Order this document by 2N3905/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO 40 Vdc Emitter – Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Power Dissipation @ TA = 60°C PD 250 mW Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Operating and Storage Junction Temperature Range 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS(1) Symbol Max Unit Thermal Resistance, Junction to Ambient Characteristic RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector – Emitter Breakdown Voltage (2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 — Vdc Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 40 — Vdc Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 — Vdc Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL — 50 nAdc Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX — 50 nAdc OFF CHARACTERISTICS 1. Indicates Data in addition to JEDEC Requirements. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. v v Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 2N3905 2N3906 30 60 — — (IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 40 80 — — (IC = 10 mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 50 100 150 300 (IC = 50 mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 30 60 — — (IC = 100 mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 15 30 — — — — 0.25 0.4 0.65 — 0.85 0.95 200 250 — — Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) hFE Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc VCE(sat) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) — Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 2N3905 2N3906 MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo — 4.5 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 10.0 pF 0.5 2.0 8.0 12 0.1 0.1 5.0 10 50 100 200 400 1.0 3.0 40 60 — — 5.0 4.0 td — 35 ns tr — 35 ns 2N3905 2N3906 ts — — 200 225 ns 2N3905 2N3906 tf — — 60 75 ns Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz) kΩ hie 2N3905 2N3906 X 10– 4 hre 2N3905 2N3906 hfe 2N3905 2N3906 — mmhos hoe 2N3905 2N3906 NF 2N3905 2N3906 dB SWITCHING CHARACTERISTICS Delay Time Rise Time ((VCC = 3.0 Vdc,, VBE = 0.5 Vdc,, IC = 10 mAdc, IB1 = 1.0 mAdc) Storage Time Fall Time 1. Pulse Test: Pulse Width 2 (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAd v 300 ms; Duty Cycle v 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data 3V 3V < 1 ns +9.1 V 275 275 < 1 ns 10 k +0.5 V 10 k 0 CS < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% CS < 4 pF* 1N916 10 < t1 < 500 ms DUTY CYCLE = 2% t1 10.9 V * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 10 5000 7.0 3000 2000 Cobo 5.0 Q, CHARGE (pC) CAPACITANCE (pF) TJ = 25°C TJ = 125°C Cibo 3.0 2.0 VCC = 40 V IC/IB = 10 1000 700 500 300 200 QT QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) 100 70 50 20 30 40 1.0 2.0 3.0 Figure 3. Capacitance 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 Figure 4. Charge Data 500 500 IC/IB = 10 300 200 VCC = 40 V IB1 = IB2 300 200 tr @ VCC = 3.0 V 15 V 30 20 t f , FALL TIME (ns) TIME (ns) IC/IB = 20 100 70 50 100 70 50 30 20 IC/IB = 10 40 V 10 7 5 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn – On Time Figure 6. Fall Time Motorola Small–Signal Transistors, FETs and Diodes Device Data 200 3 TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = – 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 SOURCE RESISTANCE = 200 W IC = 1.0 mA 4.0 f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 3.0 SOURCE RESISTANCE = 2.0 k IC = 50 mA 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 1.0 0 0.1 0.2 0.4 IC = 1.0 mA 10 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.0 IC = 0.5 mA 8 6 IC = 50 mA 4 IC = 100 mA 2 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 0 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) Figure 7. 40 100 Figure 8. h PARAMETERS (VCE = – 10 Vdc, f = 1.0 kHz, TA = 25°C) 100 hoe, OUTPUT ADMITTANCE (m mhos) h fe , DC CURRENT GAIN 300 200 100 70 50 70 50 30 20 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5 5.0 7.0 10 0.1 0.2 Figure 9. Current Gain 10 h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) h ie , INPUT IMPEDANCE (k OHMS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 11. Input Impedance 4 5.0 7.0 10 Figure 10. Output Admittance 20 0.3 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 12. Voltage Feedback Ratio Motorola Small–Signal Transistors, FETs and Diodes Device Data h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 – 55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 70 50 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 13. DC Current Gain 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 14. Collector Saturation Region TJ = 25°C V, VOLTAGE (VOLTS) 0.8 q V , TEMPERATURE COEFFICIENTS (mV/ °C) 1.0 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 Figure 15. “ON” Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data 1.0 0.5 qVC FOR VCE(sat) 0 +25°C TO +125°C – 55°C TO +25°C – 0.5 +25°C TO +125°C – 1.0 – 55°C TO +25°C qVB FOR VBE(sat) – 1.5 – 2.0 0 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 180 200 Figure 16. Temperature Coefficients 5 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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