MOTOROLA Order this document by MAC212FP/D SEMICONDUCTOR TECHNICAL DATA MAC212FP Series MAC212AFP Series Triacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. ISOLATED TRIACs THYRISTORS 12 AMPERES RMS 200 thru 800 VOLTS • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Three Modes (MAC212FP Series) or Four Modes (MAC212AFP Series) MT2 MT1 CASE 221C-02 STYLE 3 G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC212-4FP, MAC212A4FP MAC212-6FP, MAC212A6FP MAC212-8FP, MAC212A8FP MAC212-10FP, MAC212A10FP VDRM On-State RMS Current (TC = +85°C) Full Cycle Sine Wave 50 to 60 Hz(2) Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +85°C) preceded and followed by rated current Circuit Fusing (t = 8.3 ms) Peak Gate Power (TC = +85°C, Pulse Width = 10 µs) Average Gate Power (TC = +85°C, t = 8.3 ms) Peak Gate Current (TC = +85°C, Pulse Width = 10 µs) RMS Isolation Voltage (TA = 25°C, Relative Humidity Operating Junction Temperature Storage Temperature Range p 20%) Value Unit Volts 200 400 600 800 IT(RMS) 12 Amps ITSM 100 Amps I2t 40 A2s PGM 20 Watts PG(AV) 0.35 Watt IGM 2 Amps V(ISO) 1500 Volts TJ –40 to +125 °C Tstg –40 to +150 °C THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 2.1 °C/W Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Motorola Thyristor Device Data Motorola, Inc. 1995 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Peak Blocking Current (Either Direction) (VD = Rated VDRM, Gate Open) TJ = 25°C TJ = +125°C Peak On-State Voltage (Either Direction) (ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle VTM p 2%) Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, Minimum Gate Pulse Width = 2 µs) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY IGT Typ Max Unit — — — — 10 2 µA mA — 1.3 1.75 Volts Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, Minimum Gate Pulse Width = 2 µs) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY (Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C) MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) MT2(–), G(+) “A ” SUFFIX ONLY VGT mA — — — — 12 12 20 35 50 50 50 75 Volts — — — — 0.9 0.9 1.1 1.4 2 2 2 2.5 0.2 0.2 — — — — Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 500 mA) IH — 6 50 mA Turn-On Time (VD = Rated VDRM, ITM = 17 A, IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) tgt — 1.5 — µs dv/dt(c) — 5 — V/µs dv/dt — 100 — V/µs Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms, Gate Unenergized, TC = +85°C) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +85°C) TYPICAL CHARACTERISTICS P D(AV), AVERAGE POWER DISSIPATION (WATT) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C) Min IDRM 125 115 α = 30° 105 60° 90° α 95 α 85 180° dc α = CONDUCTION ANGLE 75 0 2.0 4.0 6.0 8.0 10 IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 1. Current Derating 2 12 14 28 24 α α 20 dc α = 180° 90° 60° 30° α = CONDUCTION ANGLE 16 12 8.0 4.0 0 0 2.0 4.0 6.0 8.0 10 12 14 IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 2. Power Dissipation Motorola Thyristor Device Data 100 I TSM , PEAK SURGE CURRENT (AMP) i T, INSTANTANEOUS ON-STATE CURRENT (AMPS) 100 50 20 10 5 TJ = 25°C TJ = 125°C 2 80 60 CYCLE 40 TC = 70°C f = 60 Hz 20 SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 0 1 1 2 0.5 3 5 7 10 NUMBER OF CYCLES Figure 4. Maximum Nonrepetitive Surge Current 0.1 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 VGT , GATE TRIGGER VOLTAGE (NORMALIZED) 0.2 4.4 vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 3. Maximum On-State Characteristics 2 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 1.6 1.2 0.8 0.4 0 –60 –40 –20 0 20 40 60 80 TC, CASE TEMPERATURE (°C) 2.8 2 IH , HOLDING CURRENT (NORMALIZED) I GT, GATE TRIGGER CURRENT (NORMALIZED) Figure 5. Typical Gate Trigger Voltage OFF-STATE VOLTAGE = 12 Vdc ALL MODES 1.6 1.2 0.8 0.4 0 –60 –40 –20 0 20 40 60 80 2.4 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 2 1.6 1.2 0.8 0.4 0 –60 –40 –20 0 20 40 TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C) Figure 6. Typical Gate Trigger Current Figure 7. Typical Holding Current Motorola Thyristor Device Data 60 80 3 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.5 0.2 ZθJC(t) = r(t) • RθJC 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1 2 5 20 50 t, TIME (ms) 100 200 500 1k 2k 5k 10 k Figure 8. Thermal Response 4 Motorola Thyristor Device Data PACKAGE DIMENSIONS –T– –B– F C S P N E STYLE 3: PIN 1. MT 1 2. MT 2 3. GATE A Q H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. SEATING PLANE 1 2 3 –Y– K Z J L G R D 3 PL 0.25 (0.010) M B M Y DIM A B C D E F G H J K L N P Q R S Z INCHES MIN MAX 0.680 0.700 0.388 0.408 0.175 0.195 0.025 0.040 0.340 0.355 0.140 0.150 0.100 BSC 0.110 0.155 0.018 0.028 0.500 0.550 0.045 0.070 0.049 ––– 0.270 0.290 0.480 0.500 0.090 0.120 0.105 0.115 0.070 0.090 MILLIMETERS MIN MAX 17.28 17.78 9.86 10.36 4.45 4.95 0.64 1.01 8.64 9.01 3.56 3.81 2.54 BSC 2.80 3.93 0.46 0.71 12.70 13.97 1.15 1.77 1.25 ––– 6.86 7.36 12.20 12.70 2.29 3.04 2.67 2.92 1.78 2.28 CASE 221C-02 Motorola Thyristor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 ◊ Motorola Thyristor Device Data *MAC212FP/D* MAC212FP/D