Order this document by MGV12N120D/D SEMICONDUCTOR TECHNICAL DATA N–Channel Enhancement Mode Silicon Gate IGBT & DIODE IN D3PAK 12 A @ 90°C 20 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBTs are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operations at high frequencies. Co–packaged IGBTs save space, reduce assembly time and cost. • • • • • High Power Surface Mount D3PAK Package High Speed Eoff: 160 mJ/A typical at 125°C High Short Circuit Capability – 10 ms minimum Soft Recovery Free Wheeling Diode is included in the package Robust High Voltage Termination C G C E CASE 433–01, Style 1 TO–268AA G E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector–Emitter Voltage VCES 1200 Vdc Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 1200 Vdc Gate–Emitter Voltage — Continuous VGE ±20 Vdc Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) IC25 IC90 ICM 20 12 40 Adc PD 123 0.98 Watts W/°C TJ, Tstg – 55 to 150 °C tsc 10 ms RθJC RθJC RθJA 1.02 1.41 45 °C/W TL 260 °C Rating Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω) Thermal Resistance — Junction to Case – IGBT — Junction to Case – Diode — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Apk (1) Pulse width is limited by maximum junction temperature. This document contains information on a new product. Specifications and information are subject to change without notice. IGBT Motorola Motorola, Inc. 1995 Device Data 1 MGV12N120D ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 1200 — — 870 — — — — — — 100 2500 — — 250 — — — 2.51 2.36 3.21 3.37 — 4.42 4.0 — 6.0 10 8.0 — mV/°C gfe — 12 — Mhos Cies — 930 — pF Coes — 126 — Cres — 16 — td(on) — 80 — OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 µAdc) Temperature Coefficient (Positive) BVCES Zero Gate Voltage Collector Current (VCE = 1200 Vdc, VGE = 0 Vdc) (VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125°C) ICES Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES Vdc mV/°C µAdc nAdc ON CHARACTERISTICS (1) Collector–to–Emitter On–State Voltage (VGE = 15 Vdc, IC = 5 Adc) (VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C) (VGE = 15 Vdc, IC = 10 Adc) VCE(on) Gate Threshold Voltage (VCE = VGE, IC = 1 mAdc) Threshold Temperature Coefficient (Negative) VGE(th) Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc) Vdc Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VCE = 25 Vdc, Vdc VGE = 0 Vdc, Vdc f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn–On Delay Time Rise Time (VCC = 720 Vdc Vdc, IC = 10 Adc Adc, VGE = 15 Vdc,, L = 300 mH RG = 20 Ω, TJ = 25°C) Energy losses include “tail” tr — 114 — td(off) — 66 — tf — 232 — Turn–Off Switching Loss Eoff — 0.57 1.33 Turn–On Switching Loss Eon — 1.12 1.88 Total Switching Loss Ets — 1.69 3.21 td(on) — 74 — tr — 110 — td(off) — 80 — tf — 616 — Turn–Off Switching Loss Eoff — 1.60 — Turn–On Switching Loss Eon — 2.30 — Total Switching Loss Ets — 3.90 — QT — 31 — Q1 — 13 — Q2 — 14 — Turn–Off Delay Time Fall Time Turn–On Delay Time Rise Time Turn–Off Delay Time (VCC = 720 Vdc Vdc, IC = 10 Adc Adc, VGE = 15 Vdc,, L = 300 mH RG = 20 Ω, TJ = 125°C) Energy losses include “tail” Fall Time Gate Charge Vdc IC = 10 Adc (VCC = 720 Vdc, Adc, VGE = 15 Vdc) 2 ns mJ ns mJ nC Motorola IGBT Device Data MGV12N120D ELECTRICAL CHARACTERISTICS — continued (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit — — — 2.75 2.50 3.50 3.22 — 4.18 trr — 54 — ta — 30 — tb — 24 — QRR — 61 — µC trr — 150 — ns ta — 102 — tb — 48 — QRR — 653 — DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 5 Adc) (IEC = 5 Adc, TJ = 125°C) (IEC = 10 Adc) VFEC Reverse Recovery Time ((IF = 10 Adc, Ad , VR = 720 Vd Vdc,, dIF/dt = 200 A/µs) Reverse Recovery Stored Charge Reverse Recovery Time ((IF = 10 Adc, Ad , VR = 720 Vd Vdc,, dIF/dt = 200 A/µs, TJ = 125°C) Reverse Recovery Stored Charge Vdc ns µC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. Motorola IGBT Device Data 3 MGV12N120D PACKAGE DIMENSIONS SEATING PLANE –T– B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C S W R E Q 4 Y V A N 1 P 2 F U L K 3 2 PL X J D 2 PL 0.13 (0.005) G H M T CASE 433–01 ISSUE B DIM A B C D E F G H J K L N P Q R S U V W X Y INCHES MIN MAX 0.588 0.592 0.623 0.627 0.196 0.200 0.048 0.052 0.058 0.062 0.078 0.082 0.430 BSC 0.105 0.110 0.018 0.022 0.150 0.160 0.058 0.062 0.353 0.357 0.078 0.082 0.053 0.057 0.623 0.627 0.313 0.317 0.028 0.032 0.050 ––– 0.054 0.058 0.050 0.060 0.104 0.108 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.94 15.04 15.82 15.93 4.98 5.08 1.22 1.32 1.47 1.57 1.98 2.08 1.092 BSC 2.67 2.79 0.46 0.56 3.81 4.06 1.47 1.57 8.97 9.07 1.98 2.08 1.35 1.45 15.82 15.93 7.95 8.05 0.71 0.81 1.27 ––– 1.37 1.47 1.27 1.52 2.64 2.74 BASE COLLECTOR EMITTER COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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