MOTOROLA Order this document by MAC224/D SEMICONDUCTOR TECHNICAL DATA MAC224 Series MAC224A Series Triacs Silicon Bidirectional 40 Amperes RMS Triode Thyristors . . . designed primarily for full-wave ac control applications such as lighting systems, heater controls, motor controls and power supplies. TRIACs 40 AMPERES RMS 200 thru 800 VOLTS • Blocking Voltage to 800 Volts • All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability • Gate Triggering Guaranteed in Three Modes (MAC224 Series) or Four Modes (MAC224A Series) MT2 G MT1 CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Off-State Voltage(1) (TJ = –40 to 125°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) Symbol Value VDRM MAC224-4, MAC224A4 MAC224-6, MAC224A6 MAC224-8, MAC224A8 MAC224-10, MAC224A10 Unit Volts 200 400 600 800 On-State RMS Current (TC = 75°C)(2) (Full Cycle Sine Wave 50 to 60 Hz) IT(RMS) 40 Amps Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) ITSM 350 Amps I2t 500 A2s IGM ±2 Amps VGM ±10 Volts PGM 20 Watts PG(AV) 0.5 Watts Circuit Fusing (t = 8.3 ms) p 2 µs) Peak Gate Voltage (t p 2 µs) Peak Gate Power (t p 2 µs) Peak Gate Current (t Average Gate Power (TC = 75°C, t p 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Mounting Torque TJ –40 to 125 °C Tstg –40 to 150 °C — 8 in. lb. 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source (cont.) such that the voltage ratings of the devices are exceeded. 2. This device is rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device is to be used at high sustained currents. (See Figure 1 for maximum case temperatures.) Motorola Thyristor Device Data Motorola, Inc. 1995 1 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 1 °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.) Characteristic Peak Blocking Current (Rated VDRM, Gate Open) Symbol Min Typ Max Unit — — — — 10 2 µA mA — 1.4 1.85 Volts IDRM TJ = 25°C TJ = 125°C Peak On-State Voltage (ITM = 56 A Peak, Pulse Width VTM p 2 ms, Duty Cycle p 2%) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(+), G(–); MT2(+), G(–) MT2(–), G(+) “A” SUFFIX ONLY IGT Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(–), G(–); MT(+), G(–) MT2(–), G(+) “A” SUFFIX ONLY VGT Gate Non-Trigger Voltage (VD = Rated VDRM, TJ = 125°C, RL = 10 k) MT2(+), G(+); MT2(–), G(–); MT(+), G(–) MT2(–), G(+) VGD mA — — 25 40 50 75 Volts — — 1.1 1.3 2 2.5 Volts 0.2 0.2 — — — — Holding Current (VD = 12 Vdc, Gate Open) IH — 30 75 mA Gate Controlled Turn-On Time (VD = Rated VDRM, ITM = 56 A Peak, IG = 200 mA) tgt — 1.5 — µs dv/dt — 50 — V/µs dv/dt(c) — 5 — V/µs Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, TC = 125°C) FIGURE 2 – ON-STATE POWER DISSIPATION FIGURE 1 – RMS CURRENT DERATING 125 PD , AVERAGE POWER DISSIPATION (WATTS) T C, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 56 A Peak, Commutating di/dt = 20.2 A/ms, Gate Unenergized, TC = 75°C) 120 115 110 105 100 95 90 85 80 75 0 5.0 10 15 20 25 30 IT(RMS), RMS ON-STATE CURRENT (AMPS)* 35 40 60 54 48 42 36 30 24 18 12 6.0 0 0 5.0 10 15 20 25 30 35 40 IT(RMS), RMS ON-STATE CURRENT (AMPS)* *This device is rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device is to be used at high sustained currents. 2 Motorola Thyristor Device Data FIGURE 4 – GATE TRIGGER VOLTAGE 3.0 2.0 NORMALIZED GATE VOLTAGE NORMALIZED GATE CURRENT FIGURE 3 – GATE TRIGGER CURRENT VD = 12 V RL = 100 Ω 1.0 0.5 0.3 0.2 0.1 –60 –40 –20 0 20 40 60 80 100 120 3.0 2.0 VD = 12 V RL = 100 Ω 1.0 0.5 0.3 0.2 0.1 –60 140 –40 –20 TJ, JUNCTION TEMPERATURE (°C) 0.5 0.3 0.2 0.1 –60 –40 –20 0 20 40 60 80 100 120 140 I TM, INSTANTANEOUS ON-STATE CURRENT (AMPS) NORMALIZED HOLD CURRENT ITM = 200 mA Gate Open 1.0 20 40 60 80 100 120 1000 100 TJ = 25°C 10 1.0 0 1.0 2.0 3.0 VTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) FIGURE 7 – THERMAL RESPONSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.5 0.2 ZθJC(t) = r(t) • RθJC 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1 2 5 20 50 100 200 500 1k 2k 5k 10 k t, TIME (ms) Motorola Thyristor Device Data 140 FIGURE 6 – TYPICAL ON-STATE CHARACTERISTICS FIGURE 5 – HOLDING CURRENT 2.0 0 TJ, JUNCTION TEMPERATURE (°C) 3 PACKAGE DIMENSIONS –T– B F T SEATING PLANE C S 4 Q STYLE 4: PIN 1. 2. 3. 4. A U 1 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. H K Z R L V J G D MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.055 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.39 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 N CASE 221A-04 (TO–220AB) Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *MAC224/D* MAC224/D