Order this document by MAC97/D SEMICONDUCTOR TECHNICAL DATA . . . designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO–92 package which is readily adaptable for use in automatic insertion equipment. • One–Piece, Injection–Molded Unibloc Package • Sensitive Gate Triggering in Four Trigger Modes for all possible Combinations of Trigger Sources, and Especially for Circuits that Source Gate Drives • All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability (Device Date Code 9625 and Up) Motorola preferred devices TRIACs 0.8 AMPERE RMS 200 — 600 VOLTS MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off-State Voltage (Gate Open, TJ = –40 to +110°C)(1) 1/2 Sine Wave 50 to 60 Hz, Gate Open MAC97–4, MAC97A4 MAC97–6, MAC97A6 MAC97–8, MAC97A8 On-State RMS Current Full Cycle Sine Wave 50 to 60 Hz (TC = +50°C) Peak Non–repetitive Surge Current (One Full Cycle, 60 Hz, TA = 110°C) Circuit Fusing Considerations TJ = –40 to +110°C (t = 8.3 ms) v 2.0 ms) Peak Gate Power (t v 2.0 ms) Peak Gate Voltage (t Average Gate Power (TC = 80°C, t Peak Gate Current (t v 2.0 ms) v 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Value VDRM Unit Volts MT1 200 400 600 MT2 G IT(RMS) 0.8 Amp ITSM 8.0 Amps I2t 0.26 A2s VGM 5.0 Volts PGM 5.0 Watts PG(AV) 0.1 Watt IGM 1.0 Amp TJ –40 to +110 °C Tstg –40 to +150 °C Symbol Max Unit MT1 G MT2 CASE 29–04 TO–226AA, STYLE 12 (TO–92) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case RθJC 75 °C/W Thermal Resistance, Junction to Ambient RθJA 200 °C/W (1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola Thyristor Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TC = 25°C, and Either Polarity of MT2 to MT1 Voltage unless otherwise noted) Characteristic Peak Blocking Current(1) (VD = Rated VDRM, TJ = 110°C, Gate Open) Peak On-State Voltage (Either Direction) (ITM = 1.1 A Peak; Pulse Width 2.0 ms, Duty Cycle v v 2.0%) Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) MAC97 MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) Symbol Min Typ Max Unit IRRM — — 0.1 mA VTM — — 1.65 Volts IGT MAC97A Gate Trigger Voltage, (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) All Types MT2(+), G(–) All Types MT2(–), G(–) All Types MT2(–), G(+) All Types (VD = Rated VDRM, RL = 10 k Ohms, TJ = 110°C) MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) All Types MT2(–), G(+) All Types mA — — — — — — — — 10 10 10 10 — — — — — — — — 5.0 5.0 5.0 7.0 VGT Volts — — — — — — — — 2.0 2.0 2.0 2.5 0.1 0.1 — — — — Holding Current (VD = 12 Vdc, ITM = 200 mA, Gate Open) IH — — 5.0 Gate Controlled Turn–On Time (VD = Rated VDRM, ITM = 1.0 A pk, IG = 25 mA) tgt — 2.0 — Critical Rate–of–Rise of Commutation Voltage (f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS, On–State Current Duration = 2.0 mS, VDRM = 200 V, Gate Unenergized, TC = 110°C, Gate Source Resistance = 150 W, See Figure 13) dv/dtc 1.5 — — V/ms Critical Rate–of–Rise of Off State Voltage (Vpk = Rated VDRM, TC = 110°C, Gate Open, Exponential Method) dv/dt 10 — — V/ms 2 mA m s Motorola Thyristor Device Data 110 110 I T(RMS) , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (° C) T = 30° 100 60° 90 DC 90° 80 180° 70 120° 60 α 50 α 40 α = CONDUCTION ANGLE 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 120° 60 α 50 α 40 α = CONDUCTION ANGLE 0 0.05 0.1 0.15 0.2 0.25 0.3 Figure 2. RMS Current Derating α α = CONDUCTION ANGLE 0.6 0.4 0.2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.35 0.4 10 TYPICAL @ TJ = 25°C MAXIMUM @ TJ = 110°C 1.0 MAXIMUM @ TJ = 25°C 0.1 MAXIMUM @ TJ = 110°C 0.01 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 IT(RMS), RMS ON–STATE CURRENT (AMPS) VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) Figure 3. Power Dissipation Figure 4. On–State Characteristics 5.0 10 1.0 Q Q Z JC(t) = R JC(t) @ r(t) 0.1 0.01 180° 70 Figure 1. RMS Current Derating α 0 80 IT(RMS), RMS ON–STATE CURRENT (AMPS) 1.0 0 90° DC IT(RMS), RMS ON–STATE CURRENT (AMPS) 1.2 0.8 60° 90 20 IT, INSTANTANEOUS ON–STATE CURRENT (AMPS) 30 T = 30° 100 30 I TSM , PEAK SURGE CURRENT (AMPS) R(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) P(AV), MAXIMUM AVERAGE POWER DISSIPATION (WATTS) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) 0.1 1.0 10 100 1S103 1S104 5.0 3.0 2.0 TJ = 110°C f = 60 Hz CYCLE Surge is preceded and followed by rated current. 1.0 1.0 2.0 3.0 5.0 10 30 50 t, TIME (ms) NUMBER OF CYCLES Figure 5. Transient Thermal Response Figure 6. Maximum Allowable Surge Current Motorola Thyristor Device Data 100 3 6.0 10 I GT, GATE TRIGGER CURRENT (mA) I H, HOLDING CURRENT (mA) Q3 5.0 MAIN TERMINAL #2 POSITIVE 4.0 3.0 MAIN TERMINAL #2 NEGATIVE 2.0 1.0 0 –40 –20 0 20 40 60 80 Q2 1.0 0.1 –40 100 110 –20 0 20 40 60 80 100 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Holding Current Variation Figure 8. Typical Gate Trigger Current Variation 1.1 60 600 Vpk TJ = 110°C 0.9 50 Q3 STATIC dv/dt (V/mS) VGT, GATE TRIGGER VOLTAGE (VOLTS) Q4 Q1 Q4 Q2 Q1 0.7 MAIN TERMINAL #2 NEGATIVE 40 0.5 0.3 MAIN TERMINAL #2 POSITIVE 30 –40 –20 20 0 40 60 80 20 100 10 100 1000 10,000 TJ, JUNCTION TEMPERATURE (°C) RGK, GATE – MT1 RESISTANCE (OHMS) Figure 9. Gate Trigger Voltage Variation Figure 10. Exponential Static dv/dt versus Gate ć MT1 Resistance 10 10 60 Hz 180 Hz 80°C ITM 100°C 110°C tw f + 2t1 w VDRM 300 Hz 400 Hz ń + 6f1000I (di dt) c VDRM = 200 V TM 1.0 1.0 4 COMMUTATING dv/dt dv/dtc , (V/mS) COMMUTATING dv/dt dv/dtc , (V/mS) 60°C 10 1.0 60 70 80 90 100 di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS) TJ, JUNCTION TEMPERATURE (°C) Figure 11. Typical Commutating dv/dt versus Current Crossing Rate and Junction Temperature Figure 12. Typical Commutating dv/dt versus Junction Temperature at 0.8 Amps RMS 110 Motorola Thyristor Device Data 80 mHY LL TRIGGER CHARGE CHARGE CONTROL 5 mF NON–POLAR CL TRIGGER CONTROL 75 VRMS ADJUST FOR ITM, 60 Hz VAC 1N4007 MEASURE I RS 2 CS 56 – 1N914 51 0.047 CS ADJUST FOR dv/dt(c) 200 V + 1 G NOTE: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information. Figure 13. Simplified Q1 (dv/dt)c Test Circuit Motorola Thyristor Device Data 5 PACKAGE DIMENSIONS A B STYLE 12: PIN 1. MAIN TERMINAL 1 2. GATE 3. MAIN TERMINAL 2 R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D X X G J H V C SECTION X–X 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– CASE 29–04 (TO–226AA) (TO–92) Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 MFAX: [email protected] – TOUCHTONE 602–244–6609 INTERNET: http://Design–NET.com ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Thyristor Device Data *MAC97/D* MAC97/D