Order this document by MPSW45/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 BASE 2 *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Rating Symbol MPSW45 MPSW45A Unit Collector – Emitter Voltage VCES 40 50 Vdc Collector – Base Voltage VCBO 50 60 Vdc Emitter – Base Voltage 2 VEBO 12 12 Vdc Collector Current — Continuous IC 1.0 1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 Watts mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 Watts mW/°C TJ, Tstg – 55 to +150 °C Operating and Storage Junction Temperature Range 1 3 CASE 29–05, STYLE 1 TO–92 (TO–226AE) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 125 °C/W Thermal Resistance, Junction to Case RqJC 50 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max 40 50 — — 50 60 — — 12 — — — 100 100 — 100 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 100 µAdc, VBE = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CES MPSW45 MPSW45A V(BR)CBO MPSW45 MPSW45A Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) Vdc V(BR)EBO Vdc ICBO MPSW45 MPSW45A Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO Vdc nAdc nAdc Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 25,000 15,000 4,000 150,000 — — Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 200 mAdc, VCE = 5.0 Vdc) (IC = 500 mAdc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) hFE — Collector – Emitter Saturation Voltage (IC = 1.0 Adc, IB = 2.0 mAdc) VCE(sat) — 1.5 Vdc Base– Emitter Saturation Voltage (IC = 1.0 Adc, IB = 2.0 mAdc) VBE(sat) — 2.0 Vdc Base – Emitter On Voltage (IC = 1.0 Adc, VCE = 5.0 Vdc) VBE(on) — 2.0 Vdc fT 100 — MHz Ccb — 6.0 pF SMALL– SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 500 2.0 BANDWIDTH = 1.0 Hz RS ≈ 0 i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 200 BANDWIDTH = 1.0 Hz 100 10 µA 50 100 µA 20 IC = 1.0 mA 10 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 µA 0.1 0.07 0.05 10 µA 0.03 0.02 10 20 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 50 100 200 50 k 100 k Figure 3. Noise Current 14 200 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 2. Noise Voltage 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) IC = 10 µA 70 50 100 µA 30 20 1.0 mA 10 1.0 2.0 10 10 µA 8.0 100 µA 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) 500 100 0 Figure 4. Total Wideband Noise Voltage Motorola Small–Signal Transistors, FETs and Diodes Device Data 0 1.0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) 500 100 0 Figure 5. Wideband Noise Figure 3 SMALL–SIGNAL CHARACTERISTICS 4.0 |h fe |, SMALL–SIGNAL CURRENT GAIN 20 C, CAPACITANCE (pF) TJ = 25°C 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 200 k hFE, DC CURRENT GAIN TJ = 125°C 25°C 30 k 20 k 10 k 7.0 k 5.0 k – 55°C VCE = 5.0 V 3.0 k 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 RθV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 0.8 VCE(sat) @ IC/IB = 1000 0.6 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 10. “On” Voltages 4 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 TJ = 25°C 2.5 IC = 10 mA 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (µA) 500 1000 Figure 9. Collector Saturation Region 1.6 10 2.0 3.0 Figure 8. DC Current Gain 5.0 7.0 1.0 Figure 7. High Frequency Current Gain VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 100 k 70 k 50 k VCE = 5.0 V f = 100 MHz TJ = 25°C 500 – 1.0 – 2.0 *APPLIES FOR IC/IB ≤ hFE/3.0 25°C TO 125°C *RqVC FOR VCE(sat) – 55°C TO 25°C – 3.0 25°C TO 125°C – 4.0 qVB FOR VBE – 5.0 – 55°C TO 25°C – 6.0 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 Figure 11. Temperature Coefficients Motorola Small–Signal Transistors, FETs and Diodes Device Data r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 10 5.0 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 300 200 FIGURE A 1.0 ms tP TA = 25°C TC = 25°C 100 µs PP 1.0 s 100 70 50 PP t1 30 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 20 10 0.4 0.6 1/f DUTY CYCLE 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area 40 + t1 f + ttP1 PEAK PULSE POWER = PP Design Note: Use of Transient Thermal Resistance Data Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. A B R SEATING PLANE P L F DIM A B C D F G H J K L N P R V K X X D G H J V 1 2 3 N C SECTION X–X N CASE 029–05 (TO–226AE) ISSUE AD INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.135 ––– 0.135 ––– MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.56 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 3.43 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 MFAX: [email protected] – TOUCHTONE 602–244–6609 INTERNET: http://Design–NET.com ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ *MPSW45/D* MPSW45/D Motorola Small–Signal Transistors, FETs and Diodes Device Data