MOTOROLA Order this document by MAC320FP/D SEMICONDUCTOR TECHNICAL DATA MAC320FP Series MAC320AFP Series Triacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. ISOLATED TRIACs THYRISTORS 20 AMPERES RMS 200 thru 800 VOLTS • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Three Modes (MAC320FP Series) or Four Modes (MAC320AFP Series) MT2 MT1 CASE 221C-02 STYLE 3 G MAXIMUM RATINGS (TC = 25°C unless otherwise noted.) Rating Symbol Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC320-4FP, MAC320A4FP MAC320-6FP, MAC320A6FP MAC320-8FP, MAC320A8FP MAC320-10FP, MAC320A10FP Peak Gate Voltage On-State RMS Current (TC = +75°C, Full Cycle Sine Wave 50 to 60 Hz)(2) Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, T C = +75°C, preceded and followed by rated current) Peak Gate Power (T C = +75°C, Pulse Width = 2 µs) Value VDRM Unit Volts 200 400 600 800 VGM 10 Volts IT(RMS) 20 Amps ITSM 150 Amps PGM 20 Watts PG(AV) 0.5 Watt IGM 2 Amps V(ISO) 1500 Volts TJ –40 to +125 °C Tstg –40 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.8 °C/W Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W Average Gate Power (T C = +75°C, t = 8.3 ms) Peak Gate Current RMS Isolation Voltage (TA = 25°C, Relative Humidity Operating Junction Temperature Storage Temperature Range p 20%) THERMAL CHARACTERISTICS Characteristic 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Motorola Thyristor Device Data Motorola, Inc. 1995 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Peak Blocking Current (VD = Rated VDRM, Gate Open) Symbol Min Typ Max Unit — — — — 10 2 µA mA — 1.4 1.7 Volts IDRM TJ = 25°C TJ = +125°C Peak On-State Voltage (Either Direction) (ITM = 28 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle VTM p 2%) Peak Gate Trigger Current (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms Minimum Gate Pulse Width = 2 µs) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY IGT mA Peak Gate Trigger Voltage (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms Minimum Gate Pulse Width = 2 µs) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY (Main Terminal Voltage = Rated VDRM, RL = 10 , TJ = +110°C) MT2(+), G(+); MT2(+), G(–) MT2(–), G(–); MT2(–), G(+) “A” SUFFIX ONLY VGT — — — — — — — — 50 50 50 75 Volts — — — — 0.9 0.9 1.1 1.4 2 2 2 2.5 0.2 0.2 — — — — Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 200 mA) IH — 6 40 mA Turn-On Time (VD = Rated VDRM, ITM = 28 A, IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) t gt — 1.5 10 µs dv/dt(c) — 5 — V/µs Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 28 A, Commutating di/dt = 10 A/ms, Gate Unenergized, TC = +75°C) 130 40 120 α = 30° 60° 90° 110 100 90 80 α 70 α dc α = Conduction Angle 60 50 180° 0 2.0 4.0 6.0 8.0 10 12 14 16 IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 1. RMS Current Derating 2 PD(AV) , AVERAGE POWER (WATT) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C) TYPICAL CHARACTERISTICS 18 20 α 35 α 30 90° α = Conduction Angle 25 180° dc 20 15 60° α = 30° 10 5.0 0 0 2.0 4.0 6.0 8.0 10 12 14 16 IT(RMS), RMS ON-STATE CURRENT (AMP) 18 20 Figure 2. On-State Power Dissipation Motorola Thyristor Device Data 3 100 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 2 70 50 125°C 20 0.7 0.5 0.3 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 3. Typical Gate Trigger Voltage I GTM , GATE TRIGGER CURRENT (NORMALIZED) TJ = 25°C 30 1 3 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 2 i TM , INSTANTANEOUS FORWARD CURRENT (AMP) VGTM , GATE TRIGGER VOLTAGE (NORMALIZED) 10 7 5 3 2 1 0.7 0.5 1 0.7 0.3 0.5 0.2 0.3 –60 0.1 –40 –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) Figure 4. Typical Gate Trigger Current Motorola Thyristor Device Data 120 140 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4 vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 5. Maximum On-State Characteristics 3 300 GATE OPEN APPLIES TO EITHER DIRECTION TSM , PEAK SURGE CURRENT (AMP) I H , HOLDING CURRENT (NORMALIZED) 3 2 1 0.7 0.5 0.3 –60 200 100 70 50 TC = 80°C f = 60 Hz SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 30 –40 –20 0 20 40 60 80 100 120 1 140 2 3 5 7 10 TJ, JUNCTION TEMPERATURE (°C) NUMBER OF CYCLES Figure 6. Typical Holding Current Figure 7. Maximum Nonrepetitive Surge Current r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.5 0.2 ZθJC(t) = r(t) • RθJC 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1k 2k 5k 10 k t, TIME (ms) Figure 8. Thermal Response 4 Motorola Thyristor Device Data PACKAGE DIMENSIONS –T– –B– F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. SEATING PLANE C S P N E A Q H STYLE 3: PIN 1. MT 1 2. MT 2 3. GATE 1 2 3 –Y– K Z J L G R D 3 PL 0.25 (0.010) M B M DIM A B C D E F G H J K L N P Q R S Z INCHES MIN MAX 0.680 0.700 0.388 0.408 0.175 0.195 0.025 0.040 0.340 0.355 0.140 0.150 0.100 BSC 0.110 0.155 0.018 0.028 0.500 0.550 0.045 0.070 0.049 ––– 0.270 0.290 0.480 0.500 0.090 0.120 0.105 0.115 0.070 0.090 MILLIMETERS MIN MAX 17.28 17.78 9.86 10.36 4.45 4.95 0.64 1.01 8.64 9.01 3.56 3.81 2.54 BSC 2.80 3.93 0.46 0.71 12.70 13.97 1.15 1.77 1.25 ––– 6.86 7.36 12.20 12.70 2.29 3.04 2.67 2.92 1.78 2.28 Y CASE 221C-02 Motorola Thyristor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 ◊ Motorola Thyristor Device Data *MAC320FP/D* MAC320FP/D