MOTOROLA Order this document by MCR218/D SEMICONDUCTOR TECHNICAL DATA MCR218 Series Thyristors Silicon-Controlled Rectifiers . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. SCRs 8 AMPERES RMS 50 thru 800 VOLTS • Glass-Passivated Junctions • Blocking Voltage to 800 Volts • TO-220 Construction — Low Thermal Resistance, High Heat Dissipation and Durability G A K CASE 221A-04 (TO-220AB) STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Voltage(1) (TJ = 25 to 125°C, Gate Open) MCR218-2 MCR218-3 MCR218-4 MCR218-6 MCR218-8 MCR218-10 Forward Current RMS (All Conduction Angles) Peak Forward Surge Current (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power Forward Average Gate Power Forward Peak Gate Current Operating Junction Temperature Range Storage Temperature Range Symbol VDRM VRRM Value Unit Volts 50 100 200 400 600 800 IT(RMS) 8 Amps ITSM 80 Amps I2t 26 A2s PGM 5 Watts PG(AV) 0.5 Watt IGM 2 Amps TJ –40 to +125 °C Tstg –40 to +150 °C 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data Motorola, Inc. 1995 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 2 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.) Characteristic Symbol Peak Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) Min Typ Max Unit — — — — 10 2 µA mA IDRM, IRRM TJ = 25°C TJ = 125°C Peak On-State Voltage(1) (ITM = 16 A Peak) VTM — 1.5 1.8 Volts Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ohms) IGT — 10 25 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ohms) (Rated VDRM, RL = 1000 Ohms, TJ = 125°C) VGT — 0.2 — — 1.5 — IH — 16 30 mA dv/dt — 100 — V/µs Holding Current (Anode Voltage = 24 Vdc, Peak Initiating On-State Current = 0.5 A, 0.1 to 10 ms Pulse, Gate Trigger Source = 7 V, 20 Ohms) Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) 1. Pulse Test: Pulse Width = 1 ms, Duty Cycle Volts p 2%. TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) FIGURE 1 — CURRENT DERATING 125 115 α α = CONDUCTION ANGLE 105 95 dc 85 α = 30° 75 0 1 90° 120° 180° 60° 2 3 4 5 6 7 8 15 12 α α = Conduction Angle 9.0 dc 120° 60° 6.0 180° 90° α = 30° 3.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 IT(AV), AVG. ON-STATE CURRENT (AMPS) 2 FIGURE 3 — NORMALIZED GATE TRIGGER CURRENT FIGURE 2 — ON-STATE POWER DISSIPATION 7.0 8.0 IGT , NORMALIZED GATE TRIGGER CURRENT (mA) P(AV) , AVERAGE ON-STATE POWER DISSIPATION (WATTS) IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) 3.0 2.0 VD = 12 Vdc 1.5 1.0 0.9 0.7 0.5 0.4 0.3 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Motorola Thyristor Device Data 1.2 VD = 12 Vdc 1.0 0.9 0.7 0.5 0.4 0.3 –60 –40 –20 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (°C) Motorola Thyristor Device Data 100 FIGURE 5 — NORMALIZED HOLDING CURRENT IH , NORMALIZED HOLDING CURRENT (mA) VGT, NORMALIZED GATE TRIGGER VOLTAGE FIGURE 4 — NORMALIZED GATE TRIGGER VOLTAGE 1.3 120 140 4.0 3.0 2.0 VD = 12 Vdc 1.5 1.0 0.9 0.7 0.5 0.4 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) 3 PACKAGE DIMENSIONS –T– B F T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. C S 4 Q A STYLE 3: PIN 1. 2. 3. 4. U 1 2 3 H CATHODE ANODE GATE ANODE K Z R L V J G D N DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.055 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.39 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 CASE 221A-04 (TO–220AB) Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *MCR218/D* MCR218/D