 150.1 146.3 142.6 139.1 135.8 132.5 129.4 126.4 123.4 120.6 117.9 115.3 112.8 S21 Magn. 5.823 5.709 5.534 5.314 5.066 4.804 4.542 4.286 4.043 3.813 3.599 3.401 3.218 3.049 2.893 2.750 2.616 2.493 2.379 2.272 2.173 2.080 1.993 1.911 1.833 1.760 1.691 1.626 1.564 1.504 1.448 1.394 1.343 1.293 1.246 1.201 1.158 1.117 1.078 1.040 S12 Angle 169.7 159.5 149.6 140.2 131.3 122.9 114.9 107.4 100.4 93.7 87.4 81.3 75.6 70.0 64.7 59.5 54.5 49.6 44.9 40.3 35.8 31.4 27.1 22.8 18.7 14.6 10.7 6.8 3.0 -0.8 -4.5 -8.1 -11.6 -15.0 -18.4 -21.7 -24.9 -28.1 -31.2 -34.2 Mag. 0.019 0.037 0.054 0.070 0.083 0.094 0.103 0.111 0.117 0.123 0.127 0.130 0.133 0.135 0.137 0.139 0.140 0.141 0.142 0.143 0.144 0.145 0.146 0.147 0.148 0.150 0.151 0.152 0.154 0.155 0.157 0.159 0.161 0.163 0.166 0.168 0.170 0.173 0.175 0.178 S22 Angle 82.3 74.8 67.5 60.8 54.5 48.8 43.5 38.8 34.5 30.6 27.0 23.8 20.9 18.2 15.8 13.5 11.5 9.6 7.9 6.3 4.9 3.5 2.2 1.1 -0.1 -1.1 -2.1 -3.1 -4.1 -5.1 -6.0 -7.0 -8.0 -9.0 -10.0 -11.0 -12.1 -13.2 -14.3 -15.4 MITSUBISHI ELECTRIC Mag. 0.666 0.652 0.630 0.602 0.570 0.536 0.502 0.469 0.438 0.408 0.380 0.355 0.332 0.311 0.293 0.277 0.263 0.251 0.242 0.235 0.230 0.227 0.227 0.228 0.232 0.237 0.243 0.251 0.261 0.271 0.281 0.293 0.305 0.317 0.330 0.343 0.356 0.369 0.382 0.394 Angle -8.8 -17.4 -25.7 -33.7 -41.2 -48.3 -55.1 -61.6 -67.7 -73.7 -79.6 -85.5 -91.3 -97.3 -103.4 -109.6 -116.0 -122.6 -129.4 -136.3 -143.3 -150.4 -157.3 -164.2 -170.8 -177.2 176.8 171.0 165.6 160.5 155.7 151.1 146.9 142.8 139.0 135.4 132.0 128.7 125.6 122.6 K 0.05 0.10 0.16 0.21 0.26 0.31 0.36 0.41 0.46 0.51 0.56 0.61 0.66 0.71 0.75 0.80 0.84 0.88 0.92 0.95 0.99 1.02 1.04 1.07 1.09 1.11 1.13 1.14 1.15 1.15 1.16 1.16 1.16 1.15 1.15 1.14 1.13 1.12 1.11 1.10 GMAX (dB) 24.8 21.8 20.1 18.8 17.9 17.1 16.4 15.9 15.4 14.9 14.5 14.2 13.8 13.5 13.2 13.0 12.7 12.5 12.2 12.0 11.8 10.8 10.1 9.5 9.1 8.7 8.3 8.0 7.7 7.5 7.2 7.0 6.8 6.6 6.4 6.3 6.1 6.0 5.8 5.7 as of Jan.'98