Order this document by MGP15N60U/D SEMICONDUCTOR TECHNICAL DATA N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides fast switching characteristics and results in efficient operation at high frequencies. • • • • • IGBT IN TO–220 15 A @ 90°C 26 A @ 25°C 600 VOLTS VERY LOW ON–VOLTAGE Industry Standard TO–220 Package High Speed Eoff: 67 J/A typical at 125°C Low On–Voltage – 1.7 V typical at 8.0 A, 125°C Robust High Voltage Termination ESD Protection Gate–Emitter Zener Diodes C G G C E CASE 221A–09, Style 9 TO–220AB E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES 600 Vdc Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 600 Vdc Gate–Emitter Voltage — Continuous VGE ± 20 Vdc Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) IC25 IC90 ICM 26 15 30 Adc PD 96 0.77 Watts W/°C TJ, Tstg – 55 to 150 °C RθJC RθJA 1.3 65 °C/W TL 200 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance — Junction to Case – IGBT — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw Apk 10 lbfSin (1.13 NSm) (1) Pulse width is limited by maximum junction temperature. Repetitive rating. This document contains information on a new product. Specifications and information herein are subject to change without notice. IGBT Motorola Motorola, Inc. 1997 Device Data 1 MGP15N60U ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 600 — — 870 — — mV/°C 15 — — Vdc — — — — 10 200 — — 50 — — — 1.4 1.3 1.7 1.7 — 2.0 3.0 — 5.5 10 7.0 — mV/°C gfe — 7.0 — Mhos pF OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 25 µAdc) Temperature Coefficient (Positive) V(BR)CES Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) V(BR)ECS Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C) ICES Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES Vdc µAdc µAdc ON CHARACTERISTICS (1) Collector–to–Emitter On–State Voltage (VGE = 15 Vdc, IC = 4.0 Adc) (VGE = 15 Vdc, IC = 4.0 Adc, TJ = 125°C) (VGE = 15 Vdc, IC = 8.0 Adc) VCE(on) Gate Threshold Voltage (VCE = VGE, IC = 1.0 mAdc) Threshold Temperature Coefficient (Negative) VGE(th) Forward Transconductance (VCE = 10 Vdc, IC = 8.0 Adc) Vdc Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VCE = 25 Vdc, Vdc VGE = 0 Vdc, Vdc f = 1.0 MHz) Transfer Capacitance Cies — 806 — Coes — 78 — Cres — 13 — td(on) — 35 — tr — 34 — td(off) — 105 — tf — 200 — Eoff — 250 — mJ td(on) — 36 — ns tr — 39 — td(off) — 206 — tf — 255 — Eoff — 510 — mJ QT — 39.2 — nC Q1 — 8.7 — Q2 — 17.4 — — 7.5 — SWITCHING CHARACTERISTICS (1) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time (VCC = 360 Vdc, Vd IC = 8 8.0 0 Ad Adc, VGE = 15 Vdc, Vd L = 300 mH H, RG = 20 Ω, TJ = 25 25°C) C) Energy losses include “tail” Turn–Off Switching Loss Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time (VCC = 360 Vdc, Vd IC = 8 8.0 0 Ad Adc, Vd L = 300 mH VGE = 15 Vdc, H, RG = 20 Ω, TJ = 125°C) 125 C) Energy losses include “tail” Turn–Off Switching Loss Gate Charge (VCC = 360 Vdc, Vdc IC = 8 8.0 0 Adc Adc, VGE = 15 Vdc) ns INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25″ from package to emitter bond pad) LE nH (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2 Motorola IGBT Device Data MGP15N60U 40 40 15 V 30 12.5 V 20 V 25 VGE = 10 V 20 15 10 5 0 1 2 3 4 5 6 7 30 12.5 V 20 V 25 VGE = 10 V 20 15 10 5 8 4 5 7 6 Figure 1. Output Characteristics Figure 2. Output Characteristics 30 20 TJ = 125°C 25°C 10 0 7 8 9 10 11 12 13 14 15 16 1.7 6.0 A 1.6 4.0 A 1.5 VGE = 15 V 80 mS PULSE WIDTH 1.4 –50 –25 0 25 50 75 100 125 Figure 3. Transfer Characteristics Figure 4. Collector–To–Emitter Saturation Voltage versus Junction Temperature 1200 Cies 800 IC = 8.0 A TJ, JUNCTION TEMPERATURE (°C) TJ = 25°C VGE = 0 V Coes Cres 0 5 10 15 20 25 150 20 16 QT 12 Q1 Q2 8 TJ = 25°C VCC = 300 V IC = 8.0 A 4 0 0 10 20 30 40 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) QG, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Variation Figure 6. Gate–To–Emitter Voltage versus Total Charge Motorola IGBT Device Data 8 1.8 VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) 6 1600 0 3 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) VCE = 100 V 5.0 mS PULSE WIDTH 400 2 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) 40 5 1 0 VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS) TJ = 125°C 35 0 0 C, CAPACITANCE (pF) 15 V 17.5 V TJ = 25°C 35 IC , COLLECTOR CURRENT (AMPS) IC , COLLECTOR CURRENT (AMPS) 17.5 V 50 3 MGP15N60U 0.8 VCC = 360 V VGE = 15 V RG = 20 W 0.7 Eoff , TURN–OFF ENERGY LOSSES (mJ) Eoff , TURN–OFF ENERGY LOSSES (mJ) 0.8 IC = 8.0 A 0.6 0.5 6.0 A 0.4 4.0 A 0.3 0.2 5 15 20 25 6.0 A 0.5 0.4 4.0 A 0.3 0.2 0.1 –25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Turn–Off Losses versus Gate Resistance Figure 8. Turn–Off Losses versus Junction Temperature 150 100 IC, COLLECTOR CURRENT (AMPS) Eoff , TURN–OFF ENERGY LOSSES (mJ) IC = 8.0 A RG, GATE RESISTANCE (OHMS) 1.0 TJ = 125°C VCC = 360 V VGE = 15 V RG = 20 W 0.8 0.6 0.4 0.2 0 10 TJ = 125°C VGE = 15 V RG = 20 W 1 0 4 0.6 0 –50 50 35 VCC = 360 V VGE = 15 V RG = 20 W 0.7 1 2 3 4 5 6 7 8 1 10 100 IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 9. Turn–Off Losses versus Collector Current Figure 10. Reverse Biased Safe Operating Area 1000 Motorola IGBT Device Data MGP15N60U PACKAGE DIMENSIONS –T– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C T S 4 A Q 1 2 3 STYLE 9: PIN 1. 2. 3. 4. U H K Z L R V J G D N GATE COLLECTOR EMITTER COLLECTOR DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 CASE 221A–09 ISSUE Z Motorola IGBT Device Data 5 MGP15N60U Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, 4–32–1 Nishi–Gotanda, Shagawa–ku, Tokyo, Japan. 03–5487–8488 Customer Focus Center: 1–800–521–6274 Mfax: [email protected] – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ 6 ◊ Motorola IGBTMGP15N60U/D Device Data