MOTOROLA Order this document by MAC223/D SEMICONDUCTOR TECHNICAL DATA MAC223 Series MAC223A Series Triacs Silicon Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications such as lighting sysjtems, heater controls, motor controls and power supplies; or wherever full-wave silicongate-controlled devices are needed. • Off-State Voltages to 800 Volts • All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Thermal Resistance and High Heat Dissipation • Gate Triggering Guaranteed in Three Modes (MAC223 Series) or Four Modes (MAC223A Series) TRIACs 25 AMPERES RMS 200 thru 800 VOLTS MT2 MT1 G CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25° unless otherwise noted.) Rating Symbol Peak Repetitive Off-State Voltage (TJ = –40 to 125°C)(1) (1/2 Sine Wave 50 to 60 Hz, Gate Open) VDRM On-State RMS Current (TC = 80°C) (Full Cycle Sine Wave 50 to 60 Hz) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = 80°C, preceded and followed by rated current) p 2 µs) Peak Gate Voltage (t p 2 µs) Peak Gate Power (t p 2 µs) Peak Gate Current (t Average Gate Power (TC = 80°C, t p 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Mounting Torque Unit Volts 200 400 600 800 MAC223-4, MAC223A4 MAC223-6, MAC223A6 MAC223-8, MAC223A8 MAC223-10, MAC223A10 Circuit Fusing (t = 8.3 ms) Value IT(RMS) 25 Amps ITSM 250 Amps I2t 260 A2s IGM 2 Amps VGM ±10 Volts PGM 20 Watts PG(AV) 0.5 Watts TJ –40 to 125 °C Tstg –40 to 150 °C — 8 in. lb. 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data Motorola, Inc. 1995 1 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 1.2 °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.) Characteristic Symbol Peak Blocking Current(1) (VD = Rated VDRM) TJ = 25°C TJ = 125°C IDRM Peak On-State Voltage (ITM = 35 A Peak, Pulse Width VTM p 2 ms, Duty Cycle p 2%) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2( + ), G( + ); MT2( – ), G( – ); MT( + ), G( – ) MT2( – ), G( + ) “A” SUFFIX ONLY IGT Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(–), G(–); MT(+), G(–) MT2(–), G(+) “A” SUFFIX ONLY (VD = Rated VDRM, TJ = 125°C, RL = 10 k) MT(+), G(+); MT2(–), G(–); MT2(+), G(–) MT2(–), G(+) “A” SUFFIX ONLY VGT Min Typ Max Unit — — — — 10 2 µA mA — 1.4 1.85 Volts mA — — 20 30 50 75 Volts — — 0.2 1.1 1.3 0.4 2 2.5 — 0.2 0.4 — Holding Current (VD = 12 V, ITM = 200 mA, Gate Open) IH — 10 50 mA Gate Controlled Turn-On Time (VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA) tgt — 1.5 — µs dv/dt — 40 — V/µs dv/dt(c) — 5 — V/µs Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, TC = 125°C) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 35 A Peak, Commutating di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C) FIGURE 1 – RMS CURRENT DERATING 125 115 105 95 85 75 0 5.0 10 15 20 25 IT(RMS), RMS ON-STATE CURRENT (AMPS) 2 FIGURE 2 – ON-STATE POWER DISSIPATION PD , AVERAGE POWER DISSIPATION (WATTS) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) 1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage applied exceeds the rated blocking voltage. 40 30 20 10 0 0 5.0 10 15 20 25 IT(RMS), RMS ON-STATE CURRENT (AMPS) Motorola Thyristor Device Data FIGURE 4 – GATE TRIGGER VOLTAGE NORMALIZED GATE VOLTAGE NORMALIZED GATE CURRENT FIGURE 3 – GATE TRIGGER CURRENT 3.0 2.0 VD = 12 V RL = 100 Ω 1.0 0.5 0.3 0.2 0.1 –60 –40 –20 0 20 40 60 80 100 120 3.0 2.0 1.0 0.5 0.3 0.2 0.1 –60 140 VD = 12 V RL = 100 Ω –40 –20 TJ, JUNCTION TEMPERATURE (°C) 0.5 0.3 0.2 0.1 –60 –40 –20 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (°C) Motorola Thyristor Device Data 100 120 140 i TM, INSTANTANEOUS ON-STATE CURRENT (AMPS) NORMALIZED HOLD CURRENT ITM = 200 mA Gate Open 1.0 20 40 60 80 100 120 140 FIGURE 6 – TYPICAL ON-STATE CHARACTERISTICS FIGURE 5 – HOLD CURRENT 2.0 0 TJ, JUNCTION TEMPERATURE (°C) 200 100 50 10 TJ = 25°C 5.0 1.0 0.5 0.1 0 1.0 2.0 3.0 4.0 VTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 3 PACKAGE DIMENSIONS –T– B F T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C S 4 Q A 1 2 3 STYLE 4: PIN 1. 2. 3. 4. U H MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 K Z R L V J G D DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.055 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.39 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 N CASE 221A-04 (TO–220AB) Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *MAC223/D* MAC223/D