MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF431xG Super Low Noise InGaAs HEMT DESCRIPTION The MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. OUTLINE DRAWING FEATURES Low noise figure @ f=12GHz MGF4316G : NF min.=0.80dB (MAX.) MGF4319G : NF min.=0.50dB (MAX.) High associated gain Gs=12.0 dB (MIN.) @ f=12GHz APPLICATION L to K band low noise amplifiers. QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10mA Refer to Bias Procedure GD-4 ABSOLUTE MAXIMUM RATINGS Symbol ( Ta=25°C ) Parameter < Keep safety first in your circuit designs! > Ratings Unit Mitsubishi Electric Corporation puts the maximum effort into VGDO Gate to drain voltage -4 V VGSO Gate to source voltage -4 V ID Drain current 60 mA PT Total power dissipation 50 mW Tch Channel temperature 125 °C Tstg Storage temperature -65 ~ +125 °C making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. ELECTRICAL CHARACTERISTICS Symbol ( Ta=25°C ) Parameter Test conditions Limits Min. Typ. Max Unit V(BR)GDO Gate to drain breakdown voltage IG= -10µA -3 — — V IGSS Gate to source leakage current VGS= -2V, VDS=0V — — 50 µA IDSS Saturated drain current VGS=0V, VDS=2V 15 — 60 mA VGS (off) Gate to Source cut-off voltage VDS=2V, ID=500µA -0.1 — -1.5 V gm Transconductance VDS=2V, ID=10mA — 75 — mS Gs Associated gain VDS=2V, ID=10mA, f=12GHz 12 13.5 — dB NFmin Minimum noise figure VDS=2V, ID=10mA, f=12GHz MGF4316G MGF4319G — — 0.8 — — 0.5 Rth (ch-a) Thermal resistance ∆Vf method — 625 — *1 dB ˚C/W *1 : Channel to ambient MITSUBISHI ELECTRIC as of Apr.'98 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF431xG Super Low Noise InGaAs HEMT Typical Characteristics MITSUBISHI ELECTRIC as of Apr.'98 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF431xG Super Low Noise InGaAs HEMT Typical Characteristics S Parameters (Ta=25˚C , VDS=2V , ID=10mA ) f S11 S21 S12 S22 MSG/MAG K (GHz) Magn. Angle Magn. Angle Magn. Angle Magn. Angle (dB) 1 0.990 -22.3 5.775 158.1 0.020 71.9 0.533 -19.2 28.8 0.10 2 0.967 -40.6 5.585 140.6 0.035 61.8 0.514 -33.4 26.5 0.19 3 0.925 -53.2 5.401 128.9 0.051 53.3 0.489 -42.9 24.3 0.27 4 0.874 -70.9 5.161 111.8 0.064 42.4 0.457 -58.2 21.6 0.35 5 0.831 -88.8 4.899 96.8 0.075 29.3 0.424 -71.6 19.8 0.43 6 0.783 -105.7 4.626 80.8 0.083 19.0 0.391 -87.5 18.1 0.50 7 0.743 -120.6 4.316 67.9 0.087 9.1 0.369 -100.6 16.8 0.57 8 0.706 -132.1 4.100 56.4 0.090 4.1 0.357 -110.8 15.9 0.64 9 0.682 -144.7 3.887 43.2 0.093 -6.4 0.357 -122.3 15.1 0.69 10 0.670 -159.1 3.765 30.1 0.094 -14.3 0.351 -133.0 14.7 0.72 11 0.639 -171.8 3.617 17.5 0.095 -24.4 0.339 -143.5 14.0 0.80 12 0.617 175.3 3.526 4.5 0.096 -33.5 0.329 -154.0 13.5 0.86 13 0.591 163.1 3.421 -8.1 0.094 -42.5 0.328 -163.9 13.0 0.91 14 0.571 152.9 3.349 -17.4 0.094 -50.9 0.328 -171.3 12.7 0.95 15 0.565 140.1 3.333 -29.6 0.096 -61.1 0.343 179.5 12.7 0.96 16 0.560 125.8 3.349 -44.4 0.098 -74.1 0.351 170.5 12.7 0.98 17 0.533 109.8 3.356 -59.9 0.101 -88.8 0.337 161.8 12.5 1.01 18 0.484 91.2 3.337 -77.0 0.104 -105.1 0.310 151.6 12.1 1.11 Noise Parameters (Ta=25˚C , VDS=2V , ID=10mA ) G opt. NFmin.(dB) f (GHz) Magn. Angle Rn (Ω) 4 0.76 49 12.5 0.31 0.24 18.3 8 0.59 95 4.7 0.47 0.35 15.9 12 0.48 139 2.3 0.60 0.45 13.5 14 0.41 166 1.8 0.69 0.50 12.3 18 0.34 -142 1.5 0.88 0.61 9.9 MGF4316G MGF4319G Gs (dB) MITSUBISHI ELECTRIC as of Apr.'98